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| Author | Смирнов, Константин Владимирович | ||||
Title  |
Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе | Type | Manuscript | ||
| Year | 2000 | Publication | М. МПГУ | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords | 2DEG, AlGaAs/GaAs heterostructures, NbN films | ||||
| Abstract | Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств. | ||||
| Address | Москва, МПГУ | ||||
| Corporate Author | Thesis | Ph.D. thesis | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1830 | |||
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| Author | Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В. | ||||
| Title |
Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе | Type | Book Whole | ||
| Year | 2012 | Publication | Abbreviated Journal | ||
| Volume | Issue | Pages | |||
| Keywords | 2DEG, AlGaAs/GaAs, NbN detectors | ||||
| Abstract | Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники. | ||||
| Address | Москва | ||||
| Corporate Author | Thesis | ||||
| Publisher | Прометей, МПГУ | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-4263-0118-4 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | УДК: 537.311 | Approved | no | ||
| Call Number | Serial | 1818 | |||
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| Author | Селиверстов, С. В.; Финкель, М. И.; Рябчун, С. А.; Воронов, Б. М.; Каурова, Н. С.; Селезнев, В. А.; Смирнов, К. В.; Вахтомин, Ю. Б.; Пентин, И. В.; Гольцман, Г. Н. | ||||
| Title |
Терагерцевый сверхпроводниковый детектор с аттоджоулевым энергетическим разрешением и постоянной времени 25 пс | Type | Conference Article | ||
| Year | 2014 | Publication | Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» | Abbreviated Journal | |
| Volume | 1 | Issue | Pages | 91-92 | |
| Keywords | NbN HEB | ||||
| Abstract | Представлены результаты измерения энергетического разрешения терагерцевого сверхпроводникового NbN-детектора на эффектеэлектронного разогрева, работающего при температуре около 10 К. Использование инновационной in situ технологии производства привело к существенному улучшению чувствительности детектора. Увеличение быстродействия детектора было достигнуто за счет реализации дополнительного диффузионного канала охла-ждения электронной подсистемы. Измеренное значение эквивалентной мощности шума на частоте 2.5 ТГц составило 2.0×10-13Вт•Гц-0.5, постоянной времени 25 пс. Соответствующее расчетное значение энергетического разрешения составило 2.5 аДж. | ||||
| Address | Нижний Новгород, Россия | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1833 | |||
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| Author | Корнеев, А. А.; Окунев, О. В.; Чулкова, Г. М.; Смирнов, К. В.; Милостная, И. И.; Минаева, О. В.; Корнеева, Ю. П.; Каурова, Н. С.; Воронов, Б. М.; Гольцман, Г. Н. | ||||
| Title |
Спонтанные и фотоиндуцированные резистивные состояния в узких сверхпроводящих NbN полосках | Type | Book Whole | ||
| Year | 2015 | Publication | Abbreviated Journal | ||
| Volume | Issue | Pages | |||
| Keywords | NbN films | ||||
| Abstract | Монография посвящена актуальной проблеме современной фотоники: разработке высокочувствительных и быстродействующих сверхпроводниковых однофотонных детекторов на основе тонкой пленки NbN. В работе исследуются неравновесные процессы, протекающие в тонкой сверхпроводящей пленке после поглощения инфракрасного фотона и приводящие к возникновению резистивного состояния. На этих процессах основан механизм фотоотклика исследуемого в работе однофотонного детектора. В частности, исследуются зависимости квантовой эффективности и скорости темнового счета от геометрических параметров детектора: толщины пленки, ширины полоски, а также от величины транспортного тока детектора. Монография предназначена для студентов старших курсов, аспирантов и начинающих исследователей, работающих в области сверхпроводниковой наноэлектроники и радиофизики. | ||||
| Address | Москва | ||||
| Corporate Author | Thesis | ||||
| Publisher | МПГУ | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-4263-0269-3 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | УДК: 535; Число страниц: 108 | Approved | no | ||
| Call Number | Serial | 1812 | |||
| Permanent link to this record | |||||
| Author | Смирнов, Константин Владимирович | ||||
| Title |
Создание приборов на сверхпроводниковых счетчиках фотонов и методов диагностики КМОП микросхем, гетероструктур и лазеров на квантовых точках | Type | Report | ||
| Year | 2009 | Publication | Abbreviated Journal | ||
| Volume | Issue | Pages | |||
| Keywords | NbN SSPD | ||||
