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Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N. |
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Superconducting hot electron bolometer mixer for middle IR range |
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Conference Article |
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2006 |
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Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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2 |
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686-687 |
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IR NbN HEB mixer, detector, GaAs substrate |
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The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator. |
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4023440 |
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1297 |
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Kaurova, N. S.; Finkel, M. I.; Maslennikov, S. N.; Vahtomin, Yu. B.; Antipov, S. V.; Smirnov, K. V.; Voronov, B. M.; Gol'tsman, G. N.; Ilyin, K. S. |
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Submillimeter mixer based on YBa2Cu3O7-x thin film |
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Conference Article |
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2004 |
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Proc. 1-st conf. Fundamental problems of high temperature superconductivity |
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291 |
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HTS, HEB mixer |
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Moscow-Zvenigorod |
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Moscow-Zvenigorod |
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355 |
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Maslennikov, S. N.; Finkel, M. I.; Antipov, S. V.; Polyakov, S. L.; Zhang, W.; Ozhegov, R.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Korotetskaya, Yu. P.; Kaurova, N. S.; Gol'tsman, G. N.; Voronov, B. M. |
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Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz |
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Conference Article |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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177-179 |
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directly coupled NbN HEB mixers |
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We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz. |
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Paris, France |
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386 |
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Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. |
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Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation |
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2015 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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118 |
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19 |
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194303 |
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terahertz detectors, asymmetric carbon nanotubes, CNT |
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Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. |
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0021-8979 |
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1169 |
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Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G. |
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Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation |
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2014 |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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71 |
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carbon nanotubes, CNT |
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This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented. |
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