Records |
Author |
Корнеев, Александр Александрович |
Title |
Квантовая эффективность и темновой счет NbN сверхпроводникового инфракрасного однофотонного детектора |
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Manuscript |
Year |
2006 |
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М. МПГУ |
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Ph.D. thesis |
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Russian |
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480 |
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Author |
Масленников, Сергей Николаевич |
Title |
Смесители на эффекте электронного разогрева для терагерцового и инфракрасного диапазонов |
Type |
Manuscript |
Year |
2007 |
Publication |
М. МПГУ |
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Keywords |
HEB, detector, mixer, terahertz, THz, infrared, IR, direct detection effect, conversion loss |
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Ph.D. thesis |
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Russian |
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481 |
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Author |
Финкель, М. И. |
Title |
Терагерцовые смесители на эффекте электронного разогрева в ультратонких плёнках NbN и NbTiN |
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Manuscript |
Year |
2006 |
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М. МПГУ |
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Keywords |
HEB, detector, mixer, terahertz, THz, infrared, IR, direct detection effect, conversion bandwidth, conversion loss |
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Ph.D. thesis |
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597 |
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Author |
Рябчун, С. А. |
Title |
Широкополосные высокостабильные терагерцовые смесители на горячих электронах из тонких сверхпроводниковых пленок NbN |
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Manuscript |
Year |
2009 |
Publication |
М. МПГУ |
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Pages |
98 |
Keywords |
HEB, mixer, terahertz, THz, stability, Allan variance, conversion bandwidth, in-situ technique, Au contacts |
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Ph.D. thesis |
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598 |
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Author |
Морозов, Дмитрий Владимирович |
Title |
Приемные устройства терагерцового диапазона на эффекте разогрева двумерного электронного газа в гетероструктурах AlGaAs/GaAs |
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Year |
2007 |
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М. МПГУ |
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Ph.D. thesis |
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RPLAB @ s @ |
Serial |
626 |
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Author |
Семенов, Александр Владимирович |
Title |
Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников |
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Manuscript |
Year |
2010 |
Publication |
М. МПГУ |
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Pages |
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Keywords |
SSPD, SNSPD, response |
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Ph.D. thesis |
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Russian |
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1150 |
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Author |
Смирнов, Константин Владимирович |
Title |
Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе |
Type |
Manuscript |
Year |
2000 |
Publication |
М. МПГУ |
Abbreviated Journal |
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Pages |
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Keywords |
2DEG, AlGaAs/GaAs heterostructures, NbN films |
Abstract |
Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств. |
Address |
Москва, МПГУ |
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Ph.D. thesis |
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no |
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Serial |
1830 |
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Author |
Гершензон, Е. М. |
Title |
Воздействие электромагнитного излучения на сверхпроводящую плёнку ниобия в резистивном состоянии |
Type |
Conference Article |
Year |
1982 |
Publication |
Тезисы докладов 22 Всесоюзной конференции по физике низких температур |
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79-80 |
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russian |
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no |
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Serial |
231 |
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Author |
Karasik, B. S.; Elantiev, A. I. |
Title |
Analysis of the noise performance of a hot-electron superconducting bolometer mixer |
Type |
Conference Article |
Year |
1995 |
Publication |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
229-246 |
Keywords |
HEB mixers |
Abstract |
A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done. |
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Pasadena, Ca |
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no |
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Serial |
258 |
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Author |
Karasik, B. S.; Elantiev, A. I. |
Title |
Noise temperature limit of a superconducting hot-electron bolometer mixer |
Type |
Journal Article |
Year |
1996 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
68 |
Issue |
6 |
Pages |
853-855 |
Keywords |
HEB mixer noise temperature, Johnson noise, thermal fluctuation noise, noise bandwidth |
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0003-6951 |
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no |
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260 |
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