| Author |
Title  |
Year |
Publication |
Volume |
Pages |
| Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
| Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. |
Energy-loss rates for hot electrons and holes in GaAs quantum wells |
1985 |
Phys. Rev. Lett. |
54 |
2045-2048 |
| Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons |
2010 |
Semicond. |
44 |
1427-1429 |
| Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. |
Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes |
1985 |
Phys. B+C |
134 |
174-178 |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
163-166 |
| An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. |
Infrared phototransistor using capacitively coupled two-dimensional electron gas layers |
2005 |
Applied Physics Letters |
86 |
172106 - 172106-3 |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
1999 |
Semicond. |
33 |
551-554 |
| Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki |
Photoluminescence and energyâ€loss rates in GaAs quantum wells under highâ€density excitation |
1987 |
J. Appl. Phys. |
62 |
1010-1016 |
| Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. |
Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers |
2009 |
Applied Physics Letters |
95 |
3 |
| Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. |
Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs |
2010 |
Изв. РАН Сер. Физ. |
74 |
110-112 |
