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Yates, S. J. C., Baryshev, A. M., Baselmans, J. J. A., Klein, B., & Güsten, R. (2009). Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors. Appl. Phys. Lett., 95(4), 3.
Abstract: Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios.
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Stevens, M., Hadfield, R., Schwall, R., Nam, S. W., Mirin, R., & Gupta, J. (2006). Fast lifetime measurements of infrared emitters using a low-jitter superconduct- ing single-photon detector. Appl. Phys. Lett., 89, 031109.
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Hocker, L. O., Sokoloff, D. R., Daneu, V., Szoke, A., & Javan, A. (1968). Frequency mixing in the infrared and far-infrared using a metal-to-metal point contact diode. Appl Phys Lett, 12(12).
Abstract: Metalâ€toâ€metal point contact diodes were used to obtain the 54â€GHz beat notes between two adjacent 10.6â€μ CO2 laser transitions. The speed of the diodes in the farâ€infrared is at least 1000 GHz. This was tested with a 337â€μ HCN laser.
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Zwiller, V., Aichele, T., Seifert, W., Persson, J., & Benson, O. (2003). Generating visible single photons on demand with single InP quantum dots. Appl. Phys. Lett., 82(10), 1509–1511.
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An, Z., Chen, J. - C., Ueda, T., Komiyama, S., & Hirakawa, K. (2005). Infrared phototransistor using capacitively coupled two-dimensional electron gas layers. Appl. Phys. Lett., 86, 172106-3.
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Sekine, N., & Hosako, I. (2009). Intensity modulation of terahertz quantum cascade lasers under external light injection. Appl. Phys. Lett., 95, 201106(1–3).
Abstract: We investigated the light-current characteristics of terahertz (THz) quantum cascade lasers under external light injection, which excites interband transitions in the active materials. It was found that the amount of reduction in the THz power was constant for all injection currents above threshold, and the dependence of the reduction amount on the wavelength of the external light was observed to show a resonancelike feature. The dominant intensity modulation mechanism was found to be the loss change caused by interband transitions in the active region. Further, the effective coupling efficiency plays an important role in the intensity modulation.
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Walther, C., Scalari, G., Faist, J., Beere, H., & Ritchie, D. (2006). Low frequency terahertz quantum cascade laser operating from 1.6 to 1.8 THz. Appl. Phys. Lett., 89, 231121(1–3).
Abstract: The authors report a GaAs/Al0.1Ga0.9As quantum cascade laser based on a bound-to-continuum transition optimized for low frequency operation. High tunability of the gain curve is achieved by the Stark effect and laser emission is measured between 1.6 and 1.8 THz. Pulsed mode operation up to 95 K and continuous wave operation up to 80 K are reported. The dynamical range in current is as high as 43%.
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Dorenbos, S. N., Reiger, E. M., Perinetti, U., Zwiller, V., Zijlstra, T., & Klapwijk, T. M. (2008). Low noise superconducting single photon detectors on silicon. Appl. Phys. Lett., 93(13), 131101.
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Gaggero, A., Nejad, S. J., Marsili, F., Mattioli, F., Leoni, R., Bitauld, D., et al. (2010). Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl. Phys. Lett., 97(15), 3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Siddiqi, I., & Prober, D. E. (2004). Nb–Au bilayer hot-electron bolometers for low-noise THz heterodyne detection. Appl. Phys. Lett., 84(8), 1404.
Abstract: The sensitivity of present Nb diffusion-cooled hot-electron bolometer (HEB) mixers is not quantum limited, and can be improved by reducing the superconducting transition temperature TC. Lowering TC reduces thermal fluctuations, resulting in a decrease of the mixer noise temperature TM. However, lower TC mixers have reduced dynamic range and saturate more easily due to background noise. We present 30 GHz microwave measurements on a bilayer HEB system, Nb–Au, in which TC can be tuned with Au layer thickness to obtain the maximum sensitivity for a given noise background. These measurements are intended as a guide for the optimization of THz mixers. Using a Nb–Au mixer with TC = 1.6 K, we obtain TM = 50 K with 2 nW of local oscillator (LO) power. Good mixer performance is observed over a wide range of LO power and bias voltage and such a device should not exhibit saturation in a THz receiver.
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