Records |
Author |
Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Title |
Heating of quasiparticles in a superconducting film in the resistive state |
Type |
Journal Article |
Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
34 |
Issue |
5 |
Pages |
268-271 |
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Serial |
1716 |
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Author |
Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. |
Title |
Generation of nanosecond terahertz pulses by the optical rectification method |
Type |
Journal Article |
Year |
2012 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
96 |
Issue |
2 |
Pages |
94-97 |
Keywords |
optical rectification, lithium niobate crystal |
Abstract |
The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2. |
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0021-3640 |
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1377 |
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Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
18 |
Issue |
3 |
Pages |
93 |
Keywords |
Ge, free excitons, energy spectrum |
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1734 |
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Author |
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
Type |
Journal Article |
Year |
2000 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
71 |
Issue |
1 |
Pages |
31-34 |
Keywords |
2DEG, GaAs/AlGaAs heterostructures |
Abstract |
The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
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0021-3640 |
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http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
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no |
Call Number |
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Serial |
1559 |
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Author |
Gol’tsman, G. N.; Smirnov, K. V. |
Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
Type |
Journal Article |
Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
Volume |
74 |
Issue |
9 |
Pages |
474-479 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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Serial |
1541 |
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