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Author	Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.
Title	2.5 THz NbN hot electron mixer with integrated tapered slot antenna			Type	Journal Article
Year	1997	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
Volume	7	Issue	2	Pages	3548-3551
Keywords	NbN HEB mixers
Abstract	A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO₂membrane. A 0.5 micrometer thick SiO₂layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO₂layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO₃and H₂O₂.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1051-8223	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1595
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Author	Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol'tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D.
Title	9.6 μm wavelength mixing in a patterned YBa₂Cu₃O_7-δ thin film			Type	Conference Article
Year	1996	Publication	Proc. 7^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 7^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	337-348
Keywords	YBCO HTS HEB mixers
Abstract	Hot-electron bolometric (HEB) mixing of 9.6 gm infrared radiation from two lasers in high-quality YBa2Cu307_3 (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to -150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be -25 dB, of which 13 dB was due to the coupling loss. The IIEB mixer is very promising for use in heterodyne receivers within the whole infrared range.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1615
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Author	Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D.
Title	9.6 μm wavelength mixing in a patterned YBa₂Cu₃O_7‐δ thin film			Type	Journal Article
Year	1996	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
Volume	68	Issue	10	Pages	1418-1420
Keywords	YBCO HTS HEB mixers
Abstract	Hot‐electron bolometric (HEB) mixing of 9.6 μm infrared radiation from two lasers in high‐quality YBa2Cu3O7−δ (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to ∼150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be ∼25 dB, of which 13 dB was due to the coupling loss. The HEB mixer is very promising for use in heterodyne receivers within the whole infrared range.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0003-6951	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1613
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Author	Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.
Title	A fast infrared detector based on patterned YBCO thin film			Type	Journal Article
Year	1994	Publication	Supercond. Sci. Technol.	Abbreviated Journal	Supercond. Sci. Technol.
Volume	7	Issue	5	Pages	321-323
Keywords	YBCO HTS detector
Abstract	Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0953-2048	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1646
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Author	Blundell, R.; Kawamura, J. H.; Tong, C. E.; Papa, D. C.; Hunter, T. R.; Gol’tsman, G. N.; Cherednichenko, S. I.; Voronov, B. M.; Gershenzon, E. M.
Title	A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range			Type	Conference Article
Year	1998	Publication	Proc. 6-th Int. Conf. Terahertz Electron.	Abbreviated Journal	Proc. 6-th Int. Conf. Terahertz Electron.
Volume		Issue		Pages	18-20
Keywords	NbN HEB mixers
Abstract	We describe a heterodyne receiver designed to operate in the partially transparent atmospheric windows centered on 680 and 830 GHz. The receiver incorporates a niobium nitride thin film, cooled to 4.2 K, as the phonon-cooled hot-electron mixer element. The double sideband receiver noise, measured over the frequency range 680-830 GHz, is typically 700-1300 K. The instantaneous output bandwidth of the receiver is 600 MHz. This receiver has recently been used at the SubMillimeter Telescope, jointly operated by the Steward Observatory and the Max Planck Institute for Radioastronomy, for observations of the neutral carbon and CO spectral lines at 810 GHz and at 806 and 691 GHz respectively. Laboratory measurements on a second mixer in the same test receiver have yielded extended high frequency performance to 1 THz.
Address	Leeds, UK
Corporate Author				Thesis
Publisher	IEEE	Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN	0-7803-4903-2	Medium
Area		Expedition		Conference	IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171)
Notes				Approved	no
Call Number				Serial	1581
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Author	Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G.
Title	Absorption spectra in electron transitions between excited states of impurities in germanium			Type	Journal Article
Year	1975	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
Volume	22	Issue	4	Pages	95-97
Keywords	Ge, impurities, excited states, absorption spectra
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1773
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Author	Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsyna, N. G.; Chulkova, G. M.
Title	AC losses and submillimeter absorption in single crystals La2CuO4			Type	Journal Article
Year	1990	Publication	Phys. B Condens. Mat.	Abbreviated Journal	Phys. B Condens. Mat.
Volume	165-166	Issue		Pages	1269-1270
Keywords	metal-dielectric-La2Cu04
Abstract	The La2CuO4 single crystals were used to carry out the measurements of transmission spectra within the submillimeter range of wavelengths, as well as the capacitance C and conductivity G in the region of acoustic frequencies of the metal-dielectric-La2Cu04 system at low temperatures. The optical spectra display a threshold character. There takes place a sharp decreasing of transmission signal in the energy range of hυ>1.5meV. The C(ω,T) and G(ω,T) dependences have a universal form characteristic of relaxation processes of the Debye type. The relaxation time dependence displays a thermoactivation character τ(T)-exp(ξ/T) with a gap value of ξ≃2meV,coinciding with the optical one. It is assumed that there exist excitations with a characteristic energy ~ 2meV in La2Cu04.A possible nature of the revealed low-energy excitations is discussed.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0921-4526	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1686
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Author	Hübers, H.-W.; Semenov, A. D.; Richter, H.; Schubert, J.; Hadjiloucas, S.; Bowen, J. W.; Gol'tsman, G.; Voronov, B. M.; Gershenzon, E. M.
Title	Antenna pattern of the quasi-optical hot-electron bolometric mixer at terahertz frequencies			Type	Conference Article
Year	2001	Publication	Proc. 12^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 12^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	286-296
Keywords	NbN HEB mixers
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication	San Diego, CA, USA	Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	323
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Author	Gol'tsman, G. N.; Elant'iev, A. I.; Karasik, B. S.; Gershenzon, E. M.
Title	Antenna – coupled superconducting electron-heating bolometer			Type	Conference Article
Year	1993	Publication	Proc. 4^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 4^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	623-628
Keywords	HEB
Abstract	We propose a novel antenna-coupled superconducting bolometer based on electron-heating in the resistive state. A short narrow ultrathin super- conducting film strip (sized approximately 4x1x0.01 pm 3 ), which is in good thermal contact with the thermostat, serves as a resistive load for infrared or submillimeter current. In contrast to conventional isothermal super- conducting bolometers electron-heating ones can have a higher sensitivity which grows when filni. thickness is reduced. Response time of electron- heating bolometer does not depend on heat transfer from the film to the enviroment. To calculate the sensitivity (NEP), we have used experimental data on wideband Al, Nb and NbN bolometers which have the same un- derlying physical mechanism. The bolom.eters have been made in the form of a structure composed of a number of long narrow strips. The values of for Al, NEP have been found to be 1.5 . 113 -16 1 140 -15 ) and 2 . 10 – 14werT,-1/2 – Nb and NbN respectively. In the paper, the prospects are also discussed of improving the picosecond YBaCuO detector, developed recently. NEP value of the detector, if combined with a microantenna, can reach the order of 10- •ilz-v2.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1657
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P.
