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| Author |
Tol, J. van; Brunel, L.-C.; Wylde, R. J. |
Title  |
A quasioptical transient electron spin resonance spectrometer operating at 120 and 240 GHz |
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Journal Article |
| Year |
2005 |
Publication |
Rev. Sci. Instrum. |
Abbreviated Journal |
Rev. Sci. Instrum. |
| Volume |
76 |
Issue |
7 |
Pages |
074101 (1 to 8) |
| Keywords |
Schottky, noise temperature |
| Abstract |
A new multifrequency quasioptical electron paramagnetic resonance (EPR) spectrometer is described. The superheterodyne design with Schottky diode mixer/detectors enables fast detection with subnanosecond time resolution. Optical access makes it suitable for transient EPR (TR-EPR) at 120 and 240 GHz. These high frequencies allow for an accurate determination of small g-tensor anisotropies as are encountered in excited triplet states of organic molecules like porphyrins and fullerenes. The measured concentration sensitivity for continuous-wave (cw) EPR at 240 GHz and at room temperature without cavity is 1013 spins/cm3 (15 nM) for a 1 mT linewidth and a 1 Hz bandwidth. With a Fabry-Perot cavity and a sample volume of 30 nl, the sensitivity at 240 GHz corresponds to [approximate]3×109 spins for a 1 mT linewidth. The spectrometer's performance is illustrated with applications of transient EPR of excited triplet states of organic molecules, as well as cw EPR of nitroxide reference systems and a thin film of a colossal magnetoresistance material. |
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Actually, noise spectral density is given (3e-19 W/Hz) |
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588 |
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| Author |
Kooi, Jacob Willem |
| Title |
Advanced receivers for submillimeter and far infrared astronomy |
Type |
Book Whole |
| Year |
2008 |
Publication |
University of Groningen |
Abbreviated Journal |
RUG |
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HEB, SIS, TES, NEP, noise temperature, IF bandwidth, waveguide, impedance, conversion gain, FTS, integrated array, stability, Allan variance, multi-layer antireflection coating |
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Doctoral thesis |
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978-90-367-3653-4 |
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881 |
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Billade, Bhushan; Belitsky, Victor; Pavolotsky, Alexey; Lapkin, Igor; Kooi, Jacob |
| Title |
ALMA band 5 (163-211 GHz) sideband separation mixer |
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Conference Article |
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2009 |
Publication |
Proc. 20th Int. Symp. Space Terahertz Technol. |
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19-23 |
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SIS mixer, noise temperature, ALMA, band 5 |
| Abstract |
We present the design of ALMA Band 5 sideband separation SIS mixer and experimental results for the double side band mixer and first measurement results 2SB mixer. In this mixer, the LO injection circuitry is integrated on the mixer substrate using a directional coupler, combining microstrip lines with slot-line branches in the ground plane. The isolated port of the LO coupler is terminated by wideband floating elliptical termination. The mixer employs two SIS junctions with junction area of 3 µm² each, in the twin junction configuration, followed by a quarter wave transformer to match the RF probe. 2SB mixer uses two identical but mirrored chips, whereas each DSB mixer has the same end-piece configuration. The 2S mixer has modular design such that DSB mixers are measured independently and then integrated into 2SB simply by placing around the middle piece. Measurements of the DSB mixer show noise temperature of around 40K over the entire band. 2SB mixer is not fully characterized yet, however, preliminary measurement indicates SSB (un-corrected) noise temperature of 80K. |
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616 |
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Karpov, A.; Miller, D.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. |
| Title |
Broadband SIS mixer for 1 THz Band |
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Conference Article |
| Year |
2009 |
Publication |
Proc. 20th Int. Symp. Space Terahertz Technol. |
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35-35 |
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SIS mixer, noise temperature |
| Abstract |
We report the development of a low noise and broadband SIS mixer aimed for 1 THz channel of the Caltech Airborne Submillimeter Interstellar Medium Investigations Receiver (CASIMIR), designed for the Stratospheric Observatory for Far Infrared Astronomy, (SOFIA). The mixer uses an array of 0.24 µm² Nb/Al-AlN/NbTiN SIS junctions with critical current density of 30-50 KA/cm². The junctions are shaped in order to optimize the suppression of the Josephson DC currents. We are using a double slot planar antenna to couple the mixer chip with the telescope beam. The RF matching microcircuit is made using Nb and gold films. The mixer IF circuit is designed to cover 4 – 8 GHz band. A test receiver with the new mixer has a low noise operation in a 0.87 – 1.12 THz band. The minimum DSB receiver noise measured at 1 THz is 260 K (Y=1.64), apparently the lowest reported up to date. The receiver noise corrected for the loss in the LO injection beam splitter and in the cryostat window is 200 K. The combination of a broad operation band of about 250 GHz with a low receiver noise is making the new mixer a useful element for application at SOFIA. We will discuss the prospective of a further improvement of the sensitivity and extension of the upper frequency of operation of SIS mixer. |
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614 |
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Jiang, L.; Antipov, S. V.; Voronov, B. M.; Gol'tsman, G. N.; Zhang, W.; Li, N.; Lin, Z. H.; Yao, Q. J.; Miao, W.; Shi, S. C.; Svechnikov, S. I.; Vakhtomin, Y. B. |
| Title |
Characterization of the performance of a quasi-optical NbN superconducting HEB mixer |
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Journal Article |
| Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
17 |
Issue |
2 |
Pages |
395-398 |
| Keywords |
NbN HEB mixers, noise temperature |
| Abstract |
In this paper we focus mainly on the investigation of the performance of a quasi-optical (planar log-spiral antenna) phonon-cooled NbN superconducting hot electron bolometer (HEB) mixer, which is cryogenically cooled by a close-cycled 4-K cryocooler, at 500 and 850 GHz frequency bands. The mixer's noise performance, stability of IF output power, and local oscillator (LO) power requirement are characterized for three NbN superconducting HEB devices of different sizes. The transmission characteristics of Mylar and Zitex films with incidence waves of an elliptical polarization are also examined by measuring the mixer's noise temperature. The lowest receiver noise temperatures (with no corrections) of 750 and 1100 K are measured at 500 and 850 GHz, respectively. Experimental results also demonstrate that the bigger the HEB device is, the higher the stability of IF output power becomes. |
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1051-8223 |
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1429 |
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