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Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Picosecond response of a superconducting hot-electron NbN photodetector |
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Journal Article |
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1998 |
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Appl. Supercond. |
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Appl. Supercond. |
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6 |
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7-9 |
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423-428 |
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NbN SSPD, SNSPD |
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The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W. |
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0964-1807 |
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1584 |
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Huang, Kevin C. Y.; Jun, Young Chul; Seo, Min-Kyo; Brongersma, Mark L. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Power flow from a dipole emitter near an optical antenna |
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Journal Article |
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2011 |
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Optics Express |
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Opt. Express |
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19 |
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20 |
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19084-19092 |
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optical antennas |
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Current methods to calculate the emission enhancement of a quantum emitter coupled to an optical antenna of arbitrary geometry rely on analyzing the total Poynting vector power flow out of the emitter or the dyadic Green functions from full-field numerical simulations. Unfortunately, these methods do not provide information regarding the nature of the dominant energy decay pathways. We present a new approach that allows for a rigorous separation, quantification, and visualization of the emitter output power flow captured by an antenna and the subsequent reradiation power flow to the far field. Such analysis reveals unprecedented details of the emitter/antenna coupling mechanisms and thus opens up new design strategies for strongly interacting emitter/antenna systems used in sensing, active plasmonics and metamaterials, and quantum optics. |
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RPLAB @ gujma @ |
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743 |
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Trifonov, A.; Tong, C.-Y. E.; Blundell, R.; Ryabchun, S.; Gol'tsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Probing the stability of HEB mixers with microwave injection |
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Journal Article |
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2015 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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2300404 (1 to 4) |
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NbN HEB mixer, stability, Allan-variance |
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Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%. |
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1051-8223 |
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Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
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1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3216-3219 |
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RSFQ, NbN, SIS |
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A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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1081 |
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Kim, Yong-Su; Lee, Jong-Chan; Kwon, Osung; Kim, Yoon-Ho |
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Protecting entanglement from decoherence using weak measurement and quantum measurement reversal |
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2012 |
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Nature Physics |
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Nat. Phys. |
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8 |
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2 |
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117-120 |
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fromIPMRAS |
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Decoherence, often caused by unavoidable coupling with the environment, leads to degradation of quantum coherence. For a multipartite quantum system, decoherence leads to degradation of entanglement and, in certain cases, entanglement sudden death. Tackling decoherence, thus, is a critical issue faced in quantum information, as entanglement is a vital resource for many quantum information applications including quantum computing, quantum cryptography, quantum teleportation and quantum metrology. Here, we propose and demonstrate a scheme to protect entanglement from decoherence. Our entanglement protection scheme makes use of the quantum measurement itself for actively battling against decoherence and it can effectively circumvent even entanglement sudden death. |
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RPLAB @ gujma @ |
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815 |
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Ma, Xiao-Song; Dakic, Borivoje; Naylor, William; Zeilinger, Anton; Walther, Philip |
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Quantum simulation of the wavefunction to probe frustrated Heisenberg spin systems |
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Journal Article |
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2011 |
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Nature Physics |
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Nat. Phys. |
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7 |
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5 |
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399-405 |
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fromIPMRAS |
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Quantum simulators are controllable quantum systems that can reproduce the dynamics of the system of interest in situations that are not amenable to classical computers. Recent developments in quantum technology enable the precise control of individual quantum particles as required for studying complex quantum systems. In particular, quantum simulators capable of simulating frustrated Heisenberg spin systems provide platforms for understanding exotic matter such as high-temperature superconductors. Here we report the analogue quantum simulation of the ground-state wavefunction to probe arbitrary Heisenberg-type interactions among four spin-1/2 particles. Depending on the interaction strength, frustration within the system emerges such that the ground state evolves from a localized to a resonating-valence-bond state. This spin-1/2 tetramer is created using the polarization states of four photons. The single-particle addressability and tunable measurement-induced interactions provide us with insights into entanglement dynamics among individual particles. We directly extract ground-state energies and pairwise quantum correlations to observe the monogamy of entanglement. |
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RPLAB @ gujma @ |
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842 |
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Zakka-Bajjani, Eva; Nguyen, François; Lee, Minhyea; Vale, Leila R.; Simmonds, Raymond W.; Aumentado, José |