Title	Binding energy of a carrier with a neutral impurity atom in germanium and in silicon			Type	Journal Article
Year	1971	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
Volume	14	Issue	5	Pages	185-186
Keywords	Ge, Si, neutral impurity atom, binding energy
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1739
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Author	Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F.
Title	Broadband ultrafast superconducting NbN detector for electromagnetic radiation			Type	Journal Article
Year	1994	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
Volume	75	Issue	7	Pages	3695-3697
Keywords	NbN HEB
Abstract	An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	252
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Author	Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.
Title	Capture of free holes by charged acceptors in uniaxially deformed Ge			Type	Journal Article
Year	1988	Publication	Fizika i Tekhnika Poluprovodnikov	Abbreviated Journal	Fizika i Tekhnika Poluprovodnikov
Volume	22	Issue	3	Pages	540-543
Keywords	Ge, free holes, capture
Abstract	Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language	Russian	Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes	Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge			Approved	no
Call Number				Serial	1698
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G.
Title	Capture of photoexcited carriers by shallow impurity centers in germanium			Type	Journal Article
Year	1979	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
Volume	50	Issue	4	Pages	728-734
Keywords	Ge, photoexcited carriers, shallow impurity centers
Abstract	Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1720
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Author	Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R.
Title	Character of submillimeter photoconductivity in n-lnSb			Type	Journal Article
Year	1979	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
Volume	49	Issue	1	Pages	121-128
Keywords
Abstract	A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8).
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number	RPLAB @ phisix @			Serial	985
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Author	Svechnikov, S. I.; Antipov, S. V.; Vakhtomin, Y. B.; Goltsman, G. N.; Gershenzon, E. M.; Cherednichenko, S. I.; Kroug, M.; Kollberg, E.
Title	Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers			Type	Journal Article
Year	2001	Publication	Physics of Vibrations	Abbreviated Journal	Physics of Vibrations
Volume	9	Issue	3	Pages	205-210
Keywords	NbN HEB mixers
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1069-1227	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1551
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title	Cross section for binding of free carriers into excitons in germanium			Type	Journal Article
Year	1981	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
Volume	33	Issue	11	Pages	574
Keywords	Ge, excitons, photoconductivity
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1718
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Author	Gousev, Y. P.; Semenov, A. D.; Goghidze, I. G.; Pechen, E. V.; Varlashkin, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F.
Title	Current dependent noise in a YBa₂Cu₃O_7-δ hot-electron bolometer			Type	Journal Article
Year	1997	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
Volume	7	Issue	2	Pages	3556-3559
Keywords	YBCO HTS HEB mixers
Abstract	We investigated the output noise of a YBa₂Cu₃O_7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1051-8223	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1592
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Author	Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G.
Title	Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons			Type	Journal Article
Year	1975	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
Volume	40	Issue	2	Pages	311-315
Keywords	Ge, cyclotron resonance
Abstract	Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1768
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Author	Semenov, A. D.; Hübers, H.-W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M.
Title	Design and performance of the lattice-cooled hot-electron terahertz mixer			Type	Journal Article
Year	2000	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
Volume	88	Issue	11	Pages	6758-6767
Keywords	HEB mixer, charge imbalance, HF current distribution
Abstract	We present the measurements and the theoreticalmodel of the frequency-dependent noise temperature of a superconductor lattice-cooled hot-electron bolometer mixer in the terahertz frequency range. The increase of the noise temperature with frequency is a cumulative effect of the nonuniform distribution of the high-frequency current in the bolometer and the charge imbalance, which occurs at the edges of the normal domain and at the contacts with normal metal. We show that under optimal operation the fluctuation sensitivity of the mixer is determined by thermodynamic fluctuations of the noise power, whereas at small biases there appears additional noise, which is probably due to the flux flow. We propose the prescription of how to minimize the influence of the current distribution on the mixer performance.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	306
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Author	Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
Title	Determination of the limiting mobility of a two-dimensional electron gas in Al_xGa_1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time			Type	Journal Article
Year	1996	Publication	Phys. Rev. B Condens. Matter.	Abbreviated Journal	Phys. Rev. B Condens. Matter.
Volume	53	Issue	12	Pages	R7592-R7595
Keywords	2DEG, AlGaAs/GaAs heterostructures
Abstract	We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0163-1829	ISBN		Medium
Area		Expedition		Conference
Notes	PMID:9982274			Approved	no
Call Number				Serial	1612
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Author	Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
Title	Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions			Type	Journal Article
Year	1996	Publication	Surface Science	Abbreviated Journal	Surface Science
Volume	361-362	Issue		Pages	569-573
Keywords	2DEG, AlGaAs/GaAs heterostructures
Abstract	For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0039-6028	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1609
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Author	Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R.
Title	Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions			Type	Conference Article
Year	2002	Publication	Mater. Sci. Forum	Abbreviated Journal	Mater. Sci. Forum
Volume	384-3	Issue		Pages	107-116
Keywords	2DEG, AlGaAs/GaAs
Abstract	A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	Materials Science Forum
Notes				Approved	no
Call Number				Serial	1536
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Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S.
Title	Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K			Type	Journal Article
Year	1996	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
Volume	64	Issue	5	Pages	404-409
Keywords	2DEG, AlGaAs/GaAs heterostructures
Abstract	The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-3640	ISBN		Medium
Area		Expedition		Conference
Notes	http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”)			Approved	no
Call Number				Serial	1608
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Author	Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
Title	Effect of a high magnetic field on the spectrum of donors in InSb			Type	Journal Article
Year	1977	Publication	Fizika i Tekhnika Poluprovodnikov	Abbreviated Journal	Fizika i Tekhnika Poluprovodnikov
Volume	11	Issue	12	Pages	2373-2375
Keywords	InSb, energy spectrum, donors, high magnetic field
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language	Russian	Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes	Воздействие сильного магнитного поля на спектр доноров в InSb			Approved	no
Call Number				Serial	1729
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Author	Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I.
