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Koch, M. (2007). Terahertz communications: a 2020 vision. In NATO Security through Science Series (Vol. 2007, pp. 325–338).
Abstract: We discuss basic considerations for potential short-range THz communication systems which may replace or supplement present WLAN systems in 10–15 years from now. On the basis of a few fundamental estimations we show that such a system will need a line-of-sight connection between receiver and emitter. To circumvent the blocking of the direct line-of-sight connection indoor THz communication systems will also have to rely on non-line-of-sight paths which involve reflections off the walls. The reflectivity of the walls can be enhanced by dielectric mirrors. This new scheme makes steerable high-gain antennas a necessity. Hence, a wireless THz communication system can not be a simple extension of the existing technology of today's local area networks. Instead it involves completely new concepts and ideas that have not yet been worked upon.
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Nagatsuma, T., Hirata, A., Royter, Y., Shinagawa, M., Furuta, T., Ishibashi, T., et al. (2000). A 120-GHz integrated photonic transmitter. In Proc. International topical meeting on microwave photonics (MWP 2000) (pp. 225–228).
Abstract: A photonics-based 120-GHz transmitter has been developed. A photodiode, a planar antenna and a silicon lens were integrated to form a compact millimeter-wave (MMW) emitter. The MMW signal emitted from the transmitter has been detected with a waveguide-mounted Schottky diode. The received power exceeded 100 μW, which is the highest value ever reported for photonic MMW transmitter at frequencies of >100 GHz
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Ito, H. (2002). High frequency photodiode work in Japan.
Abstract: The recent progress in the device performance of the uni-traveling-carrier photodiode (UTC-PD) is described. The UTC-PD utilizes only electrons as the active carriers, and this unique feature is the key to achieving excellent high-speed and high-output characteristics simultaneously. The achieved performance includes a record 3-dB bandwidth of 310 GHz, high-power photonic millimeter-wave generation with an output power of over +13 dBm at 100 GHz, high-output-voltage photoreceiver operation at bit rates of up to 80 Gbit/s, and demultiplexing operation at 200 Gbit/s using a monolithic PD-EAM optical gate.
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Шангина, Е. Л., Смирнов, К. В., Морозов, Д. В., Ковалюк, В. В., Гольцман, Г. Н., Веревкин, А. А., et al. (2010). Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов. Физика и техника полупроводников, 44(11), 1475–1478.
Abstract: Методом субмиллиметровой спектроскопии с высоким временным разрешением измерены температурная и концентрационная зависимости полосы преобразования смесителей терагерцового диапазона AlGaAs/GaAs на разогреве двумерных электронов с фононным каналом их охлаждения. Полоса преобразования на уровне 3 дБ (f3 dB) при 4.2 K при изменении концентрации ns варьируется в пределах 150-250 МГц в соответствии со степенным законом f3 dB propto ns-0.5, что соответствует доминирующему механизму рассеяния на пьезоэлектрических фононах. Минимальное значение коэффициента потерь преобразования полупроводникового смесителя достигается в структурах с высокой подвижностью носителей mu>3·105 см2/В·с при 4.2 K.
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Ryabchun, S. A., Tretyakov, I. V., Pentin, I. V., Kaurova, N. S., Seleznev, V. A., Voronov, B. M., et al. (2009). Low-noise wide-band hot-electron bolometer mixer based on an NbN film. Radiophys. Quant. Electron., 52(8), 576–582.
Abstract: We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
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