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Author Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N. url  doi
openurl 
  Title (up) Picosecond response of a superconducting hot-electron NbN photodetector Type Journal Article
  Year 1998 Publication Appl. Supercond. Abbreviated Journal Appl. Supercond.  
  Volume 6 Issue 7-9 Pages 423-428  
  Keywords NbN SSPD, SNSPD  
  Abstract The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W.  
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  Series Volume Series Issue Edition  
  ISSN 0964-1807 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1584  
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Author Huang, Kevin C. Y.; Jun, Young Chul; Seo, Min-Kyo; Brongersma, Mark L. openurl 
  Title (up) Power flow from a dipole emitter near an optical antenna Type Journal Article
  Year 2011 Publication Optics Express Abbreviated Journal Opt. Express  
  Volume 19 Issue 20 Pages 19084-19092  
  Keywords optical antennas  
  Abstract Current methods to calculate the emission enhancement of a quantum emitter coupled to an optical antenna of arbitrary geometry rely on analyzing the total Poynting vector power flow out of the emitter or the dyadic Green functions from full-field numerical simulations. Unfortunately, these methods do not provide information regarding the nature of the dominant energy decay pathways. We present a new approach that allows for a rigorous separation, quantification, and visualization of the emitter output power flow captured by an antenna and the subsequent reradiation power flow to the far field. Such analysis reveals unprecedented details of the emitter/antenna coupling mechanisms and thus opens up new design strategies for strongly interacting emitter/antenna systems used in sensing, active plasmonics and metamaterials, and quantum optics.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 743  
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Author Trifonov, A.; Tong, C.-Y. E.; Blundell, R.; Ryabchun, S.; Gol'tsman, G. url  doi
openurl 
  Title (up) Probing the stability of HEB mixers with microwave injection Type Journal Article
  Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 2300404 (1 to 4)  
  Keywords NbN HEB mixer, stability, Allan-variance  
  Abstract Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1355  
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Author Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. doi  openurl
  Title (up) Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ Type Journal Article
  Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 9 Issue 2 Pages 3216-3219  
  Keywords RSFQ, NbN, SIS  
  Abstract A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches).  
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  Notes Approved no  
  Call Number Serial 1081  
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Author Kim, Yong-Su; Lee, Jong-Chan; Kwon, Osung; Kim, Yoon-Ho openurl 
  Title (up) Protecting entanglement from decoherence using weak measurement and quantum measurement reversal Type Journal Article
  Year 2012 Publication Nature Physics Abbreviated Journal Nat. Phys.  
  Volume 8 Issue 2 Pages 117-120  
  Keywords fromIPMRAS  
  Abstract Decoherence, often caused by unavoidable coupling with the environment, leads to degradation of quantum coherence. For a multipartite quantum system, decoherence leads to degradation of entanglement and, in certain cases, entanglement sudden death. Tackling decoherence, thus, is a critical issue faced in quantum information, as entanglement is a vital resource for many quantum information applications including quantum computing, quantum cryptography, quantum teleportation and quantum metrology. Here, we propose and demonstrate a scheme to protect entanglement from decoherence. Our entanglement protection scheme makes use of the quantum measurement itself for actively battling against decoherence and it can effectively circumvent even entanglement sudden death.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 815  
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