| Records |
| Author |
Елезов, М. С.; Щербатенко, М. Л.; Сыч, Д. В.; Гольцман, Г. Н. |
Title  |
Практические особенности работы оптоволоконного квантового приемника Кеннеди |
Type |
Conference Article |
| Year |
2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
| Volume |
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Pages |
303-305 |
| Keywords |
Kennedy quantum receiver, fiber, quantum optics, standard quantum limit, superconducting nanowire single-photon detector, coherent detection |
| Abstract |
Мы рассматриваем практические особенности работы квантового приемника на основе схемы Кеннеди, собранного из стандартных оптоволоконных элементов и сверхпроводникового детектора одиночных фотонов. Приемник разработан для различения двух фазовомодулированных когерентных состояний света на длине волны 1,5 микрона в непрерывном режиме с частотой модуляции 200 КГц и уровнем ошибок различения примерно в два раза ниже стандартного квантового предела. |
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Russian |
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Duplicated as 1288 |
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1283 |
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Семенов, А. В.; Девятов, И. А.; Третьяков, И. В.; Лобанов, Ю. В.; Ожегов, Р. В.; Петренко, Д. В.; Селиверстов, С. В.; Финкель, М. И. |
| Title |
Вывод уравнения типа уравнения гинзбурга-ландау для нанопроволоки вблизи критического магнитного поля |
Type |
Journal Article |
| Year |
2011 |
Publication |
Журнал радиоэлектроники |
Abbreviated Journal |
Ж. радиоэлектроники |
| Volume |
11 |
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Pages |
4 |
| Keywords |
superconductivity; nanowire; Ginzburg-Landau equation |
| Abstract |
Nonlinear Ginzburg-Landau equation for dirty supercondicting 1D wire is derived in the limit of high magnetic field.
В пределе больших магнитных полей выведено нелинейное уравнение Гинзбурга-Ландау, описывающее состояние одномерной «грязной» нанопроволоки. |
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RPLAB @ gujma @ |
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714 |
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Rath, P.; Vetter, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Nebel, C.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. |
| Title |
Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps |
Type |
Conference Article |
| Year |
2016 |
Publication |
Integrated Optics: Devices, Mat. Technol. XX |
Abbreviated Journal |
Integrated Optics: Devices, Mat. Technol. XX |
| Volume |
9750 |
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135-142 |
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SSPD, Superconducting Nanowire Single-Photon Detector, SNSPD, Single Photon Detector, Diamond Photonics, Diamond Integrated Optics, Diamond Waveguides, Integrated Optics, Low Timing Jitter |
| Abstract |
We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps). |
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Spie |
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Broquin, J.-E.; Conti, G.N. |
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1210 |
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Bell, Matthew; Sergeev, Andrei; Goltsman, Gregory; Bird, Jonathan; Verevkin, Aleksandr |
| Title |
Transition-edge sensors based on superconducting nanowires |
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Abstract |
| Year |
2006 |
Publication |
Proc. APS March Meeting |
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Proc. APS March Meeting |
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Pages |
B38.00001 |
| Keywords |
NbN nanowire TES |
| Abstract |
We present our experimental study of superconducting NbN nanowire-based sensor. The responsivity of the sensor is strongly affected by the superconducting transition width of the nanostructure, which, in turn, is determined by the phase slip centers (PCSs) dynamics. The fluctuations and noise properties of the sensor are also discussed, as well as the devices' behavior at high magnetic fields. The ultimate performance of the sensor and prospects of the devices will be discussed, as well. |
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1455 |
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Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. |
| Title |
Superconductivity in highly disordered NbN nanowires |
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Journal Article |
| Year |
2016 |
Publication |
Nanotechnol. |
Abbreviated Journal |
Nanotechnol. |
| Volume |
27 |
Issue |
47 |
Pages |
47lt02 (1 to 8) |
| Keywords |
NbN nanowires |
| Abstract |
The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links. |
| Address |
National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia |
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English |
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0957-4484 |
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PMID:27782000 |
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1332 |
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