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Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
Relaxation of the resistive superconducting state in boron-doped diamond films |
2016 |
Phys. Rev. B |
93 |
064506 |
|
|
Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
1999 |
IEEE Trans. Appl. Supercond. |
9 |
3216-3219 |
|
|
Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. |
Noise equivalent temperature difference of a superconducting integrated terahertz receiver |
2009 |
J. Commun. Technol. Electron. |
54 |
716-720 |
|
|
Shitov, S. V.; Inatani, J.; Shan, W.-L.; Takeda, M; Wang, Z.; Uvarov, A. V.; Ermakov, A. B.; Uzawa, Y. |
Measurement of emissivity of the ALMA antenna panel at 840 GHz using NbN-based heterodyne SIS receiver |
2008 |
Proc. 19th Int. Symp. Space Terahertz Technol. |
|
263-266 |
|
|
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. |
Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation |
2021 |
Adv. Electron. Mater. |
7 |
2000872 |
|
|
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
2018 |
J. Phys.: Conf. Ser. |
1124 |
051054 |
|
|
Dieleman, Piter |
Fundamental limitations of THz niobium and niobiumnitride SIS mixers |
1998 |
|
|
|
|
|
Ovchinnikov, Yu. N.; Varlamov, A. A. |
Fluctuation-dissipative phenomena in a narrow superconducting channel carrying current below critical |
2009 |
arXiv |
0910.2659v1 |
1-4 |
|
|
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
1997 |
Phys. Rev. B |
56 |
10089-10096 |
|
|
Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. |
Electron heating in metallic resistors at sub-Kelvin temperature |
2007 |
Phys. Rev. B |
76 |
165426(1-9) |
|
|
Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. |
Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors |
2018 |
Appl. Phys. Lett. |
112 |
141101 (1 to 5) |
|
|
Uzawa, Y.; Kojima, T.; Kroug, M.; Takeda, M.; Candotti, M.; Fujii, Y.; Shan, W.-L.; Kaneko, K.; Shitov, S.; Wang, M.-J. |
Development of the 787-950 GHz ALMA band 10 cartridge |
2009 |
Proc. 20th Int. Symp. Space Terahertz Technol. |
|
12-12 |
|
|
Li, Chao-Te; Chen, Tse-Jun; Ni, Tong-Liang; Lu, Wei-Chun; Chiu, Chuang-Ping; Chen, Chong-Wen; Chang, Yung-Chin; Wang, Ming-Jye Shi, Sheng-Cai |
Development of SIS mixers for SMA 400-520 GHz band |
2009 |
Proc. 20th Int. Symp. Space Terahertz Technol. |
|
24-30 |
|
|
Karpov, A.; Miller, D.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. |
Broadband SIS mixer for 1 THz Band |
2009 |
Proc. 20th Int. Symp. Space Terahertz Technol. |
|
35-35 |
|
|
Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
2018 |
J. Phys.: Conf. Ser. |
1124 |
051050 (1 to 5) |
|