Cherednichenko, S., Kroug, M., Khosropanah, P., Adam, A., Merkel, H., Kolberg, E., et al. (2002). A broadband terahertz heterodyne receiver with an NbN HEB mixer. In Harward University (Ed.), Proc. 13th Int. Symp. Space Terahertz Technol. (pp. 85–95). Cambridge, MA, USA.
Abstract: We present a broadband and low noise heterodyne receiver for 1.4-1.7 THz designed for the Hershel Space Observatory. A phonon- cooled NbN HEB mixer was integrated with a normal metal double- slot antenna and an elliptical silicon lens. DSB receiver noise temperature Tr was measured from 1 GHz through 8GHz intermediate frequency band with 50 MHz instantaneous bandwidth. At 4.2 K bath temperature and at 1.6 THz LO frequency Tr is 800 K with the receiver noise bandwidth of 5 GHz. While at 2 K bath temperature Tr was as low as 700 K. At 0.6 THz and 1.1 THz a spiral antenna integrated NbN HEB mixer showed the receiver noise temperature 500 K and 800 K, though no antireflection coating was used in this case. Tr of 1100 K was achieved at 2.5 THz while the receiver noise bandwidth was 4 GHz.
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Tong, C. - Y. E., Meledin, D., Blundell, R., Erickson, N., Kawamura, J., Mehdi, I., et al. (2003). A 1.5 THz hot-electron bolometer mixer operated by a planar diode-based local oscillator. In Proc. 14th Int. Symp. Space Terahertz Technol. (286).
Abstract: We describe a 1.5 THz heterodyne receiver based on a superconductin g hot-electron bolometer mixer, which is pumped by an all-solid-state local oscillator chain. The bolometer is fabricated from a 3.5 nm-thick niobium nitride film deposited on a quartz substrate with a 200 nm-thick magnesium oxide buffer layer. The bolometer measures 0.15 fun in width and 1.5 1..tm in length. The chip consisting of the bolometer and mixer circuitry is incorporated in a fixed-tuned waveguide mixer block with a corru g ated feed horn. The local oscillator unit comprises of a cascade of four planar doublers followin g a MMIC-based W-band power amplifier. The local oscillator is coupled to the mixer using a Martin-Puplett interferometer. The local oscillator output power needed for optimal receiver performance is approximately 1 to 2 11W, and the chain is able to provide this power at a number of frequency points between 1.45 and 1.56 THz. By terminating the rf input with room temperature and 77 K loads, a Y-factor of 1.11 (DSB) has been measured at a local oscillator frequency of 1.476 THz at 3 GHz intermediate frequency.
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Tong, C. - Y. E., Meledin, D., Loudkov, D., Blundell, R., Erickson, N., Kawamura, J., et al. (2003). A 1.5 THz Hot-Electron Bolometer mixer operated by a planar diode based local oscillator. In IEEE MTT-S Int. Microwave Symp. Digest (Vol. 2, pp. 751–754).
Abstract: We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is operated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier. The threshold available pump power is estimated to be 1 /spl mu/W.
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Ekström, H., Karasik, B., Kollberg, E., Gol'tsman, G., & Gershenzon, E. (1995). 350 GHz NbN hot electron bolometer mixer. In Proc. 6th Int. Symp. Space Terahertz Technol. (pp. 269–283).
Abstract: Superconducting NbN hot-electron bolometer (HEB) mixer devices have been fabricated and measured at 350 GHz. The HEB is integrated with a double dipole antenna on an extended crystalline quartz hyper hemispherical substrate lens. Heterodyne measurement gave a -3 dB bandwidth, mainly determined by the electron- phonon interaction time, of about 680 and 1000 MHz for two different films with Tc = 8.5 and 11 K respectively. The measured DSB receiver noise temperature is around 3000 K at 800 MHz IF frequency. The main contribution to the output noise from the device is due to electron temperature fluctuations with the equivalent output noise temperature TFL-100 K. TH, has the same frequency dependence as the IF response. The contribution from Johnson noise is of the order of T. The RF coupling loss is estimated to be = 6 dB. The film with lower Tc, had an estimated intrinsic low-frequency conversion loss = 7 dB, while the other film had a conversion loss as high as 14 dB. The difference in intrinsic conversion loss is explained by less uniform absorption of radiation. Measurements of the small signal impedance shows a transition of the output impedance from the DC differential resistance Rd=dV/dI in the low frequency limit to the DC resistance R 0 =Uoff 0 in the bias point for frequencies above 3 GHz. We judge that the optimum shape of the IV-characteristic is more easily obtained at THz frequencies where the main restriction in performance should come from problems with the RF coupling.
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Svechnikov, S. I., Okunev, O. V., Yagoubov, P. A., Gol'tsman, G. N., Voronov, B. M., Cherednichenko, S. I., et al. (1997). 2.5 THz NbN hot electron mixer with integrated tapered slot antenna. IEEE Trans. Appl. Supercond., 7(2), 3548–3551.
Abstract: A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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