Title	Effect of a strong magnetic field on the spectrum of donors in InSb			Type	Journal Article
Year	1978	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
Volume	11	Issue	12	Pages	1395-1397
Keywords	InSb, spectrum of donors, strong magnetic field
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1725
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Author	Gershenzon, E. M.; Gol'tsman, G. N.
Title	Effect of electromagnetic radiation on a superconductor in a magnetic field			Type	Conference Article
Year	1988	Publication	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya	Abbreviated Journal	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume	52	Issue	3	Pages	449-451
Keywords
Abstract	The effect of electromagnetic radiation on thin superconducting films of Nb with a large number of static defects is investigated experimentally for the case where the film is in the resistive state due to an applied magnetic field and transport current. The results obtained are found to be well described by a model of spatially homogeneous electron heating. It is noted that the results obtained here for Nb films are also valid for Al, NbN, and MoRe films.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language	Russian	Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0367-6765	ISBN		Medium
Area		Expedition		Conference	4th Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Tallin, Estonian SSR, Apr. 1987
Notes				Approved	no
Call Number				Serial	1702
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R.
Title	Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium			Type	Journal Article
Year	1986	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
Volume	64	Issue	4	Pages	889-897
Keywords	Ge, trapping of free carriers
Abstract	Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1707
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Author	Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I.
Title	Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors			Type	Conference Article
Year	1978	Publication	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya	Abbreviated Journal	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume	42	Issue	6	Pages	1231-1234
Keywords	spectrum, semiconductors, admixtures, strong magnetic-field
Abstract
Address
Corporate Author				Thesis
Publisher	Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia	Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number	blagosklonskaya1978effect			Serial	1724
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Author	Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V.
Title	Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films			Type	Conference Article
Year	1996	Publication	Czech J. Phys.	Abbreviated Journal	Czech J. Phys.
Volume	46	Issue	S5	Pages	2489-2490
Keywords	Al, Be, Nb films
Abstract	The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0011-4626	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1767
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Author	Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D.
Title	Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films			Type	Journal Article
Year	1991	Publication	IEEE Trans. Magn.	Abbreviated Journal	IEEE Trans. Magn.
Volume	27	Issue	2	Pages	1317-1320
Keywords	YBCO, HTS, Nb HEB mixers
Abstract	A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1941-0069	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1681
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Author	Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
Title	Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures			Type	Journal Article
Year	1995	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
Volume	61	Issue	7	Pages	591-595
Keywords	2DEG, AlGaAs/GaAs heterostructures
Abstract	The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grﬁneisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a signiﬁcant discrepancy between the experimental and theoretical re-sults.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1624
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Author	Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E.
Title	Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate			Type	Journal Article
Year	1997	Publication	Phys. Rev. B	Abbreviated Journal	Phys. Rev. B
Volume	56	Issue	16	Pages	10089-10096
Keywords	disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity
Abstract	The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0163-1829	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1766
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Author	Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M.
Title	Electron-phonon interaction in disordered NbN films			Type	Journal Article
Year	1994	Publication	Phys. B Condens. Mat.	Abbreviated Journal	Phys. B Condens. Mat.
Volume	194-196	Issue		Pages	1355-1356
Keywords	NbN films
Abstract	Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0921-4526	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1649
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Author	Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gershenzon, E. M.
Title	Electron-phonon interaction in thin YBaCuO films and fast detectors			Type	Conference Article
Year	1993	Publication	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences	Abbreviated Journal	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
Volume	112	Issue		Pages	184-185
Keywords	YBCO HTS detectors
Abstract	The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor	Meissner, M.; Pohl, R. O.
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
Notes				Approved	no
Call Number				Serial	1662
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Author	Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V.
Title	Electron-phonon interaction in ultrathin Nb films			Type	Journal Article
Year	1990	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
Volume	70	Issue	3	Pages	505-511
Keywords	Nb films
Abstract	A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms. 1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	241
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Author	Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I.
Title	Electron-phonon scattering rate in impure NbC films			Type	Abstract
Year	1998	Publication	NASA/ADS	Abbreviated Journal	NASA/ADS
Volume		Issue		Pages	Y35.08
Keywords	NbC films
Abstract	The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA
Notes				Approved	no
Call Number				Serial	1591
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Author	Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I.
Title	Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity			Type	Conference Article
Year	1996	Publication	Czech. J. Phys.	Abbreviated Journal	Czech. J. Phys.
Volume	46	Issue	S2	Pages	857-858
Keywords	NbC films
Abstract	Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0011-4626	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1617
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Author	Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M.
Title	Electron–phonon interaction in disordered conductors			Type	Journal Article
Year	1999	Publication	Phys. Rev. B Condens. Matter	Abbreviated Journal	Phys. Rev. B Condens. Matter
Volume	263-264	Issue		Pages	190-192
Keywords	disordered conductors, electron-phonon interaction
Abstract	The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0921-4526	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1765
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Author	Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.
Title	Energy relaxation of two-dimensional electrons in the quantum Hall effect regime			Type	Journal Article
Year	2000	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
Volume	71	Issue	1	Pages	31-34
Keywords	2DEG, GaAs/AlGaAs heterostructures
Abstract	The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-3640	ISBN		Medium
Area		Expedition		Conference
Notes	http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”)			Approved	no
Call Number				Serial	1559
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L.
Title	Energy spectrum of acceptors in germanium and its response to a magnetic field			Type	Journal Article
Year	1977	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
Volume	45	Issue	4	Pages	769-776
Keywords	p-Ge, photoconductivity, energy spectrum, magnetic field
Abstract	We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1727
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Author	Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G.
Title	Energy spectrum of free excitons in germanium			Type	Journal Article
Year	1973	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
Volume	18	Issue	3	Pages	93
Keywords	Ge, free excitons, energy spectrum
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1734
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
Title	Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field			Type	Journal Article
Year	1977	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
Volume	45	Issue	3	Pages	555-565
Keywords	Ge, GaAs, magnetic field, donors, energy spectrum
Abstract	The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1728
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Author	Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.
