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Dieleman, Piter Fundamental limitations of THz niobium and niobiumnitride SIS mixers 1998 details   pdf openurl
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. Graphene-layer and graphene-nanoribbon FETs as THz detectors 2018 J. Phys.: Conf. Ser. 1124 051054 details   doi
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation 2021 Adv. Electron. Mater. 7 2000872 details   doi
Shitov, S. V.; Inatani, J.; Shan, W.-L.; Takeda, M; Wang, Z.; Uvarov, A. V.; Ermakov, A. B.; Uzawa, Y. Measurement of emissivity of the ALMA antenna panel at 840 GHz using NbN-based heterodyne SIS receiver 2008 Proc. 19th Int. Symp. Space Terahertz Technol. 263-266 details   openurl
Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. Noise equivalent temperature difference of a superconducting integrated terahertz receiver 2009 J. Commun. Technol. Electron. 54 716-720 details   doi
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