| Records |
| Author |
Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. |
Title  |
Superconductive properties of ultrathin NbN films on different substrates |
Type |
Journal Article |
| Year |
1994 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume |
7 |
Issue |
6 |
Pages |
1097-1102 |
| Keywords |
NbN films |
| Abstract |
A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz. |
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Russian |
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0131-5366 |
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| Notes |
Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках |
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1631 |
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| Author |
Gershenzon, E.M.; Gol'tsman, G.N.; Dzardanov, A.L.; Kuznetsov, E.A. |
| Title |
Superconducting UHF-limiter based on electron heating up |
Type |
Journal Article |
| Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume |
5 |
Issue |
11 |
Pages |
2164-2170 |
| Keywords |
electron heating, applications |
| Abstract |
The results of experimental investigation of fast-action 5HF-limiter are presented; the limiter is based on the utilization of electron hetaing phenomenon in thin superconducting films. The design of SHF-limiter, which is intended for operation at liquid helium temperatures and which has the form of a section of superconducting NbN microstrip line for 1-12 GHz rang, is described. |
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Russian |
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0235-8964 |
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1669 |
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| Author |
Goltsman, Gregory |
| Title |
Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors |
Type |
Conference Article |
| Year |
2017 |
Publication |
16th ISEC |
Abbreviated Journal |
16th ISEC |
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Pages |
Th-I-QTE-03 (1 to 3) |
| Keywords |
waveguide SSPD, SNSPD |
| Abstract |
We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chipquantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. |
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IEEE/CSC & ESAS Superconductivity News Forum |
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1745 |
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| Author |
Goltsman, G. |
| Title |
Superconducting thin film as infrared heterodyne and direct detectors |
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Conference Article |
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2017 |
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16th ISEC |
Abbreviated Journal |
16th ISEC |
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1-3 |
| Keywords |
optical waveguide SSPD, SNSPD |
| Abstract |
We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chip-quantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device. |
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8314188 |
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1323 |
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| Author |
Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Seleznev, V.; Morozov, P.; Smirnov, K. |
| Title |
Superconducting single-photon detectors made of ultra-thin VN films |
Type |
Conference Article |
| Year |
2018 |
Publication |
KnE Energy |
Abbreviated Journal |
KnE Energy |
| Volume |
3 |
Issue |
3 |
Pages |
83-89 |
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| Abstract |
We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I |
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1230 |
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