Title	Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure			Type	Journal Article
Year	1989	Publication	Sov. Phys. and Technics of Semiconductors	Abbreviated Journal	Sov. Phys. and Technics of Semiconductors
Volume	23	Issue	8	Pages	843-846
Keywords	Ge, crystallography
Abstract	Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes	Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge			Approved	no
Call Number				Serial	1692
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Author	Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M.
Title	Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films			Type	Journal Article
Year	1993	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
Volume	63	Issue	5	Pages	681-683
Keywords	YBCO HTS detectors, nonequilibrium
Abstract	The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0003-6951	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1655
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Author	Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M.
Title	Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films			Type	Conference Article
Year	1994	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
Volume	2160	Issue		Pages	74-82
Keywords	YBCO HTS switches
Abstract	We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO₂ and NdGaO₃ substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
Address
Corporate Author				Thesis
Publisher	SPIE	Place of Publication		Editor	Buhrman, R.A.; Clarke, J.T.; Daly, K.; Koch, R.H.; Luine, J.A.; Simon, R.W.
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	Superconductive Devices and Circuits
Notes				Approved	no
Call Number				Serial	1638
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Author	Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M.
Title	Fast NbN superconducting switch controlled by optical radiation			Type	Journal Article
Year	1997	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
Volume	7	Issue	2	Pages	3734-3737
Keywords	NbN superconducting switch
Abstract	The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1051-8223	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1596
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Author	Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D.
Title	Fast-response superconducting electron bolometer			Type	Journal Article
Year	1989	Publication	Pisma v Zhurnal Tekhnicheskoi Fiziki	Abbreviated Journal	Pisma v Zhurnal Tekhnicheskoi Fiziki
Volume	15	Issue	3	Pages	88-92
Keywords	Nb HEB
Abstract	The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language	Russian	Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1694
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Author	Semenov, A. D.; Hübers, H.–W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M.
Title	Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer			Type	Conference Article
Year	2000	Publication	Proc. 11^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 11^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	39-48
Keywords	NbN HEB mixers
Abstract	We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	305
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Author	Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y.
Title	Germanium hot-electron narrow-band detector			Type	Journal Article
Year	1971	Publication	Sov. Radio Engineering And Electronic Physics	Abbreviated Journal	Sov. Radio Engineering And Electronic Physics
Volume	16	Issue	8	Pages	1346
Keywords	Ge HEB detectors
Abstract
Address
Corporate Author				Thesis
Publisher	Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037	Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1741
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Author	Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title	Heating of electrons in a superconductor in the resistive state by electromagnetic radiation			Type	Journal Article
Year	1984	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
Volume	59	Issue	2	Pages	442-450
Keywords	Nb HEB
Abstract	The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number	RPLAB @ phisix @			Serial	983
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title	Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches			Type	Conference Article
Year	1992	Publication	Progress in High Temperature Superconductivity	Abbreviated Journal	Progress in High Temperature Superconductivity
Volume	32	Issue		Pages	190-195
Keywords	superconducting films, heating of electrons
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	International Conference on High Temperature Superconductivity and Localization Phenomena , Moscow, Russia , 11 – 15 May 1991
Notes	https://books.google.co.kr/books?hl=en&lr=&id=uCI0DwAAQBAJ&oi=fnd&pg=PA190&ots=z7WGjXYWr4&sig=TQ6G6dKsmcj4faYe1ZLw_BFmps8			Approved	no
Call Number				Serial	1666
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Author	Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semyonov, A. D.; Sergeev, A. V.
Title	Heating of electrons in superconductor in the resistive state due to electromagnetic radiation			Type	Journal Article
Year	1984	Publication	Solid State Communications	Abbreviated Journal	Solid State Communications
Volume	50	Issue	3	Pages	207-212
Keywords	Nb HEB
Abstract	The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0038-1098	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1709
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Author	Semenov, A. D.; Gousev, Y. P.; Nebosis, R. S.; Renk, K. F.; Yagoubov, P.; Voronov, B. M.; Gol’tsman, G. N.; Syomash, V. D.; Gershenzon, E. M.
Title	Heterodyne detection of THz radiation with a superconducting hot‐electron bolometer mixer			Type	Journal Article
Year	1996	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
Volume	69	Issue	2	Pages	260-262
Keywords	NbN HEB mixers
Abstract	We report on the use of a superconducting hot‐electron bolometer mixer for heterodyne detection of terahertz radiation. Radiation with a wavelength of 119 μm was coupled to the mixer, a NbN microbridge, by a hybrid quasioptical antenna consisting of an extended hyperhemispherical lens and a planar logarithmic spiral antenna. We found, at an intermediate frequency of 1.5 GHz, a system double side band noise temperature of ≊40 000 K and conversion losses of 25 dB. We also discuss the possibilities of further improvement of the mixer performance.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0003-6951	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1610
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Author	Karasik, B. S.; Milostnaya, I. I.; Zorin, M. A.; Elantev, A. I.; Gol'tsman, G. N.; Gershenzon, E. M.
Title	High speed current switching of homogeneous YBaCuO film between superconducting and resistive states			Type	Journal Article
Year	1995	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
Volume	5	Issue	2	Pages	3042-3045
Keywords	YBCO HTS HEB switches
Abstract	Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1051-8223	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1620
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Author	Gol’tsman, G. N.; Gershenzon, E. M.
Title	High speed hot-electron superconducting bolometer			Type	Conference Article
Year	1993	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
Volume	2104	Issue		Pages	181-182
Keywords	NbN HEb, Nb, Al
Abstract	Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1Ã‚Âµm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q.
Address
Corporate Author				Thesis
Publisher	SPIE	Place of Publication		Editor	Birch, J.R.; Parker, T.J.
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	18th International Conference on Infrared and Millimeter Waves
Notes				Approved	no
Call Number				Serial	1652
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Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S.
Title	Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure			Type	Conference Article
Year	1997	Publication	Proc. 4-th Int. Semicond. Device Research Symp.	Abbreviated Journal	Proc. 4-th Int. Semicond. Device Research Symp.
