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| Author | Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. | ||||
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Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers | Type | Journal Article | ||
| Year | 2001 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 79 | Issue | 15 | Pages | 2483-2485 |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 311 | |||
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| Author | Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. | ||||
| Title |
Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers | Type | Journal Article | ||
| Year | 2004 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 84 | Issue | 11 | Pages | 1958-1960 |
| Keywords | NbN HEB mixers | ||||
| Abstract | We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz. |
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| Notes | Approved | no | |||
| Call Number | Serial | 352 | |||
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| Author | Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. | ||||
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Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors | Type | Journal Article | ||
| Year | 2018 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 112 | Issue | 14 | Pages | 141101 (1 to 5) |
| Keywords | graphene field effect transistors, FET | ||||
| Abstract | Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs. D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1309 | |||
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| Author | Mason, Whitney; Waterman, J. R. | ||||
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Electrical and optical characteristics of two color mid wave HgCdTe infrared detectors | Type | Journal Article | ||
| Year | 1999 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 74 | Issue | 11 | Pages | 1633-1635 |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ s @ | Serial | 461 | ||
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| Author | Marsili, Francesco; Najafi, Faraz; Herder, Charles; Berggren, Karl K. | ||||
| Title |
Electrothermal simulation of superconducting nanowire avalanche photodetectors | Type | Journal Article | ||
| Year | 2011 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 98 | Issue | 9 | Pages | 3 |
| Keywords | SNAP | ||||
| Abstract | We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 658 | ||
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| Author | Santavicca,D.F.; Reulet,B.; Karasik,B.S.; Pereverzev,S.V.; Olaya, D.; Gershenson, M.E.; Frunzio, L.; Prober, D.E. | ||||
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Energy resolution of terahertz single-photon-sensitive bolometric detectors | Type | Journal Article | ||
| Year | 2010 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 96 | Issue | 8 | Pages | 083505 - 083505-3 |
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| Abstract | We report measurements of the energy resolution of ultrasensitive superconducting bolometric detectors. The device is a superconducting titanium nanobridge with niobium contacts. A fast microwave pulse is used to simulate a single higher-frequency photon, where the absorbed energy of the pulse is equal to the photon energy. This technique allows precise calibration of the input coupling and avoids problems with unwanted background photons. Present devices have an intrinsic full-width at half-maximum energy resolution of approximately 23 THz, near the predicted value due to intrinsic thermal fluctuation noise. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ akorneev @ | Serial | 601 | ||
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| Author | Tanner, M. G.; Natarajan, C. M.; Pottapenjara, V. K.; O'Connor, J. A.; Warburton, R. J.; Hadfield, R. H.; Baek, B.; Nam, S.; Dorenbos, S. N.; Bermúdez Ureña, E.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V. | ||||
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Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon | Type | Journal Article | ||
| Year | 2010 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 96 | Issue | 22 | Pages | 3 |
| Keywords | SNSPD | ||||
| Abstract | Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 655 | ||
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| Author | Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. | ||||
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Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)] | Type | Journal Article | ||
| Year | 2010 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 96 | Issue | 8 | Pages | 089901 |
| Keywords | SSPD, SNSPD, erratum | ||||
| Abstract | A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered. | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1395 | |||
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| Author | Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. | ||||
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Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films | Type | Journal Article | ||
| Year | 1993 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 63 | Issue | 5 | Pages | 681-683 |
| Keywords | YBCO HTS detectors, nonequilibrium | ||||
| Abstract | The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons. | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1655 | |||