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Quantum superposition of a single microwave photon in two different 'colour' states |
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Journal Article |
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2011 |
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Nature Physics |
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Nat. Phys. |
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7 |
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8 |
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599-603 |
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fromIPMRAS |
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Fully controlled coherent coupling of arbitrary harmonic oscillators is an important tool for processing quantum information. Coupling between quantum harmonic oscillators has previously been demonstrated in several physical systems using a two-level system as a mediating element. Direct interaction at the quantum level has only recently been realized by means of resonant coupling between trapped ions. Here we implement a tunable direct coupling between the microwave harmonics of a superconducting resonator by means of parametric frequency conversion. We accomplish this by coupling the mode currents of two harmonics through a superconducting quantum interference device (SQUID) and modulating its flux at the difference (~7GHz) of the harmonic frequencies. We deterministically prepare a single-photon Fock state and coherently manipulate it between multiple modes, effectively controlling it in a superposition of two different 'colours'. This parametric interaction can be described as a beamsplitter-like operation that couples different frequency modes. As such, it could be used to implement linear optical quantum computing protocols on-chip. |
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RPLAB @ gujma @ |
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822 |
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Arutyunov, K. Y.; Ramos-Álvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol’tsman, G. N. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Quasi-1-dimensional superconductivity in highly disordered NbN nanowires |
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Miscellaneous |
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2016 |
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arXiv |
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narrow NbN nanowires, BCS |
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The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the superconducting gap and the pairing potential. Here we report experimental study of electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. We find that conventional models based on phase slip concept provide reasonable fits for the shape of the R(T) transition curve. Temperature dependence of the critical current follows the text-book Ginzburg-Landau prediction for quasi-one-dimensional superconducting channel Ic~(1-T/Tc)^3/2. Hence, one may conclude that the intrinsic electronic inhomogeneity either does not exist in our structures, or, if exist, does not affect their resistive state properties. |
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Duplicated as 1332 |
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1338 |
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Darula, Marian; Semenov, Alex D.; Hübers, Heinz-Wilhelm; Schubert, Josef |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Quasioptical high-Tc superconductor Josephson mixer at terahertz frequencies |
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2000 |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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515 |
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HTS Josephson mixers |
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Mixers based on Josephson junctions from conventional superconductor materials have demonstrated excellent performance at subgap frequencies. The advantages of Josephson mixers are low optimal power of the local oscillator and large intermediate frequency bandwidth but their noise temperature increases dramatically at frequencies corresponding to the energy gap of the superconductor, which is typically below 1 THz for widely used materials. The large energy gap of oxide superconductors makes them promising candidates for development of terahertz Josephson mixers. Here we report on experimental study of the quasioptical mixer utilizing bicrystal Josephson junction from high-transition-temperature YBa 2 Cu 3 O 7-δ film. Junctions with a width of 2 µm were fabricated from 100 nm thick laser ablated films on bicrystal MgO substrates and had the and the J C R n product of about 2 mV at 4.2 K. The planar complementary logarithmic spiral antenna incorporated into co-planar waveguide was patterned from 200 nm thick gold film thermally evaporated in situ on top of the YBa 2 Cu 3 O 7-δ film. The mixer chip was clamped to the extended hemispherical silicon lens. Performance of the mixer was investigated at 4.5 K bath temperature. We used FIR laser as a local oscillator at frequencies 0.698 and 2.52 THz. System noise temperature (DSB) was determined from Y-factor measured with 300 K and 77 K loads. At 0.698 THz the lowest noise temperature 1750 K was observed when the mixer was biased with the fixed current to the region in the vicinity of either the first Shapiro step or the critical current. Between these two bias points the noise temperature increased to ≈ 20000 K. As function of the local oscillator power the noise temperature reached the minimum when the critical current was suppressed to the half of its equilibrium value. Power of the local oscillator absorbed by the mixer at optimal operation was of the order 100 nW. The present design of our antenna limits the upper operation frequency to the value of 1.8 THz. Nevertheless, we clearly observed Shapiro steps at the frequency 2.52 THz. Bearing in mind an improved design of the antenna, we estimate the 3000 K DSB noise temperature at this frequency. |
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Jang, Young Rae; Yoo, Keon-Ho; Park, Seung Min |
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Rapid thermal annealing of ZnO thin films grown at room temperature |
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2010 |
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J. Vac. Sci. Technol. A |
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28 |
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2 |
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4 |
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Annealing |
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The authors successfully obtained high quality ZnO thin films by growing them at room temperature (RT) and postannealing by rapid thermal annealing (RTA). The thin films were grown by pulsed laser deposition on Si (100) substrates at RT, and RTA was performed under various temperatures and ambient conditions. Based on the UV emission to visible emission ratio in RT photoluminescence (PL) spectra, the optimum film was obtained at annealing temperature ~700 °C in an ambient of Ar, N2, or O2 at 0.1 Torr, while the optimum annealing temperature was above 1100 °C in the air ambient at atmospheric pressure. The morphology and structure of the films in different RTA conditions were investigated by using field emission scanning electron microscopy and grazing incidence x-ray diffraction, and were discussed in conjunction with the PL data. |
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Annealing |
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RPLAB @ gujma @ |
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692 |
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