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Author Semenov, Alexei D; Gol'tsman, Gregory N; Sobolewski, Roman
Title (up) Hot-electron effect in superconductors and its applications for radiation sensors Type Journal Article
Year 2002 Publication Superconductor Science and Technology Abbreviated Journal Supercond. Sci. Technol.
Volume 15 Issue 4 Pages R1-R16
Keywords HEB, SSPD
Abstract The paper reviews the main aspects of nonequilibrium hot-electron phenomena in superconductors and various theoretical models developed to describe the hot-electron effect. We discuss implementation of the hot-electron avalanche mechanism in superconducting radiation sensors and present the most successful practical devices, such as terahertz mixers and direct intensity detectors, for far-infrared radiation. Our presentation also includes the novel approach to hot-electron quantum detection implemented in superconducting x-ray to optical photon counters.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 416
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Author Benz, A. O.; Bruderer, S.; van Dishoeck, E. F.; Stäuber, P.; Wampfler, S. F.; Melchior, M.; Dedes, C.; Wyrowski, F.; Doty, S. D.; van der Tak, F.; Bächtold, W.; Csillaghy, A.; Megej, A.; Monstein, C.; Soldati, M.; Bachiller, R.; Baudry, A.; Benedettini, M.; Bergin, E.; Bjerkeli, P.; Blake, G. A.; Bontemps, S.; Braine, J.; Caselli, P.; Cernicharo, J.; Codella, C.; Daniel, F.; di Giorgio, A. M.; Dieleman, P.; Dominik, C.; Encrenaz, P.; Fich, M.; Fuente, A.; Giannini, T.; Goicoechea, J. R.; de Graauw, Th.; Helmich, F.; Herczeg, G. J.; Herpin, F.; Hogerheijde, M. R.; Jacq, T.; Jellema, W.; Johnstone, D.; Jørgensen, J. K.; Kristensen, L. E.; Larsson, B.; Lis, D.; Liseau, R.; Marseille, M.; McCoey, C.; Melnick, G.; Neufeld, D.; Nisini, B.; Olberg, M.; Ossenkopf, V.; Parise, B.; Pearson, J. C.; Plume, R.; Risacher, C.; Santiago-García, J.; Saraceno, P.; Schieder, R.; Shipman, R.; Stutzki, J.; Tafalla, M.; Tielens, A. G. G. M.; van Kempen, T. A.; Visser, R.; Yıldız, U. A.
Title (up) Hydrides in young stellar objects: Radiation tracers in a protostar-disk-outflow system Type Journal Article
Year 2010 Publication Astron. Astrophys. Abbreviated Journal
Volume 521 Issue Pages L35 (1 to 5)
Keywords HEB mixer applications, HIFI, Herschel
Abstract Context. Hydrides of the most abundant heavier elements are fundamental molecules in cosmic chemistry. Some of them trace gas irradiated by UV or X-rays.

Aims. We explore the abundances of major hydrides in W3 IRS5, a prototypical region of high-mass star formation.

Methods. W3 IRS5 was observed by HIFI on the Herschel Space Observatory with deep integration (2500 s) in 8 spectral regions.

Results. The target lines including CH, NH, H3O+, and the new molecules SH+, H2O+, and OH+ are detected. The H2O+ and OH+ J = 1–0 lines are found mostly in absorption, but also appear to exhibit weak emission (P-Cyg-like). Emission requires high density, thus originates most likely near the protostar. This is corroborated by the absence of line shifts relative to the young stellar object (YSO). In addition, H2O+ and OH+ also contain strong absorption components at a velocity shifted relative to W3 IRS5, which are attributed to foreground clouds.

Conclusions. The molecular column densities derived from observations correlate well with the predictions of a model that assumes the main emission region is in outflow walls, heated and irradiated by protostellar UV radiation.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1082
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Author Cherednichenko, S.; Kroug, M.; Yagoubov, P.; Merkel, H.; Kollberg, E.; Yngvesson, K. S.; Voronov, B.; Gol’tsman, G.
