Records |
Author |
Смирнов, Константин Владимирович |
Title |
Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе |
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Manuscript |
Year |
2000 |
Publication |
М. МПГУ |
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Pages |
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Keywords |
2DEG, AlGaAs/GaAs heterostructures, NbN films |
Abstract |
Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств. |
Address |
Москва, МПГУ |
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Ph.D. thesis |
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1830 |
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Author |
Kawano, Yukio; Ishibashi, Koji |
Title |
An on-chip near-field terahertz probe and detector |
Type |
Journal Article |
Year |
2008 |
Publication |
Nature Photonics |
Abbreviated Journal |
Nature Photon |
Volume |
2 |
Issue |
10 |
Pages |
618-621 |
Keywords |
single molecule, terahertz, THz, near-field, microscopy, imaging, 2DEG, GaAs/AlGaAs, detector, applications |
Abstract |
The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging. |
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1749-4885 |
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570 |
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Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. |
Title |
Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
Type |
Journal Article |
Year |
2010 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
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Volume |
44 |
Issue |
11 |
Pages |
1475-1478 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures mixers |
Abstract |
Методом субмиллиметровой спектроскопии с высоким временным разрешением измерены температурная и концентрационная зависимости полосы преобразования смесителей терагерцового диапазона AlGaAs/GaAs на разогреве двумерных электронов с фононным каналом их охлаждения. Полоса преобразования на уровне 3 дБ (f3 dB) при 4.2 K при изменении концентрации ns варьируется в пределах 150-250 МГц в соответствии со степенным законом f3 dB propto ns-0.5, что соответствует доминирующему механизму рассеяния на пьезоэлектрических фононах. Минимальное значение коэффициента потерь преобразования полупроводникового смесителя достигается в структурах с высокой подвижностью носителей mu>3·105 см2/В·с при 4.2 K. |
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Duplicated as 1216 |
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RPLAB @ gujma @ |
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702 |
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Author |
An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. |
Title |
Infrared phototransistor using capacitively coupled two-dimensional electron gas layers |
Type |
Journal Article |
Year |
2005 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
86 |
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Pages |
172106 - 172106-3 |
Keywords |
2DEG |
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RPLAB @ akorneev @ |
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603 |
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Author |
Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. |
Title |
Energy-loss rates for hot electrons and holes in GaAs quantum wells |
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Journal Article |
Year |
1985 |
Publication |
Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
Volume |
54 |
Issue |
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Pages |
2045-2048 |
Keywords |
2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
Abstract |
We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening. |
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633 |
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