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Author Title (up) Year Publication Volume Pages
Kooi, Jacob Willem Advanced receivers for submillimeter and far infrared astronomy 2008 University of Groningen
Billade, Bhushan; Belitsky, Victor; Pavolotsky, Alexey; Lapkin, Igor; Kooi, Jacob ALMA band 5 (163-211 GHz) sideband separation mixer 2009 Proc. 20th Int. Symp. Space Terahertz Technol. 19-23
Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes 2018 J. Phys.: Conf. Ser. 1124 051050 (1 to 5)
Karpov, A.; Miller, D.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. Broadband SIS mixer for 1 THz Band 2009 Proc. 20th Int. Symp. Space Terahertz Technol. 35-35
Li, Chao-Te; Chen, Tse-Jun; Ni, Tong-Liang; Lu, Wei-Chun; Chiu, Chuang-Ping; Chen, Chong-Wen; Chang, Yung-Chin; Wang, Ming-Jye Shi, Sheng-Cai Development of SIS mixers for SMA 400-520 GHz band 2009 Proc. 20th Int. Symp. Space Terahertz Technol. 24-30
Uzawa, Y.; Kojima, T.; Kroug, M.; Takeda, M.; Candotti, M.; Fujii, Y.; Shan, W.-L.; Kaneko, K.; Shitov, S.; Wang, M.-J. Development of the 787-950 GHz ALMA band 10 cartridge 2009 Proc. 20th Int. Symp. Space Terahertz Technol. 12-12
Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors 2018 Appl. Phys. Lett. 112 141101 (1 to 5)
Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. Electron heating in metallic resistors at sub-Kelvin temperature 2007 Phys. Rev. B 76 165426(1-9)
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate 1997 Phys. Rev. B 56 10089-10096
Ovchinnikov, Yu. N.; Varlamov, A. A. Fluctuation-dissipative phenomena in a narrow superconducting channel carrying current below critical 2009 arXiv 0910.2659v1 1-4
Dieleman, Piter Fundamental limitations of THz niobium and niobiumnitride SIS mixers 1998
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. Graphene-layer and graphene-nanoribbon FETs as THz detectors 2018 J. Phys.: Conf. Ser. 1124 051054
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation 2021 Adv. Electron. Mater. 7 2000872
Shitov, S. V.; Inatani, J.; Shan, W.-L.; Takeda, M; Wang, Z.; Uvarov, A. V.; Ermakov, A. B.; Uzawa, Y. Measurement of emissivity of the ALMA antenna panel at 840 GHz using NbN-based heterodyne SIS receiver 2008 Proc. 19th Int. Symp. Space Terahertz Technol. 263-266
Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. Noise equivalent temperature difference of a superconducting integrated terahertz receiver 2009 J. Commun. Technol. Electron. 54 716-720