Title (up) IF bandwidth of phonon cooled HEB mixers made from NbN films on MgO substrates Type Conference Article
Year 2000 Publication Proc. 11th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 11th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 219-227
Keywords NbN HEB mixers, cinversion gain bandwidth, IF bandwidth
Abstract An investigation of gain and noise bandwidth of phonon-cooled hot-electron bolometric (HEB) mixers is presented. The radiation coupling to the mixers is quasioptical through either a spiral or twin-slot antenna. A maximum gain bandwidth of 4.8 GHz is obtained for mixers based on a 3.5 nm thin NbN film with Tc= 10 K. The noise bandwidth is 5.6 GHz, at the moment limited by parasitic elements in the, device mount fixture. At 0.65 THz the DSB receiver noise temperature is 700-800 К in the IF band 1-2 GHz, and 1150-2700 К in the band 3.5-7 GHz.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1557
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Author Cao, Aiqin; Jiang, L.; Chen, S.H.; Antipov, S.V.; Shi, S.C.
Title (up) IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer Type Conference Article
Year 2007 Publication Proc. International conference on microwave and millimeter wave technology Abbreviated Journal Proc. ICMMT
Volume Issue Pages 1-3
Keywords HEB, mixer, gain bandwidth
Abstract In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases.
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Corporate Author Thesis
Publisher Place of Publication Builin Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ lobanovyury @ Serial 575
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Author Baubert, J.; Salez, M.; Merkel, H.; Pons, P.; Cherednichenko, S.; Lecomte, B.; Drakinsky, V.; Goltsman, G.; Leone, B.
Title (up) IF gain bandwidth of membrane-based NbN hot electron bolometers for SHAHIRA Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 15 Issue 2 Pages 507-510
Keywords NbN HEB mixers, applications
Abstract SHAHIRA (Submm Heterodyne Array for HIgh-speed Radio Astronomy) is a project supported by the European Space Agency (ESA) and is designed to fly on the SOFIA observatory. A quasi-optic design has been chosen for 2.5/2.7 THz and 4.7 THz, for hydroxyde radical OH, deuterated hydrogen HD and neutral atomic oxygen OI lines observations. Hot electron bolometers (HEBs) have been processed on 1 /spl mu/m thick SiO/sub 2//Si/sub 3/N/sub 4/ stress-less membranes. In this paper we analyse the intermediate frequency (IF) gain bandwidth from the theoretical point of view, and compare it to measurements.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1468
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Author Maslennikov, S. N.; Morozov, D. V.; Ozhegov, R. V.; Smirnov, K. V.; Okunev, O. V.; Gol’tsman, G. N.
Title (up) Imaging system for submillimeter wave range based on AlGaAs/GaAs hot electron bolometer mixers Type Conference Article
Year 2004 Publication Proc. 5-th MSMW Abbreviated Journal Proc. 5-th MSMW
Volume 2 Issue Pages 558-560
Keywords AlGaAs/GaAs HEB mixers
Abstract Electromagnetic radiation of the submillimeter (SMM) range is dispersed and absorbed significantly less than infrared (IR) radiation when passing through different objects. That is the reason for the development of an SMM imaging system. In this paper, we discuss the design of an SMM heterodyne imager, based on a matrix of AlGaAs/GaAs heterostructure hot electron bolometer mixers (HEB) with relatively high (about 77 K) operating temperature. The predicted double side band (DSB) noise temperature is about 1000 K and optimal local oscillator (LO) power is about 1 /spl mu/W for such mixers, which seems to be quite prospective for an SMM heterodyne imager.
Address Kharkov, Ukraine
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828)
Notes Approved no
Call Number Serial 1487
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Author Tretyakov, I.; Maslennikov, S.; Semenov, A.; Safir, O.; Finkel, M.; Ryabchun, S.; Kaurova, N.; Voronov, B.; Goltsman, G.; Klapwijk, T. M.
