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Author Dauler, Eric; Kerman, Andrew; Robinson, Bryan; Yang, Joel; Voronov, Boris; Goltsman, Gregory; Hamilton, Scott; Berggren, Karl url  doi
openurl 
  Title Photon-number-resolution with sub-30-ps timing using multi-element superconducting nanowire single photon detectors Type Journal Article
  Year 2009 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.  
  Volume 56 Issue 2 Pages 364-373  
  Keywords PNR SSPD; SNSPD; photon-number-resolution; superconducting nanowire single photon detector; timing jitter; system detection efficiency  
  Abstract A photon-number-resolving detector based on a four-element superconducting nanowire single photon detector is demonstrated to have sub-30-ps resolution in measuring the arrival time of individual photons. This detector can be used to characterize the photon statistics of non-pulsed light sources and to mitigate dead-time effects in high-speed photon counting applications. Furthermore, a 25% system detection efficiency at 1550 nm was demonstrated, making the detector useful for both low-flux source characterization and high-speed photon-counting and quantum communication applications. The design, fabrication and testing of this detector are described, and a comparison between the measured and theoretical performance is presented.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 700  
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Author Marsili, F.; Bitauld, D.; Fiore, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Goltsman, G. url  doi
openurl 
  Title Superconducting parallel nanowire detector with photon number resolving functionality Type Journal Article
  Year 2009 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.  
  Volume 56 Issue 2-3 Pages 334-344  
  Keywords PNR; SSPD; SNSPD; thin superconducting films; photon number resolving detector; multiplication noise; telecom wavelength; NbN  
  Abstract We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0950-0340 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 701  
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Author Mitin, Vladimir; Antipov, Andrei; Sergeev, Andrei; Vagidov, Nizami; Eason, David; Strasser, Gottfried openurl 
  Title Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers Type Journal Article
  Year 2011 Publication Nanoscale Research Letters Abbreviated Journal Nanoscale res lett  
  Volume 6 Issue 1 Pages 6  
  Keywords Quantum dots; Infrared detectors; Photoresponse; Doping; Potential barriers; Capture processes  
  Abstract Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 712  
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Author Семенов, А. В.; Девятов, И. А.; Рябчун, С. А.; Масленников, С. Н.; Масленникова, А. С.; Ларионов, П. А.; Воронов, Б. М.; Чулкова, Г. М. openurl 
  Title Поглощение терагерцового электромагнитного излучения в “грязной” сверхпроводниковой пленке при произвольном виде спектральных функций Type Journal Article
  Year 2011 Publication Ж. Радиоэлектрон. Abbreviated Journal  
  Volume 10 Issue Pages 7  
  Keywords terahertz electromagnetic radiation; superconductors; detectors of terahertz range  
  Abstract A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel.

В технике Келдыша рассмотрена задача о поглощении мощности высокочастотного электромагнитного поля в сверхпроводнике, удовлетворяющем условию грязного предела. Получено выражение для члена источника в кинетическом уравнении для функции распределения квазичастиц, справедливое при произвольном виде спектральных функций. Этот результат имеет значение для развития последовательной микроскопической теории сверхпроводниковых детекторов излучения терагерцового диапазона, в частности, перспективных детекторов на кинетической индуктивности смещённой током сверхпроводниковой полоски и джозефсоновской индуктивности туннельного контакта.
 
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  Notes Duplicated as 1117 Approved no  
  Call Number RPLAB @ gujma @ Serial 713  
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Author Rath, P.; Vetter, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Nebel, C.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. url  doi
openurl 
  Title Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps Type Conference Article
  Year 2016 Publication Integrated Optics: Devices, Mat. Technol. XX Abbreviated Journal Integrated Optics: Devices, Mat. Technol. XX  
  Volume 9750 Issue Pages 135-142  
  Keywords SSPD, Superconducting Nanowire Single-Photon Detector, SNSPD, Single Photon Detector, Diamond Photonics, Diamond Integrated Optics, Diamond Waveguides, Integrated Optics, Low Timing Jitter  
  Abstract We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps).  
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  Publisher Spie Place of Publication Editor Broquin, J.-E.; Conti, G.N.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1210  
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