Volume		Issue		Pages	163-166
Keywords	S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1603
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Author	Gerecht, E.; Musante, C. F.; Schuch, R.; Lutz, C. R.; Jr.; Yngvesson, K. S.; Mueller, E. R.; Waldivian, J.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title	Hot electron detection and mixing experiments in NbN at 119 micrometer wavelength			Type	Conference Article
Year	1995	Publication	Proc. 6^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 6^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	284-293
Keywords	NbN HEB mixers, detectors
Abstract	We have performed preliminary experiments with the goal of demonstrating a Hot Electron Bolometric (HEB) mixer for a 119 micrometer wavelength (2.5 THz). We have chosen a NbN device of size 700 x 350 micrometers. This device can easily be coupled to a laser LO source, which is advantageous for performing a prototype experiment. The relatively large size of the device means that the LO power required is in the mW range; this power can be easily obtained from a THz laser source. We have measured the amount of laser power actually absorbed in the device, and from this have estimated the best optical coupling loss to be about 10 di . We are developing methods for improving the optical coupling further. Preliminary measurements of the response of the device to a chopped black-body have not yet resulted in a measured receiver noise temperature. We expect to be able to complete this measurement in the near future.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1629
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Author	Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S.
Title	Hot electron quasioptical NbN superconducting mixer			Type	Journal Article
Year	1995	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
Volume	5	Issue	2	Pages	2232-2235
Keywords	NbN HEB mixers
Abstract	Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1051-8223	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1622
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Author	Gershenzon, E. M.; Gol'tsman, G. N.
Title	Hot electron superconductive mixers			Type	Conference Article
Year	1993	Publication	Proc. 4^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 4^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	618-622
Keywords	HEB mixers
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1656
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Author	Gershenzon, E. M.; Gol'tsman, G. N.
Title	Hot-electron superconducting mixers			Type	Conference Article
Year	1993	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
Volume	2104	Issue		Pages	329-330
Keywords
Abstract	The creation of low noise heterodyne receivers for frequencies above 1 THz is in the urgentneed for radio astronomy, laser spectroscopy, plasma diagnostic, etc. In this paper we discussthe nonlinear effect related to hot electrons in superconductors, and their potential use in lownoise submilimeter wave mixer. We also discuss results achieved so far as well as possible futuredevelopments.
Address
Corporate Author				Thesis
Publisher	SPIE	Place of Publication		Editor	Birch, J.R.; Parker, T.J.
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	18th International Conference on Infrared and Millimeter Waves
Notes				Approved	no
Call Number				Serial	1654
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Author	Gerecht, E.; Musante, C. F.; Jian, H.; Zhuang, Y.; Yngvesson, K. S.; Dickinson, J.; Goyette, T.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title	Improved characteristics of NbN HEB mixers integrated with log-periodic antennas			Type	Conference Article
Year	1999	Publication	Proc. 10^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 10^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	200-207
Keywords	NbN HEB mixers
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1574
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Author	Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M.
Title	Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses			Type	Journal Article
Year	1994	Publication	J. Supercond.	Abbreviated Journal	J. Supercond.
Volume	7	Issue	4	Pages	751-755
Keywords	YBCO HTS detector, nonequilibrium response
Abstract	The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0896-1107	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1636
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Author	Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M.
Title	Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films			Type	Journal Article
Year	1995	Publication	JETP	Abbreviated Journal	JETP
Volume	80	Issue	5	Pages	960-964
Keywords
Abstract	The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number	RPLAB @ phisix @			Serial	989
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Lugovaya, G. Ya.; Serebryakova, N. A.; Chinkova, E. V.
Title	Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials			Type	Journal Article
Year	1992	Publication	Sverkhprovodimost': Fizika, Khimiya, Tekhnika	Abbreviated Journal	Sverkhprovodimost': Fizika, Khimiya, Tekhnika
Volume	5	Issue	6	Pages	1129-1140
Keywords	IR HEB detectors
Abstract	Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language	Russian	Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0131-5366	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1673
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E.
Title	Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state			Type	Journal Article
Year	1988	Publication	Sov. J. Low Temp. Phys.	Abbreviated Journal	Sov. J. Low Temp. Phys.
Volume	14	Issue	7	Pages	414-420
Keywords	HEB
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes	Duplicated as 1697			Approved	no
Call Number				Serial	236
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E.
Title	Intense electromagnetic radiation heating of superconductor electrons in resistive state			Type	Journal Article
Year	1988	Publication	Fizika Nizkikh Temperatur	Abbreviated Journal	Fizika Nizkikh Temperatur
Volume	14	Issue	7	Pages	753-763
Keywords	Nb HEB
Abstract	An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1697
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Author	Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title	Interaction of electrons with thermal phonons in YBa₂Cu₃O_7-δ films at low temperatures			Type	Journal Article
Year	1989	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
Volume	50	Issue	5	Pages	283-286
Keywords	YBCO HTS films
Abstract	The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1690
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Author	Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I.
Title	Intervalley cyclotron-impurity resonance of electrons in n-Ge			Type	Journal Article
Year	1976	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
Volume	24	Issue	3	Pages	125-128
Keywords	n-Ge, cyclotron-impurity resonance
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1730
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Author	Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G.
Title	Investigation of excited donor states in GaAs			Type	Journal Article
Year	1974	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
Volume	7	Issue	10	Pages	1248-1250
Keywords	GaAs, excited donor states
Abstract
Address
Corporate Author				Thesis
Publisher	Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa	Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1733
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title	Investigation of free excitons in Ge and their condensation at submillimeter wavelengths			Type	Journal Article
Year	1976	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
Volume	43	Issue	1	Pages	116-122
Keywords	Ge, free excitons
Abstract	Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1731
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Author	Gershenzon, E. M.; Goltsman, G. N.; Orlov, L.
Title	Investigation of population and ionization of donor excited states in Ge			Type	Conference Article
Year	1976	Publication	Physics of Semiconductors	Abbreviated Journal	Physics of Semiconductors
Volume		Issue		Pages	631-634
Keywords	Ge, donor excited states
Abstract
Address	Amsterdam
Corporate Author				Thesis
Publisher	North-Holland Publishing Co.	Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1732
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title	Kinetics of electron and hole binding into excitons in germanium			Type	Journal Article
Year	1983	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
Volume	57	Issue	2	Pages	369-376
Keywords	Ge, electron and hole binding
Abstract	The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1711
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Author	Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title	Kinetics of submillimeter impurity and exciton photoconduction in Ge			Type	Journal Article
Year	1982	Publication	Optics and Spectroscopy	Abbreviated Journal	Optics and Spectroscopy
Volume	52	Issue	4	Pages	454-455
Keywords	Ge, exciton photoconduction
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1715
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Author	Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V.