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| Author | Fetterman, H. R.; Tannenwald, P. E.; Clifton, B. J.; Parker, C. D.; Fitzgerald, W. D.; Erickson, N. R. | ||||
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Far-ir heterodyne radiometric measurements with quasioptical Schottky diode mixers | Type | Journal Article | ||
| Year | 1978 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 33 | Issue | 2 | Pages | 151-154 |
| Keywords | Schottky | ||||
| Abstract | Frequency countings close to a phase locked zone in an electronic receiver show a 1/f power spectral density. The noise scaling versus the frequency deviation and the open loop gain are found from Adler's model of the phase locked loop. This fully agrees with experiments performed at 5 MHz on a receiver with a Schottky diode mixer and a low pass filter. The 1/f amplitude and frequency noise due to the whole set of (sub)harmonics is explained from a nonlinear mapping, with a coupling coefficient related to the structure of prime numbers. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 587 | |||
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| Author | Yates, S. J. C.; Baryshev, A. M.; Baselmans, J. J. A.; Klein, B.; Güsten, R. | ||||
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Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors | Type | Journal Article | ||
| Year | 2009 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 95 | Issue | 4 | Pages | 3 |
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| Abstract | Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 697 | ||
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| Author | Stevens, M.; Hadfield, R.; Schwall, R.; Nam, S.W.; Mirin, R.; Gupta, J. | ||||
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Fast lifetime measurements of infrared emitters using a low-jitter superconduct- ing single-photon detector | Type | Journal Article | ||
| Year | 2006 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 89 | Issue | Pages | 031109 | |
| Keywords | SSPD, jitter, QD, QW | ||||
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| Call Number | RPLAB @ akorneev @ | Serial | 611 | ||
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| Author | Słysz, W.; Węgrzecki, M.; Bar, J.; Grabiec, P.; Górska, M.; Zwiller, V.; Latta, C.; Bohi, P.; Milostnaya, I.; Minaeva, O.; Antipov, A.; Okunev, O.; Korneev, A.; Smirnov, K.; Voronov, B.; Kaurova, N.; Gol’tsman, G.; Pearlman, A.; Cross, A.; Komissarov, I.; Verevkin, A.; Sobolewski, R. | ||||
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Fiber-coupled single-photon detectors based on NbN superconducting nanostructures for practical quantum cryptography and photon-correlation studies | Type | Journal Article | ||
| Year | 2006 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 88 | Issue | 26 | Pages | 261113 (1 to 3) |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We have fabricated and tested a two-channel single-photon detector system based on two fiber-coupled superconducting single-photon detectors (SSPDs). Our best device reached the system quantum efficiency of 0.3% in the 1540-nm telecommunication wavelength with a fiber-to-detector coupling factor of about 30%. The photoresponse consisted of 2.5-ns-wide voltage pulses with a rise time of 250ps and timing jitter below 40ps. The overall system response time, measured as a second-order, photon cross-correlation function, was below 400ps. Our SSPDs operate at 4.2K inside a liquid-helium Dewar, but their optical fiber inputs and electrical outputs are at room temperature. Our two-channel detector system should find applications in practical quantum cryptography and in antibunching-type quantum correlation measurements. The authors would like to thank Dr. Marc Currie for his assistance in early time-resolved photoresponse measurements and Professor Atac Imamoglu for his support. This work was supported by the Polish Ministry of Science under Project No. 3 T11B 052 26 (Warsaw), RFBR 03-02-17697 and INTAS 03-51-4145 grants (Moscow), CRDF Grant No. RE2-2531-MO-03 (Moscow), RE2-2529-MO-03 (Moscow and Rochester), and US AFOSR FA9550-04-1-0123 (Rochester). Additional funding was provided by the grants from the MIT Lincoln Laboratory and BBN Technologies Corp. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1449 | |||
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| Author | Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. | ||||
| Title |
Gain and noise bandwidth of NbN hot-electron bolometric mixers | Type | Journal Article | ||
| Year | 1997 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 70 | Issue | 24 | Pages | 3296-3298 |
| Keywords | NbN HEB mixers, conversion loss, conversion gain, U-factor technique | ||||
| Abstract | We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 279 | |||
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| Author | Zwiller, V.; Aichele, T.; Seifert, W.; Persson, J.; Benson, O. | ||||
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Generating visible single photons on demand with single InP quantum dots | Type | Journal Article | ||
| Year | 2003 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 82 | Issue | 10 | Pages | 1509-1511 |
| Keywords | single photon, quantum dot, InP | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 503 | |||
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