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Author Antipov, S. V.; Vachtomin, Yu. B.; Maslennikov, S. N.; Smirnov, K. V.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Goltsman, G. N.
Title (down) Noise performance of quasioptical ultrathin NbN hot electron bolometer mixer at 2.5 and 3.8 THz Type Conference Article
Year 2004 Publication Proc. 5-th MSMW Abbreviated Journal Proc. 5-th MSMW
Volume 2 Issue Pages 592-594
Keywords NbN HEB mixers
Abstract To put space-based and airborne heterodyne instruments into operation at frequencies above 1 THz the superconducting NbN hot-electron bolometer (HEB) will be incorporated into heterodyne receiver as a mixer. At frequencies above 1.3 THz the sensitivity of the NbN HEB mixers outperform the one of the Schottky diodes and SIS-mixers, and the receiver noise temperature of the NbN HEB mixers increase with frequency. In this paper we present the results of the noise temperature measurements within one batch of NbN HEB mixers based on 3.5 mn thick superconducting NbN film grown on Si substrate with MgO buffer layer at the LO frequencies 2.5 THz and 3.8 THz.
Address Kharkov, Ukraine
Corporate Author Thesis
Publisher Place of Publication Kharkov, Ukraine Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828)
Notes Approved no
Call Number Serial 351
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Author Zhang, Wen; Li, Ning; Jiang, Ling; Miao, Wei; Lin, Zhen-Hui; Yao, Qi-Jun; Shi, Sheng-Cai; Chen, Jian; Wu, Pei-Heng; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Gol'tsman, G. N.
Title (down) Noise behaviour of a THz superconducting hot-electron bolometer mixer Type Journal Article
Year 2007 Publication Chinese Phys. Lett. Abbreviated Journal Chinese Phys. Lett.
Volume 24 Issue 6 Pages 1778-1781
Keywords NbN HEB mixers
Abstract A quasi-optical superconducting NbN hot-electron bolometer (HEB) mixer is measured in the frequency range of 0.5–2.5 THz for understanding of the frequency dependence of noise temperature of THz coherent detectors. It has been found that noise temperature increasing with frequency is mainly due to the coupling loss between the quasi-optical planar antenna and the superconducting HEB bridge when taking account of non-uniform distribution of high-frequency current. With the coupling loss corrected, the superconducting HEB mixer demonstrates a noise temperature nearly independent of frequency.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0256-307X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1430
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Author Smirnov, K. V.; Vachtomin, Yu. B.; Antipov, S. V.; Maslennikov, S. N.; Kaurova, N. S.; Drakinsky, V. N.; Voronov, B. M.; Gol'tsman, G. N.; Semenov, A. D.; Richter, H.; Hubers, H.-W.
Title (down) Noise and gain performance of spiral antenna coupled HEB mixers at 0.7 THz and 2.5 THz Type Conference Article
Year 2003 Publication Proc. 14th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 14th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 405-412
Keywords NbN HEB mixers
Abstract Noise and gain performance of hot electron bolometer (HEB) mixers based on ultrathin superconducting NbN films integrated with a spiral antenna was studied. The noise temperature measurements for two samples with different active area of 3 p.m x 0.24 .tni and 1.3 1..tm x 0.12 1.tm were performed at frequencies 0.7 THz and 2.5 THz. The best receiver noise temperatures 370 K and 1600 K, respectively, have been found at these frequencies. The influence of contact resistance between the superconductor and the antenna terminals on the noise temperature of HEB is discussed. The noise and gain bandwidth of 5GHz and 4.2 GHz, respectively, are demonstrated for similar HEB mixer at 0.75 THz.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1502
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Author Maslennikov, S.; Vachtomin, Yu.; Antipov, S.; Smirnov, K.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G.
Title (down) NbN HEB mixers for frequencies of 2.5 and 3.8 THz Type Conference Article
Year 2004 Publication Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10) Abbreviated Journal
Volume Issue Pages
Keywords
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Moscow Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ s @ qoheb_vnksf10_2004 Serial 349
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Author Maslennikov, S.; Antipov, S.; Shishkov, A.; Svechnikov, S.; Voronov, B.; Smirnov, K.; Kaurova, N.; Drakinski, V.; Gol'tsman, G.
Title (down) NbN HEB mixer noise temperature measurements with hot/cold load mounted inside the helium cryostat at 300 GHz Type Conference Article
Year 2002 Publication Proc. Int. Student Seminar on Microwave Appl. of Novel Physical Phenomena supported by IEEE Abbreviated Journal
Volume Issue Pages
Keywords
Abstract
Address
Corporate Author Thesis
Publisher LETI Place of Publication St.-Petersburg Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 324
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Author Gol'tsman, G.; Maslennikov, S.; Finkel, M.; Antipov, S.; Kaurova, N.; Grishina, E.; Polyakov, S.; Vachtomin, Y.; Svechnikov, S.; Smirnov, K.; Voronov, B.
Title (down) Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer Type Conference Article
Year 2006 Publication Proc. MRS Abbreviated Journal Proc. MRS
Volume 935 Issue Pages 210 (1 to 6)
Keywords NbN HEB mixers
Abstract Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0272-9172 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1440
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Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G.
Title (down) Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer Type Journal Article
Year 2019 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 32 Issue 7 Pages 075003
Keywords NbN HEB mixer, GaN buffer layer, sapphire substrate
Abstract We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
Address
Corporate Author Thesis
Publisher IOP Publishing Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Antipov_2019 Serial 1277
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Author Cao, Aiqin; Jiang, L.; Chen, S.H.; Antipov, S.V.; Shi, S.C.
Title (down) IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer Type Conference Article
Year 2007 Publication Proc. International conference on microwave and millimeter wave technology Abbreviated Journal Proc. ICMMT
Volume Issue Pages 1-3
Keywords HEB, mixer, gain bandwidth
Abstract In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases.
Address
Corporate Author Thesis
Publisher Place of Publication Builin Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ lobanovyury @ Serial 575
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Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G.
Title (down) Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency Type Conference Article
Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 147-148
Keywords NbN HEB mixers, GaN buffer-layer, IF bandwidth
Abstract In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1175
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Author Nikoghosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V.
Title (down) Effect of absorption on the efficiency of THz radiation generation in a nonlinear crystal placed into a waveguide Type Journal Article
Year 2018 Publication Armenian J. Phys. Abbreviated Journal Armenian J. Phys.
Volume 11 Issue 4 Pages 257-262
Keywords THz, waveguide, nonlinear crystal
Abstract The effect of THz radiation absorption on the efficiency of generation of coherent THz radiation in a nonlinear optical crystal placed into a metal rectangular waveguide is studied. The efficiency of the nonlinear conversion of optical laser radiation to the THz band is also a function of the phase-matching (PM) condition inside the nonlinear crystal. The method of partial filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. Phase matching was obtained by the proper choice of the thickness of the nonlinear crystal, namely the degree of partial filling of the waveguide. We have studied the THz radiation attenuation caused by the losses in both the metal walls of the waveguide and in the crystal, taking into account the dimension of the cross section of the waveguide, the degree of partial filling and its dielectric constant.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1829-1171 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1291
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