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Morozov, D. V., Smirnov, K. V., Smirnov, A. V., Lyakhov, V. A., & Goltsman, G. N. (2005). A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Semicond., 39(9), 1082–1086.
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Fedorov, G. E., Stepanova, T. S., Gazaliev, A. S., Gaiduchenko, I. A., Kaurova, N. S., Voronov, B. M., et al. (2016). Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection. Semicond., 50(12), 1600–1603.
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Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Goltsman, G. N., Verevkin, A. A., et al. (2011). Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements. Semicond. Sci. Technol., 26(2), 025013.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Goltsman, G. N., Gershenson, E. M., & Yngvesson, K. S. (1997). Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 55–58).
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Blagosklonskaya, L. E., Gershenzon, E. M., Gol’tsman, G. N., & Elant’ev, A. I. (1978). Effect of a strong magnetic field on the spectrum of donors in InSb. Sov. Phys. Semicond., 11(12), 1395–1397.
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Akhmadishina, K. F., Bobrinetskiy, I. I., Komarov, I. A., Malovichko, A. M., Nevolin, V. K., Fedorov, G. E., et al. (2015). Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers. Semicond., 49(13), 1749–1753.
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Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Gol’tsman, G. N., Verevkin, A. A., et al. (2010). Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons. Semicond., 44(11), 1427–1429.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol'tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1997). Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 163–166).
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Gershenzon, E. M., Goltsman, G. N., & Ptitsyna, N. G. (1974). Investigation of excited donor states in GaAs. Sov. Phys. Semicond., 7(10), 1248–1250.
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Bondarenko, O. I., Gershenzon, E. M., Gurvich, Y. A., Orlova, S. L., & Ptitsina, N. G. (1972). Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields. Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников, 6, 362–363.
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