Title	Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound			Type	Journal Article
Year	1987	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
Volume	46	Issue	6	Pages	285-287
Keywords	YBCO HTS HEB
Abstract	For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1706
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Author	Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title	Limiting characteristic of fast superconducting bolometers			Type	Journal Article
Year	1989	Publication	Sov. Phys.-Tech. Phys.	Abbreviated Journal	Sov. Phys.-Tech. Phys.
Volume	34	Issue		Pages	195-199
Keywords	HEB
Abstract	Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes	О предельных характеристиках быстродействующих серхпроводниковых болометров			Approved	no
Call Number				Serial	237
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Author	Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V.
Title	Limiting characteristics of fast-response superconducting bolometers			Type	Journal Article
Year	1989	Publication	Zhurnal Tekhnicheskoi Fiziki	Abbreviated Journal	Zhurnal Tekhnicheskoi Fiziki
Volume	59	Issue	2	Pages	11-120
Keywords	HEB
Abstract	Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1696
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Author	Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.
Title	Low energy excitation in La₂CuO₄			Type	Journal Article
Year	1990	Publication	Sverkhprovodimost': Fizika, Khimiya, Tekhnika	Abbreviated Journal	Sverkhprovodimost': Fizika, Khimiya, Tekhnika
Volume	3	Issue	5	Pages	832-837
Keywords	metal-dielectric-La2CuO4, monocrystals
Abstract	Measurements of transmission and photoconductivity spectra in submillimeter wave length range as well as of capacity C and conductivity G in the region of acoustic frequencies of metal-dielectric-La2CuO4 system at low temperatures are performed using La2CuO4 monocrystals. Optical spectra posses a threshold character, a sharp decrease of transmission and photocoductivity signal occurs in the energy region hν>1.5 MeV. C(ω,T) and G(ω, T) dependences have a universal form typical of Debye type relaxation processes. Relaxation time dependence is of thermoactivated character τ(T)∼exp(ξ/T) with the gap value ξ≅2 meV. It is assumed that excitations with characteristic energy of ∼2 meV exist in La2CuO4. A possible nature of the detected low-energy excitations is discussed.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1688
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Author	Yngvesson, K. S.; Gerecht, E.; Musante, C. F.; Zhuang, Y.; Ji, M.; Goyette, T. M.; Dickinson, J. C.; Waldman, J.; Yagoubov, P. A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title	Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN			Type	Conference Article
Year	1999	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
Volume	3795	Issue		Pages	357-368
Keywords	NbN HEB mixers
Abstract	We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible.
Address
Corporate Author				Thesis
Publisher	SPIE	Place of Publication		Editor	Hwu, R.J.; Wu, K.
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	Terahertz and Gigahertz Photonics
Notes				Approved	no
Call Number				Serial	1561
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Author	Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M.
Title	Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon			Type	Journal Article
Year	2001	Publication	Jetp Lett.	Abbreviated Journal	Jetp Lett.
Volume	73	Issue	1	Pages	44-47
Keywords	uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field
Abstract	The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-3640	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1752
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Author	Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M.
Title	Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz			Type	Conference Article
Year	1998	Publication	Proc. 9^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 9^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	105-114
Keywords	NbN HEB mixers
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1587
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.
Title	Measurement of the energy gap in the compound YBaCu₃O_9-δ on the basis of the IR absorption spectrum			Type	Journal Article
Year	1987	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
Volume	46	Issue	5	Pages	237-238
Keywords	YBCO HTS detectors
Abstract	For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1703
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Author	Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G.
Title	Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields			Type	Journal Article
Year	1972	Publication	Presumably: Sov. Phys. Semicond. \| Физика и техника полупроводников	Abbreviated Journal	Presumably: Sov. Phys. Semicond. \| Физика и техника полупроводников
Volume	6	Issue		Pages	362-363
Keywords	Ge, cyclotron resonance, quantizing magnetic fields
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1774
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Author	Gershenzon, E. M.; Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title	Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation			Type	Journal Article
Year	1991	Publication	IEEE Trans. Magn.	Abbreviated Journal	IEEE Trans. Magn.
Volume	27	Issue	2	Pages	1321-1324
Keywords	YBCO HTS detectors
Abstract	Ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter waves to near infrared. With an increase in radiation frequency, the Josephson detection at the grain-boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. The electron-phonon relaxation time tau /sub eph/ is determined from direct measurements, quasi-stationary electron heating measurements, and the frequency dependence of the current at which maximum voltage shift is observed. The temperature dependence of tau /sub eph/ at T<or=40 K was found to be tau /sub eph/ approximately T/sup -1/. The results show that detectors with a response time of a few picoseconds at nitrogen temperature are attainable.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1941-0069	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1679
Permanent link to this record



Author	Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title	Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation			Type	Journal Article
Year	1990	Publication	Solid State Communications	Abbreviated Journal	Solid State Communications
Volume	76	Issue	4	Pages	493-497
Keywords	YBCO HTS detectors
Abstract	The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0038-1098	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1685
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D.
Title	Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state			Type	Journal Article
Year	1990	Publication	Sov. Supercond.	Abbreviated Journal	Sov. Supercond.
Volume	3	Issue	10	Pages	1582-1597
Keywords	HEB mixers
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	240
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Author	Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Svechnikov, S. I.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.
