| Records |
| Author |
Kenyon, M.; Day, P. K.; Bradford, C. M.; Bock, J. J.; Leduc, H. G. |
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Background-limited membrane-isolated TES bolometers for far-IR/submillimeter direct-detection spectroscopy |
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Journal Article |
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2006 |
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Nucl. Instr. & Meth. Phys. Res. A |
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559 |
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456-458 |
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RPLAB @ s @ TES_NEP_1e_19 |
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384 |
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Meledin, D.; Pantaleev, M.; Pavolotsky, A.; Risacher, C.; Belitsky, V.; Drakinskiy, V.; Cherednichenko, S. |
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Balanced waveguide HEB mixer for APEX 1.3 THz receiver |
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Conference Article |
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2005 |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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Göteborg, Sweden |
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RPLAB @ s @ wg_balanced |
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362 |
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Tovpeko, N. A.; Trifonov, A. V.; Semenov, A. V.; Antipov, S. V.; Kaurova, N. S.; Titova, N. A.; Goltsman, G. N. |
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Bandwidth performance of a THz normal metal TiN bolometer-mixer |
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Conference Article |
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2019 |
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Proc. 30th Int. Symp. Space Terahertz Technol. |
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Proc. 30th Int. Symp. Space Terahertz Technol. |
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102-103 |
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TiN normal metal bolometer, NMB |
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We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films. |
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1279 |
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Floet D. W.; Gao J. R.; Klapwijk T. M.; de Korte P. A. J. |
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Bias Dependence of the Thermal Time Constant in Nb Superconducting Diffusion-Cooled HEB Mixers |
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Journal Article |
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2000 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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77 |
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1719 |
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We present an experimental study of the intermediate frequency bandwidth of a Nb diffusion-cooled hot-electron bolometer mixer for different bias voltages. The measurements show that the bandwidth increases with increasing voltage. Analysis of the data reveals that this effect is mainly caused by a decrease of the intrinsic thermal time of the mixer and that the effect of electrothermal feedback through the intermediate frequency circuit is small. The results are understood using a qualitative model, which takes into account the different effective diffusion constants in the normal and superconducting domains. |
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RPLAB @ atomics90 @ |
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971 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
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Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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Journal Article |
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1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
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5 |
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185-186 |
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Ge, Si, neutral impurity atom, binding energy |
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