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Проходцов, А. И., Голиков, А. Д., Ан, П. П., Ковалюк, В. В., & Гольцман, Г. Н. (2019). Влияние покрытия из оксида кремния на эффективность фокусирующего решеточного элемента связи из нитрида кремния. In Proc. IWQO (pp. 201–203).
Abstract: В работе экспериментально изучена зависимость эффективности фокусирующего решеточного элемента связи от периода и фактора заполнения до и после напыления верхнего слоя из оксида кремния. Полученные данные имеют практическое значение при создании перестраиваемых интегрально-оптических устройств на нитриде кремния.
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Bakhvalova, T., Belkin, M. E., Kovalyuk, V. V., Prokhodtcov, A. I., Goltsman, G. N., & Sigov, A. S. (2019). Studying key principles for design and fabrication of silicon photonic-based beamforming networks. In PIERS-Spring (pp. 745–751).
Abstract: In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array.
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Elmanova, A., An, P., Kovalyuk, V., Golikov, A., Elmanov, I., & Goltsman, G. (2020). Study of silicon nitride O-ring resonator for gas-sensing applications. In J. Phys.: Conf. Ser. (Vol. 1695, 012124).
Abstract: In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.
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Tretyakov, I., Shurakov, A., Perepelitsa, A., Kaurova, N., Svyatodukh, S., Zilberley, T., et al. (2019). Silicon room temperature IR detectors coated with Ag2S quantum dots. In Proc. IWQO (pp. 369–371).
Abstract: For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
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Mel’nikov, A. P., Gurvich, Y. A., Shestakov, L. N., & Gershenzon, E. M. (2001). Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon. Jetp Lett., 73(1), 44–47.
Abstract: The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
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