| Abstract | Этап №1 (дата окончания: 30.09.2009) Разработана методика изготовления сверхпроводниковых однофотонных детекторов (SSPD) с монокристаллической структурой пленки сверхмалой толщины. Изготовлены экспериментальные образцы сверхпроводниковых однофотонных детекторов (SSPD). Разработана методика пакетирования сверхпроводникового однофотонного детектора в оптический узел с одномодовым оптоволокном. Изготовлены экспериментальные образцы приемных модулей на основе однофотонных сверхпроводниковых детекторов из NbN-нанопленок. Этап №2 (дата окончания: 28.10.2009) Разработаны методы диагностики КМОП микросхем, гетероструктур и лазеров на квантовых точках и методика измерения мощности излучения полупроводниковых лазеров на квантовых точках с использованием сверхпроводниковых однофотонных детекторов (SSPD). Проведена технико-экономическая оценка рыночного потенциала полученных результатов. |
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| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Министерство образования и науки РФ | Place of Publication | Editor | ||
| Language | Russian | Summary Language | Original Title | ||
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| Notes | Отчет о НИР/НИОКР; Министерство образования и науки РФ; Номер гранта (контракта): 02.513.11.3446; Дата гранта (контракта): 03.06.2009 | Approved | no | ||
| Call Number | Serial | 1828 | |||
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| Author | Корнеев, А. А.; Минаева, О.; Рубцова, И.; Милостная, И.; Чулкова, Г.; Воронов, Б.; Смирнов, К.; Селезнёв, В.; Гольцман, Г.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Верёвкин, А.; Sobolewski, R. | ||||
| Title |
Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN | Type | Journal Article | ||
| Year | 2005 | Publication | Квантовая электроника | Abbreviated Journal | |
| Volume | 35 | Issue | 8 | Pages | 698-700 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | Представлены результаты исследований сверхпроводящих однофотонных детекторов, изготовленных из ультратонкой пленки NbN. Развитие технологического процесса изготовления детекторов, а также снижение рабочей температуры до 2 К позволили существенно увеличить квантовую эффективность: для видимого света (λ = 0.56 мкм) она составила 30%–40%, т.е. достигла предела, определяемого коэффициентом поглощения пленки. С ростом длины волны квантовая эффективность экспоненциально падает, составляя ~20% на λ=1.55 мкм и ~0.02% на λ = 5 мкм. При скорости темнового счета ~10-4s-1 экспериментально измеренная эквивалентная мощность шума составила 1.5 × 10-20 Вт/Гц-1/2; в дальнейшем она может быть уменьшена до рекордно низкого значения 5 × 10-21 Вт/Гц-1/2. Временное разрешение детектора равно 30 пс. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Duplicated as 383 (Superconducting single-photon ultrathin NbN film detector) | Approved | no | ||
| Call Number | Serial | 382 | |||
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| Author | Вахтомин, Ю. Б.; Антипов, С. В.; Масленников, С. Н.; Смирнов, К. В.; Поляков, С. Л.; Чжан, В.; Свечников, С. И.; Каурова, Н. С.; Гришина, Е. В.; Воронов, Б. М.; Гольцман, Г. Н. | ||||
| Title |
Квазиоптические смесители терагерцового диапазона на основе эффекта разогрева электронов в тонких пленках NbN | Type | Conference Article | ||
| Year | 2006 | Publication | Proc. 16th Int. Crimean Microwave and Telecommunication Technology | Abbreviated Journal | |
| Volume | 2 | Issue | Pages | 688-689 | |
| Keywords | NbN HEB mixers | ||||
| Abstract | Представлены результаты измерения рактеристик смесителей на эффекте разогрева электронов в тонких сверхпроводниковых пленках NbN. Смесители были изготовлены на основе пленок NbN толщиной 2-3.5 нм осажденных на кремниевую подложку с буферным подсло- ем MgO. Смесительный элемент согласовывался с планар- ной логопериодической спиральной антенной. Лучшее зна- чение шумовой температуры приемника на основе NbN смесителя составило 1300 К и 3100 К на частотах гетеро- дина 2.5 TГц и 3.8 ТГц, соответственно. Максимальное зна- чение полосы преобразования, измеренной на частоте 900 |Ц, достигло значения 5.2 ГГц для смесителя изготовлен- ного из NbN пленки толщиной 2 нм. Оптимальная мощность Представлены результаты измерения ха- гетеродинного источника составила 1-3 мкВт для смесите- лей с различным объемом смесительного элемента. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Duplicated as 1445 | Approved | no | ||
| Call Number | Serial | 1446 | |||
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| Author | Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. | ||||
| Title |
Universal bottleneck for thermal relaxation in disordered metallic films | Type | Journal Article | ||
| Year | 2020 | Publication | JETP Lett. | Abbreviated Journal | Jetp Lett. |
| Volume | 111 | Issue | 2 | Pages | 104-108 |
| Keywords | NbN disordered metallic films, thermal relaxation | ||||
| Abstract | We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-3640 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1164 | |||
