| Records |
| Author |
Koshelets, V. P.; Khudchenko, A. V. |
| Title |
Analysis of spectral characteristics of a superconducting integrated receiver |
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Journal Article |
| Year |
2006 |
Publication |
J. Communications Technol. Electron. |
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51 |
Issue |
5 |
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596-603 |
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1064-2269 |
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526 |
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Koshelets, V. P.; Borisov, V. B.; Dmitriev, P. N.; Ermakov, A. B.; Filippenko, L. V.; Khudchenko, A. V.; Kiselev, O. S.; Lapitskaya, I. L.; Sobolev, A. S.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M. |
| Title |
Integrated submillimeter receiver for TELIS |
Type |
Journal Article |
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2006 |
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Joint International Workshop “Nanosensors and Arrays of Quantum Dots and Josephson Junctions for space applications”, 10th International Workshop “From Andreev Reflection to the Earliest Universe” |
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Bjorkliden, Kiruna, Sweden |
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527 |
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Yagoubov, P.; Hoogeveen, R.; Torgashin, M.; Khudchenko, A.; Koshelets, V.; Suttiwong, N.; Wagner, G.; Birk M. |
| Title |
550-650 GHz spectrometer development for TELIS |
Type |
Conference Article |
| Year |
2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
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338-341 |
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528 |
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Murk, A.; Kämpfer, N.; Wylde, R.; Inatani, J.; Manabe, T.; Seta, M. |
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Characterization of various quasi-optical components for the submillimeter limb-sounder SMILES |
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Conference Article |
| Year |
2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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426-435 |
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limb-sounder |
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530 |
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Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory |
| Title |
Gain bandwidth and noise temperature of NbTiN HEB mixer |
Type |
Conference Article |
| Year |
2003 |
Publication |
Proc. 14th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 14th Int. Symp. Space Terahertz Technol. |
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Pages |
276-285 |
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NbTiN HEB mixer |
| Abstract |
We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz. |
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1500 |
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