| |
Records |
Links |
|
Author |
Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. |
|
| |
Title  |
Universal bottleneck for thermal relaxation in disordered metallic films |
Type |
Journal Article |
| |
Year |
2020 |
Publication |
JETP Lett. |
Abbreviated Journal |
Jetp Lett. |
|
| |
Volume |
111 |
Issue |
2 |
Pages |
104-108 |
|
| |
Keywords |
NbN disordered metallic films, thermal relaxation |
|
| |
Abstract |
We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0021-3640 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1164 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
|
| |
Title |
Transitions of electrons between excited states of donors in germanium |
Type |
Journal Article |
| |
Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
| |
Volume |
14 |
Issue |
2 |
Pages |
63-65 |
|
| |
Keywords |
Ge, donors, excited states |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1740 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Andreev, A. F. |
|
| |
Title |
The thermal conductivity of the intermediate state in superconductors |
Type |
Journal Article |
| |
Year |
1964 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
|
| |
Volume |
19 |
Issue |
5 |
Pages |
1228-1231 |
|
| |
Keywords |
superconductors, intermediate state, thermal conductivity |
|
| |
Abstract |
It is shown that, owing to over-the-barrier reflection of electron excitations at the boundary of the normal and superconducting phases, a temperature drop occurs when there is a flow of heat. The additional thermal resistance of a superconductor in the intermediate state is calculated. It is shown that it increases exponentially as the temperature is lowered and does not depend on the electron mean free path. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
MSPU @ s @ Andreev_reflection |
Serial |
216 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. |
|
| |
Title |
The excitonic Zeeman effect in uniaxially-strained germanium |
Type |
Journal Article |
| |
Year |
1987 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
|
| |
Volume |
65 |
Issue |
6 |
Pages |
1233-1241 |
|
| |
Keywords |
Ge, Zeeman effect |
|
| |
Abstract |
We have carried out a high-resolution spectroscopic study of the absorption of submillimeter radiation by free excitons in germanium compressed along the [ 1 11 ] axis in a magnetic field parallel to the compression axis. In particular, we studied the splitting of the 1s- 2p transition in fields up to 6 kOe at T = 1.6 K, and observed a complex pattern in the Zeeman splitting which we believe is related to the effect of thermal motion of the excitons in a magnetic field on their internal structure (the magneto-Stark effect). The calculated submillimeter spectrum of excitons agrees with the experimental data. We predict that in a magnetic field the energy of the 2p, term is a minimum at a finite value of the exciton momentum perpendicular to the field-that is, the energy minimum forms a ring in momentum space. It follows that the density of states for this term must be a nonmonotonic function of the energy. A theory is developed of analogous phenomena in positronium. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1705 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
|
| |
Title |
Submillimeter spectroscopy of semiconductors |
Type |
Journal Article |
| |
Year |
1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
|
| |
Volume |
37 |
Issue |
2 |
Pages |
299-304 |
|
| |
Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
|
| |
Abstract |
The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1735 |
|
| Permanent link to this record |
