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Author An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K.
Title (up) Infrared phototransistor using capacitively coupled two-dimensional electron gas layers Type Journal Article
Year 2005 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 86 Issue Pages 172106 - 172106-3
Keywords 2DEG
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Call Number RPLAB @ akorneev @ Serial 603
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S.
Title (up) Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts Type Journal Article
Year 1999 Publication Semicond. Abbreviated Journal Semicond.
Volume 33 Issue 5 Pages 551-554
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.
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ISSN 1063-7826 ISBN Medium
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Call Number Serial 1571
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Author Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki
Title (up) Photoluminescence and energy‐loss rates in GaAs quantum wells under high‐density excitation Type Journal Article
Year 1987 Publication J. Appl. Phys. Abbreviated Journal
Volume 62 Issue 3 Pages 1010-1016
Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions
Abstract The time‐resolved luminescence spectra from excited conduction subbands in three samples of multi‐quantum‐well GaAs/AlxGa1-xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under high‐density excitations by a 30‐ps pulsed laser at 532 nm, which generated electron–hole pairs to the concentration of 1010–1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed time‐resolved spectrum to the observed, and the time‐dependent electron energy was obtained by using these parameters. The energy‐loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electron‐polar phonon scattering, including the screening effect due to the high carrier density.
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Call Number Serial 635
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Author Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X.
Title (up) Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers Type Journal Article
Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 95 Issue 19 Pages 3
Keywords 2DEG
Abstract The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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Call Number RPLAB @ gujma @ Serial 673
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Author Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И.
Title (up) Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs Type Journal Article
Year 2010 Publication Изв. РАН Сер. Физ. Abbreviated Journal Изв. РАН Сер. Физ.
Volume 74 Issue 1 Pages 110-112
Keywords 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth
Abstract Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) · 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием.
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Language Russian Summary Language Original Title
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Notes Duplicated as 1217 Approved no
Call Number RPLAB @ gujma @ Serial 642
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