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Author Zhang, J.; Verevkin, A.; Slysz, W.; Chulkova, G.; Korneev, A.; Lipatov, A.; Okunev, O.; Gol’tsman, G. N.; Sobolewski, Roman
Title (down) Time-resolved characterization of NbN superconducting single-photon optical detectors Type Conference Article
Year 2017 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 10313 Issue Pages 103130F (1 to 3)
Keywords NbN SSPD, SNSPD
Abstract NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest.
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Corporate Author Thesis
Publisher SPIE Place of Publication Editor Armitage, J. C.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada
Notes Downloaded from http://www2.ece.rochester.edu/projects/ufqp/PDF/2002/213NbNTimeOPTO_b.pdf This artcle was published in 2017 with only first author indicated (Zhang, J.). There were 8 more authors! Approved no
Call Number Serial 1750
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Author Hübers, H.-W.; Semenov, A.; Holldack, K.; Schade, U.; Wüstefeld, G.; Gol’tsman, G.
Title (down) Time domain analysis of coherent terahertz synchrotron radiation Type Journal Article
Year 2005 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 87 Issue 18 Pages 184103 (1 to 3)
Keywords NbN HEB mixers, applications
Abstract The time structure of coherent terahertz synchrotron radiation at the electron storage ring of the Berliner Elektronensynchrotron und Speicherring Gesellschaft has been analyzed with a fast superconducting hot-electron bolometer. The emission from a single bunch of electrons was found to last ∼1500ps at frequencies around 0.4THz, which is much longer than the length of an electron bunch in the time domain (∼5ps). It is suggested that this is caused by multiple reflections at the walls of the beam line. The quadratic increase of the power with the number of electrons in the bunch as predicted for coherent synchrotron radiation and the transition from stable to bursting radiation were determined from a single storage ring fill pattern of bunches with different populations.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1457
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Author Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N.
Title (down) Time delay of resistive-state formation in superconducting stripes excited by single optical photons Type Journal Article
Year 2003 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 67 Issue 13 Pages 132508 (1 to 4)
Keywords NbN SSPD, SNSPD
Abstract We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1519
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Author Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G.
Title (down) Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer Type Journal Article
Year 2018 Publication Microelectronic Engineering Abbreviated Journal Microelectronic Engineering
Volume 195 Issue Pages 26-31
Keywords
Abstract In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1155
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Author Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.
Title (down) Thermal boundary resistance at YBaCuO film-substrate interface Type Conference Article
Year 1993 Publication Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
Volume 112 Issue Pages 405-406
Keywords YBCO films
Abstract The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
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Corporate Author Thesis
Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.
Language Summary Language Original Title
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Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
Notes Approved no
Call Number Serial 1665
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Author Gol’tsman, G. N.
Title (down) The “Millimetron” project, a future space telescope mission Type Abstract
Year 2007 Publication Proc. 18th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 18th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 255
Keywords Millimetron space observatory, VLBI
Abstract The goal of the Millimetron project is to develop a space observatory operating in the millimeter, sub-millimeter and infrared wavelength ranges using a 12-m actively cooled telescope in a single-dish mode and as an interferometer with the space-ground and space-space baselines (the later after the launch of the second identical space telescope). The Millimetron’s main reflector and other optics will be cooled down to 4K thus enabling astronomical observations with super high sensitivity in MM and subMM (down to nanoJansky level). Heterodyne observations in an interferometer mode at frequencies 0.1-1 THz will provide super high angular resolution. The main instruments, planned to be installed are wide-range imaging arrays, radiometers with spectrometers and polarimeters, VLBI heterodyne receivers, and Mikelson type interferometer devices. Wide-range MM and subMM imaging arrays and spectrometers will be based on a superconducting hot electron direct detectors with Andreev mirrors operating at 0.1 K. Such detectors are the best candidates to reach the noise equivalent power level of 10 -19 -10 -20 W/√Hz. Heterodyne receivers will be both SIS based superconducting integrated receiver with flux-flow oscillator as LO (0.1-0.9 THz range) and HEB based receivers using multiplied Gunn oscillator as LO for 1-2 THz range and quantum cascade lasers as LO for 2-5 THz range. For observations in middle IR region there will be installed large arrays of superconducting single photon detectors, providing imaging with very high dynamic range and ultimate sensitivity.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference
Notes Approved no
Call Number Serial 1422
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Author Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N.