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| Author | Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikov, Sergey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory | ||||
| Title |
Ultrawide noise bandwidth of NbN hot-electron bolometer mixers with in situ gold contacts | Type | Journal Article | ||
| Year | 2011 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
| Volume | 21 | Issue | 3 | Pages | 620-623 |
| Keywords | NbN HEB mixer bandwidth | ||||
| Abstract | We report a noise bandwidth of 7 GHz in the new generation of NbN hot-electron bolometer (HEB) mixers that are being developed for the space observatory Millimetron. The HEB receiver driven by a 2.5-THz local oscillator offered a noise temperature of 600 K in a 50-MHz final detection bandwidth. As the filter center frequency was swept this value remained nearly constant up to the cutoff frequency of the cryogenic amplifier at 7 GHz. We believe that such a low value of the noise temperature is due to reduced radio frequency (RF) loss at the interface between the superconducting film and the gold contacts. We have also performed gain bandwidth measurements at the superconducting transition on HEB mixers with various lengths and found them to be in excellent agreement with the results of the analytical and numerical models developed for the HEB mixer with both diffusion and phonon cooling of hot electrons. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 716 | ||
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| Author | Wei, Jian; Olaya, David; Karasik, Boris S.; Pereverzev, Sergey V.; Sergeev, Andrei V.; Gershenson, Michael E. | ||||
| Title |
Ultrasensitive hot-electron nanobolometers for terahertz astrophysics | Type | Journal Article | ||
| Year | 2008 | Publication | Nature Nanotechnology | Abbreviated Journal | Nature Nanotech |
| Volume | 3 | Issue | 8 | Pages | 496-500 |
| Keywords | HEB, Ti/NbN, single terahertz photons, detection | ||||
| Abstract | The submillimetre or terahertz region of the electromagnetic spectrum contains approximately half of the total luminosity of the Universe and 98% of all the photons emitted since the Big Bang. This radiation is strongly absorbed in the Earth's atmosphere, so space-based terahertz telescopes are crucial for exploring the evolution of the Universe. Thermal emission from the primary mirrors in these telescopes can be reduced below the level of the cosmic background by active cooling, which expands the range of faint objects that can be observed. However, it will also be necessary to develop bolometers – devices for measuring the energy of electromagnetic radiation—with sensitivities that are at least two orders of magnitude better than the present state of the art. To achieve this sensitivity without sacrificing operating speed, two conditions are required. First, the bolometer should be exceptionally well thermally isolated from the environment; second, its heat capacity should be sufficiently small. Here we demonstrate that these goals can be achieved by building a superconducting hot-electron nanobolometer. Its design eliminates the energy exchange between hot electrons and the leads by blocking electron outdiffusion and photon emission. The thermal conductance between hot electrons and the thermal bath, controlled by electron–phonon interactions, becomes very small at low temperatures (10-16 WK-1 at 40 mK). These devices, with a heat capacity of 10-19 J K-1, are sufficiently sensitive to detect single terahertz photons in submillimetre astronomy and other applications based on quantum calorimetry and photon counting. |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1748-3387 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 576 | |||
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| Author | Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. | ||||
| Title |
Ultrafast superconducting single-photon optical detectors and their applications | Type | Journal Article | ||
| Year | 2003 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
| Volume | 13 | Issue | 2 | Pages | 1151-1157 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications. | ||||
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| ISSN | 1051-8223 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 509 | |||
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| Author | Sobolewski, R.; Zhang, J.; Slysz, W.; Pearlman, A.; Verevkin, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Goltsman, G. N. | ||||
| Title |
Ultrafast superconducting single-photon optical detectors | Type | Conference Article | ||
| Year | 2003 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 5123 | Issue | Pages | 1-11 | |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography. | ||||
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| Corporate Author | Thesis | ||||