Title	NbN hot electron bolometric mixer for 2.5 THz: the phonon cooled version			Type	Conference Article
Year	1997	Publication	Proc. 8^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 8^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	258-271
Keywords	NbN HEB mixers
Abstract	We describe an investigation of a NbN HEB mixer for 2.5 THz. NbN HEBs are phonon-cooled de-. vices which are expected, according to theory, to achieve up to 10 GHz IF conversion gain bandwidth. We have developed an antenna coupled device using a log-periodic antenna and a silicon lens. We have demon- strated that sufficient LO power can be coupled to the device in order to bring it to the optimum mixer oper- ating point. The LO power required is less than 1 microwatts as measured directly at the device. We also describe the impedance characteristics of NbN devices and compare them with theory. The experimental results agree with theory except for the imaginary part of the impedance at very low frequencies as was demonstrated by other groups.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1605
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Author	Gerecht, E.; Musante, C. F.; Zhuang, Y.; Yngvesson, K. S.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title	NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers			Type	Journal Article
Year	1999	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
Volume	47	Issue	12	Pages	2519-2527
Keywords	NbN HEB mixers
Abstract	New advances in hot electron bolometer (HEB) mixers have recently resulted in record-low receiver noise temperatures at terahertz frequencies. We have developed quasi-optically coupled NbN HEB mixers and measured noise temperatures up to 2.24 THz, as described in this paper. We project the anticipated future performance of such receivers to have even lower noise temperature and local-oscillator power requirement as well as wider gain and noise bandwidths. We introduce a proposal for integrated focal plane arrays of HEB mixers that will further increase the detection speed of terahertz systems.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1557-9670	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1560
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Author	Gol'tsman, G. N.; Karasik, B. S.; Okunev, O. V.; Dzardanov, A. L.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.
Title	NbN hot electron superconducting mixers for 100 GHz operation			Type	Journal Article
Year	1995	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
Volume	5	Issue	2	Pages	3065-3068
Keywords	NbN HEB mixers
Abstract	NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1051-8223	ISBN		Medium
Area		Expedition		Conference
Notes	About LO power required			Approved	no
Call Number				Serial	255
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Author	Huebers, H.-W.; Semenov, A.; Schubert, J.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Krabbe, A.; Roeser, H.-P.
Title	NbN hot-electron bolometer as THz mixer for SOFIA			Type	Conference Article
Year	2000	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
Volume	4014	Issue		Pages	195-202
Keywords	NbN HEB mixers, airborne, stratospheric observatory, SOFIA
Abstract	Heterodyne receivers for applications in astronomy need quantum limited sensitivity. We have investigated phonon- cooled NbN hot electron bolometric mixers in the frequency range from 0.7 THz to 5.2 THz. The devices were 3.5 nm thin films with an in-plane dimension of 1.7 X 0.2 micrometers ² integrated in a complementary logarithmic spiral antenna. The best measured DSB receiver noise temperatures are 1300 K (0.7 THz), 2000 K (1.4 THz), 2100 K (1.6 THz), 2600 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz), and 8800 K (5.2 THz). The sensitivity fluctuation, the long term stability, and the antenna pattern were measured. The results demonstrate that this mixer is very well suited for GREAT, the German heterodyne receiver for SOFIA.
Address
Corporate Author				Thesis
Publisher	SPIE	Place of Publication		Editor	Melugin, R.K.; Roeser, H.-P.
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	Airborne Telescope Systems
Notes				Approved	no
Call Number				Serial	1554
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Author	Gousev, Yu. P.; Olsson, H. K.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title	NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz			Type	Conference Article
Year	1998	Publication	Proc. 9^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 9^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	121-129
Keywords	NbN HEB mixers
Abstract	We report on noise temperature measurements for a NbN phonon-cooled hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. Radiation was coupled to the mixer, placed in a vacuum chamber of He cryostat, by means of a planar spiral antenna and a Si immersion lens. A backward-wave oscillator, tunable throughout the spectral range, delivered an output power of few 1.1W that was enough for optimum operation of the mixer. At 4.2 K ambient temperature and 1.025 THz radiation frequency, we obtained a receiver noise temperature of 1550 K despite of using a relatively noisy room-temperature amplifier at the intermediate frequency port. The noise temperature was fairly constant throughout the entire operation range and for intermediate frequencies from 1 GHz to 2 GHz.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1588
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Author	Huebers, H.-W.; Schubert, J.; Semenov, A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Schwaab, G. W.
Title	NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers			Type	Conference Article
Year	1999	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
Volume	3828	Issue		Pages	410-416
Keywords	NbN HEB mixers
Abstract	We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers ² integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed.
Address
Corporate Author				Thesis
Publisher	Spie	Place of Publication		Editor	Chamberlain, J.M.
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	Terahertz Spectroscopy and Applications II
Notes				Approved	no
Call Number				Serial	1477
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Author	Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title	New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz			Type	Journal Article
Year	1999	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
Volume	9	Issue	2	Pages	4217-4220
Keywords	NbN HEB mixers
Abstract	NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1051-8223	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1568
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Author	Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R.
Title	Noise characteristics of a NbN hot-electron mixer at 2.5 THz			Type	Journal Article
Year	1997	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
Volume	7	Issue	2	Pages	3572-3575
Keywords	NbN HEB mixers
Abstract	The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1051-8223	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1594
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Author	Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M.
Title	Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies			Type	Conference Article
Year	1998	Publication	Proc. 28th European Microwave Conf.	Abbreviated Journal	Proc. 28th European Microwave Conf.
Volume	1	Issue		Pages	294-299
Keywords	NbN HEB mixers
Abstract	In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	28th European Microwave Conference
Notes				Approved	no
Call Number				Serial	1580
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Author	Gol'tsman, G. N.; Karasik, B. S.; Svechnikov, S. I.; Gershenzon, E. M.; Ekström, H.; Kollberg E.