Title (up) Impact of operating conditions on noise and gain bandwidth of NbN HEB mixers Type Conference Article
Year 2015 Publication Proc. 26th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 26th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 39
Keywords NbN HEB mixers
Abstract Hot-electron bolometer mixers (HEB’s) are the most promising devices as mixing element for terahertz spectroscopy and astronomy at frequencies beyond 1.4 THz. They have a low noise temperature and low demands on local oscillator (LO) power. 1,2 An important limitation is the IF bandwidth, of the order of a few GHz, and which in principle depends on energy relaxation due to electron- phonon processes and on diffusion-cooling. It has been proposed by Prober that a reduction in length of the HEB would lead to an increased bandwidth. 3 This appeared to be achieved by Tretyakov et al by measuring the gain bandwidth close to the critical temperature of the NbN. 2 Unfortunately, the noise bandwidth of similar devices operated at temperatures around 4.2 K appear not depend on the length. The fundamental problem to be addressed is the position-dependent superconducting state of the HEB- devices under operating conditions, which determines the conditions for the cooling of the hot quasiparticles. Some progress has been made by Barends et al in a semi-empirical model to describe the I,V curves under operating conditions at a bath temperature around 4.2 K. 4 In more recent work Vercruyssen et al have analyzed the I,V curve, without any LO-equivalent bias, of a model NSN system. 5 This work suggests that the most appropriate model for an HEB under operating conditions is that of a potential-well in the superconducting gap in the center of the NbN, analogous the bimodal superconducting state described by Vercruyssen et al. Hot quasiparticles in the well can not diffuse out and can only cool by electron-phonon processes, those with higher energies than the heights of the walls of the well can diffuse out. Using this working hypothesis we have carried out experiments on a sub-micrometer NbN bridge connected to a gold (Au) planar spiral antenna. An in situ process is used to deposit Au on NbN. The Au is removed in the center to define the uncovered NbN, which will act as the superconducting mixer itself. The antenna is deposited on the remaining Au layer on the NbN. The Au contacts suppress the energy gap of the NbN film located underneath the gold layer 7,8 . The measured resistive transition is shown in Fig.1. It clearly shows a T c of the bilayer at 6.2 K and the resistive transition of the NbN itself around 9 K. In addition we show the measured noise bandwidth (red squares) for different bath temperatures. Clearly the noise bandwidth increases strongly by increasing the bath temperature from 5 K to 8 K, up to 13 GHz. We interpret this pattern as evidence for improved out-diffusion of hot electrons due to normal banks and a shallow superconducting potential well compared to k B T. As expected the noise temperature in this regime is much bigger than when biased at 4.2 K. R EFERENCES 1 W. Zhang, P. Khosropanah, J. R. Gao, E. L. Kollberg, K. S. Yngvesson, T. Bansal, R. Barends, and T. M. Klapwijk Appl. Phys. Lett. 96, 111113, (2010). 2 Ivan Tretyakov, Sergey Ryabchun, Matvey Finkel, Anna Maslennikova, Natalia Kaurova, Anastasia Lobastova, Boris Voronov, and Gregory Gol’tsman Appl. Phys. Lett. 98, 033507 (2011). 3 D. E. Prober, Appl. Phys. Lett. 62, 2119 (1992). 4 R. Barends, M. Hajenius, J. R. Gao, and T. M. Klapwijk, Appl. Phys. Lett. 87, 263506 (2005). 5 N. Vercruyssen, T. G. A. Verhagen, M. G. Flokstra, J. P. Pekola, and T. M. Klapwijk Physical Review B 85, 224503 (2012).
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1159
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Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G.
Title (up) Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer Type Journal Article
Year 2019 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 32 Issue 7 Pages 075003
Keywords NbN HEB mixer, GaN buffer layer, sapphire substrate
Abstract We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
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Corporate Author Thesis
Publisher IOP Publishing Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Antipov_2019 Serial 1277
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Author Gerecht, E.; Musante, C. F.; Jian, H.; Zhuang, Y.; Yngvesson, K. S.; Dickinson, J.; Goyette, T.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title (up) Improved characteristics of NbN HEB mixers integrated with log-periodic antennas Type Conference Article
Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 200-207
Keywords NbN HEB mixers
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1574
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Author Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G.
Title (up) Improved NbN phonon cooled hot electron bolometer mixers Type Conference Article
Year 2003 Publication Proc. 14th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 14th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 413-423
Keywords NbN HEB mixers
Abstract NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance to Au pads. By adding either a 5 nm Nb or a 10 nm NbTiN layer between the Au and NbN, to preserve superconductivity in the NbN under the Au contact pad, superior noise temperatures have been obtained. Using DC I,V curves and resistive transitions in combination with process parameters we analyze the nature of these improved devices and determine interface transparencies.
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Corporate Author Thesis
Publisher Place of Publication Tucson, USA Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 337
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