| Publisher | SPIE | Place of Publication | Editor | Spigulis, J.; Teteris, J.; Ozolinsh, M.; Lusis, A. | |
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | Advanced Optical Devices, Technologies, and Medical Applications | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1513 | |||
| Permanent link to this record | |||||
| Author | Gol'tsman, G. N.; Korneev, A.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Minaeva, O.; Smirnov, K.; Voronov, B.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. | ||||
| Title |
Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications | Type | Journal Article | ||
| Year | 2005 | Publication | Phys. Stat. Sol. (C) | Abbreviated Journal | Phys. Stat. Sol. (C) |
| Volume | 2 | Issue | 5 | Pages | 1480-1488 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We present our progress on the research and development of NbN superconducting single‐photon detectors (SSPD's) for ultrafast counting of near‐infrared photons for secure quantum communications. Our SSPD's operate in the quantum detection mode based on the photon‐induced hotspot formation and subsequent development of a transient resistive barrier across an ultrathin and submicron‐width superconducting stripe. The devices are fabricated from 4‐nm‐thick NbN films and kept in the 4.2‐ to 2‐K temperature range. The detector experimental quantum efficiency in the photon‐counting mode reaches above 40% for the visible light and up to 30% in the 1.3‐ to 1.55‐µm wavelength range with dark counts below 0.01 per second. The experimental real‐time counting rate is above 2 GHz and is limited by our readout electronics. The SSPD's timing jitter is below 18 ps, and the best‐measured value of the noise‐equivalent power (NEP) is 5 × 10–21 W/Hz1/2 at 1.3 µm. In terms of quantum efficiency, timing jitter, and maximum counting rate, our NbN SSPD's significantly outperform semiconductor avalanche photodiodes and photomultipliers in the 1.3‐ to 1.55‐µm range. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1610-1634 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1479 | |||
| Permanent link to this record | |||||
| Author | Verevkin, A.; Pearlman, A.; Slysz, W.; Zhang, J.; Currie, M.; Korneev, A.; Chulkova, G.; Okunev, O.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G. N.; Sobolewski, R. | ||||
| Title |
Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications | Type | Journal Article | ||
| Year | 2004 | Publication | J. Modern Opt. | Abbreviated Journal | J. Modern Opt. |
| Volume | 51 | Issue | 9-10 | Pages | 1447-1458 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | The paper reports progress on the design and development of niobium-nitride, superconducting single-photon detectors (SSPDs) for ultrafast counting of near-infrared photons for secure quantum communications. The SSPDs operate in the quantum detection mode, based on photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-width superconducting stripe. The devices are fabricated from 3.5 nm thick NbN films and kept at cryogenic (liquid helium) temperatures inside a cryostat. The detector experimental quantum efficiency in the photon-counting mode reaches above 20% in the visible radiation range and up to 10% at the 1.3–1.55 μn infrared range. The dark counts are below 0.01 per second. The measured real-time counting rate is above 2 GHz and is limited by readout electronics (the intrinsic response time is below 30 ps). The SSPD jitter is below 18 ps, and the best-measured value of the noise-equivalent power (NEP) is 2 × 10−18 W/Hz1/2. at 1.3 μm. In terms of photon-counting efficiency and speed, these NbN SSPDs significantly outperform semiconductor avalanche photodiodes and photomultipliers. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0950-0340 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1488 | |||
| Permanent link to this record | |||||
| Author | Verevkin, A. A.; Pearlman, A.; Slysz, W.; Zhang, J.; Sobolewski, R.; Chulkova, G.; Okunev, O.; Kouminov, P.; Drakinskij, V.; Smirnov, K.; Kaurova, N.; Voronov, B.; Gol’tsman, G.; Currie, M. | ||||
| Title |
Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications | Type | Conference Article | ||
| Year | 2003 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 5105 | Issue | Pages | 160-170 | |
| Keywords | NbN SSPD, SNSPD, applications, single-photon detector, quantum cryptography, quantum communications, superconducting devices | ||||
| Abstract | We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed. | ||||
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| Publisher | SPIE | Place of Publication | Editor | Donkor, E.; Pirich, A.R.; Brandt, H.E. | |
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | Quantum Information and Computation | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1514 | |||
| Permanent link to this record | |||||