Title (down) The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer Type Journal Article
Year 2003 Publication J. of communications technol. & electronics Abbreviated Journal J. of communications technol. & electronics
Volume 48 Issue 6 Pages 671-675
Keywords NbN HEB mixers
Abstract Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Corporate Author Thesis
Publisher MAIK Nauka/Interperiodica, Birmingham, AL Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) Approved no
Call Number Vakhtomin2003 Serial 1522
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Author Kawamura, J.; Tong, C.-Y. E.; Blundell, R.; Papa, D. C.; Hunter, T. R.; Patt, F.; Gol’tsman, G.; Gershenzon, E.
Title (down) Terahertz-frequency waveguide NbN hot-electron bolometer mixer Type Journal Article
Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 11 Issue 1 Pages 952-954
Keywords NbN HEB mixers
Abstract We have developed a low-noise waveguide heterodyne receiver for operation near 1 THz using phonon-cooled NbN hot-electron bolometers. The mixer elements are submicron-sized microbridges of 4 nm-thick NbN film fabricated on a quartz substrate. Operating at a bath temperature of 4.2 K, the double-sideband receiver noise temperature is 760 K at 1.02 THz and 1100 K at 1.26 THz. The local oscillator is provided by solid-state sources, and power measured at the source is less than 1 /spl mu/W. The intermediate frequency bandwidth exceeds 2 GHz. The receiver was used to make the first ground-based heterodyne detection of a celestial spectroscopic line above 1 THz.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1546
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Author Gol’tsman, G. N.
Title (down) Terahertz technology in Russia Type Conference Article
Year 1994 Publication 24th European Microwave Conf. Abbreviated Journal 24th European Microwave Conf.
Volume 1 Issue Pages 113-121
Keywords BWO, HEB mixers
Abstract The presentation consider the parameters and operating peculiarities of unique microwave generators of the terahertz range which have been created in Russia – the backward wave oscillators – as well as certain devices based on these generators, such as high resolution. spectrometers and time-resolving spectrometers with picosecond temporal resolution. Most resent BWO-based studies are illustrated by a project devoted to superconductive hot-electron. bolometers which are of great independent value for the terahertz technology as high-sensitive picosecond detectors and low noise broad-band mixers.
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Area Expedition Conference 24th European Microwave Conference
Notes Approved no
Call Number Serial 1635
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Author Ozhegov, R. V.; Gorshkov, K. N.; Smirnov, K. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P.
Title (down) Terahertz imaging system based on superconducting integrated receiver Type Conference Article
Year 2010 Publication Proc. 2-nd Int. Conf. Terahertz and Microwave radiation: Generation, Detection and Applications Abbreviated Journal Proc. 2-nd Int. Conf. Terahertz and Microwave radiation: Generation, Detection and Applications
Volume Issue Pages 20-22
Keywords SIS mixer, SIR
Abstract The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Developing an array of SIRs would allow obtaining amplitude and phase characteristics of incident radiation in the plane of the receiver. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compare to traditional systems: i) high temperature resolution, comparable to the best results for incoherent receivers; ii) high spectral resolution allowing spectral analysis of various substances; iii) the local oscillator frequency can be varied to obtain images at different frequencies, effectively providing “color” images; iv) since a heterodyne receiver preserves the phase of the radiation, it is possible to construct 3D images. The paper presents a prototype THz imaging system using an 1 pixel SIR. We have studied the dependence of the noise equivalent temperature difference (NETD) on the integration time and also possible ways of achieving best possible sensitivity. An NETD of 13 mK was obtained with an integration time of 1 sec a detection bandwidth of 4 GHz at a local oscillator frequency of 520 GHz. An important advantage of an FFO is its wide operation range: 300-700 GHz.
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Notes Approved no
Call Number ozhegov2010terahertz Serial 1397
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