Title	Noise temperature of NbN hot—electron quasioptical superconducting mixer in 200-700 GHz range			Type	Abstract
Year	1995	Publication	Proc. 6^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 6^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	268
Keywords	NbN HEB mixers, noise temperature
Abstract	The electron heating effect in superconducting films is becoming very attractive for the development of THz range mixers because of the absence of frequency limitations inherent in the bolometric mechanism. However, the evidence for the spectral dependence of the position of optimal operating point has been found recently for NbN thin film devices 1.2 • The effect is presumably attributed to the variation in the absorption of radiation depending on the frequency. Since the resistive state is not spatially uniform the coupling efficiency of the mixer device with radiation can be different for frequencies larger than Zeilh and those smaller than 2Alh (d is the effective superconducting gap in the resistive state). To study the effect more thoroughly we have investigated the noise temperature of quasioptical NbN mixer device with broken hue tapered slot antenna in the frequency range 200-700 GHz. The device consists of several (5-10) parallel strips 1 jim wide and 6-7 tun thick made from NbN film on Si0 2 -Si 3 N 4 -Si membrane. The strips are connected with the gold contacts of the slot-line antenna which serves both as bias and IF leads. We used backward wave oscillators as LO sources and a standard hot/cold load technique for noise temperature measurements. The frequency dependence of noise temperature is mainly determined by two factors: frequency properties of the antenna and frequency dependence of the NbN film impedance. To separate both factors we monitored the frequency dependence of the device responsivity in the detector mode at a higher temperature within the superconducting transition where the impedance of NbN film is close to its normal resistance. In this case the impedance of the device itself is frequency independent. The experimental results will be reported at the Symposium. 1. G. Gollsman, S. Jacobsson, H. EkstrOm, B. Karasik, E. Kollberg, and E. Gershenzon, “Slot-line tapered antenna with NbN hot electron mixer for 300-360 GHz operation,” Proc of the 5th Int. Symp. on Space Terahertz Technology, pp. 209-213a, May 10-12,1994. 2. B.S. Karasik, G.N. Gol i tsman, B.M. Voronov, S.I. Svechnikov, E.M. Gershenzon, H. Ekstrom, S. Jacobsson, E. Kollberg, and K.S. Yngvesson, “Hot electron quasioptical NbN superconducting mixer,” presented at the ASC94, submitted to IEEE Trans. on Appl. Superconductivity.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1627
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Author	Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M.
Title	Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz			Type	Journal Article
Year	2001	Publication	Physics of Vibrations	Abbreviated Journal	Physics of Vibrations
Volume	9	Issue	4	Pages	242-245
Keywords	NbN HEB mixers
Abstract
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1069-1227	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1550
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Author	Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Aksaev, E. E.; Gershenzon, E. M.
Title	Non-equilibrium quasiparticle response to radiation and bolometric effect in YBaCuO films			Type	Journal Article
Year	1993	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
Volume	3	Issue	1	Pages	2132-2135
Keywords	YBCO HTS HEB detectors
Abstract	The voltage photoresponse of structured current biased YBCO films on different substrates to 20-ps laser pulses of 0.63- mu m and 1.54- mu m wavelengths and to continuously modulated radiation of 2-mm wavelength is measured to temperatures around T_c. Fast picosecond decay of the response to pulsed radiation is followed by slow exponential relaxation with a nanosecond characteristic time depending on the substrate material and film dimensions. The slow component does not depend on wavelength and is attributed to the bolometric effect, while the magnitude of the fast component associated with nonequilibrium response rises with wavelength. More than an order-of-magnitude increase of the nonequilibrium response is seen from near-infrared to millimeter-wave range. This dependence plausibly reflects the low efficiency of multiplication of photoexcited electrons in YBaCuO compared to conventional superconductors.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	1558-2515	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1659
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Author	Gol’tsman, G. N.; Kouminov, P. B.; Goghidze, I. G.; Karasik, B. S.; Gershenzon, E. M.
Title	Nonbolometric and fast bolometric responses of YBaCuO thin films in superconducting, resistive, and normal states			Type	Conference Article
Year	1994	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
Volume	2159	Issue		Pages	81-86
Keywords	YBCO HTS HEB, nonbolornetric
Abstract	The transient voltage response in both epitaxial and granular YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 micrometers and 1.54 micrometers was studied. In normal and resistive states both types of films demonstrate two components: nonequilibrium picosecond component and following bolometric nanosecond. The normalized amplitudes are almost the same for all films. In superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to several orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of order parameter by the excess of quasiparticles followed by the change of resistance in normal and resistive states or kinetic inductance in superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the crossection for current percolation through the disordered network os Josephson weak links and by a decrease of condensate density in neighboring regions.
Address
Corporate Author				Thesis
Publisher	SPIE	Place of Publication		Editor	Nahum, M.; Villegier, J.-C.
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	High-Temperature Superconducting Detectors: Bolometric and Nonbolometric
Notes				Approved	no
Call Number				Serial	1641
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Author	Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M.
Title	Nonequilibrium and bolometric photoresponse in patterned YBa₂Cu₃O_7−δ thin films			Type	Journal Article
Year	1994	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
Volume	76	Issue	3	Pages	1902-1909
Keywords	YBCO HTS HEB detector, nonequilibrium response
Abstract	Epitaxial laser deposited YBa2Cu3O7−δ films of ∼50 nm thickness were patterned into detectors consisting of ten parallel 1 μm wide strips in order to study nonequilibrium and bolometric effects. Typically, the patterned samples had critical temperatures around 86 K, transition widths around 2 K and critical current densities above 1×106A/cm2 at 77 K. Pulsed laser measurements at 0.8 μm wavelength (17 ps full width at half maximum) showed a ∼30 ps response, attributed to electron heating, followed by a slower bolometric decay. Amplitude modulation in the band fmod=100 kHz–10 GHz of a laser with wavelength λ=0.8 μm showed two different thermal relaxations in the photoresponse. Phonon escape from the film (∼3 ns) is the limiting process, followed by heat diffusion in the substrate. Similar relaxations were also seen for λ=10.6 μm. The photoresponse measurements were made with the film in the resistive state and extended into the normal state. These states were created by supercritical bias currents. Measurements between 75 and 95 K (i.e., from below to above Tc) showed that the photoresponse was proportional to dR/dT for fmod=1 MHz and 4 GHz. The fast response is limited by the electron‐phonon scattering time, estimated to 1.8 ps from experimental data. The responsivity both at 0.8 and 10.6 μm wavelength was ∼1.2 V/W at fmod=1 GHz and the noise equivalent power was calculated to 1.5×10−9 WHz−1/2 for the fast response.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1637
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A.
Title	Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation			Type	Conference Article
Year	1994	Publication	Council on Low-temp. Phys.	Abbreviated Journal	Council on Low-temp. Phys.
Volume		Issue		Pages	82-83
Keywords	YBCO HTS HEB
Abstract
Address	Dubna
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language	Russian	Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	Joint Inst. for Nuclear Research, Dubna (Russian Federation); 296 p; 1994; p. 82-83; 30. Conference on low-temperature physics; 30. Soveshchanie po fizike nizkikh temperatur; Dubna (Russian Federation); 6-8 Sep 1994
Notes	Неравновесный и болометрический отклик YBaCuO пленок в резиотивном состоянии на инфракрасное лазерное излучение малой интенсивности			Approved	no
Call Number				Serial	1632
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