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Author Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. url  doi
openurl 
  Title (up) Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy Type Journal Article
  Year 1994 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 49 Issue 15 Pages 10484-10494  
  Keywords Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy  
  Abstract Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.  
  Address  
  Corporate Author Thesis  
  Publisher American Physical Society Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1005  
Permanent link to this record
 

 
Author Bell, M.; Sergeev, A.; Mitin, V.; Bird, J.; Verevkin, A.; Gol’tsman, G. url  doi
openurl 
  Title (up) One-dimensional resistive states in quasi-two-dimensional superconductors: Experiment and theory Type Journal Article
  Year 2007 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 76 Issue 9 Pages 094521 (1 to 5)  
  Keywords uasi-two-dimensional superconductors, NbN  
  Abstract We investigate competition between one- and two-dimensional topological excitations—phase slips and vortices—in the formation of resistive states in quasi-two-dimensional superconductors in a wide temperature range below the mean-field transition temperature TC0. The widths w=100nm of our ultrathin NbN samples are substantially larger than the Ginzburg-Landau coherence length ξ=4nm, and the fluctuation resistivity above TC0 has a two-dimensional character. However, our data show that the resistivity below TC0 is produced by one-dimensional excitations—thermally activated phase slip strips (PSSs) overlapping the sample cross section. We also determine the scaling phase diagram, which shows that even in wider samples the PSS contribution dominates over vortices in a substantial region of current and/or temperature variations. Measuring the resistivity within 7 orders of magnitude, we find that the quantum phase slips can only be essential below this level.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1423  
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Author Smolyaninov, I. I.; Zayats, A. V.; Stanishevsky, A.; Davis, C. C. url  doi
openurl 
  Title (up) Optical control of photon tunneling through an array of nanometer-scale cylindrical channels Type Journal Article
  Year 2002 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 66 Issue 20 Pages 205414_1-205414_5  
  Keywords optical mixing  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 499  
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Author Kozorezov, A. G.; Lambert, C.; Marsili, F.; Stevens, M. J.; Verma, V. B.; Stern, J. A.; Horansky, R.; Dyer, S.; Duff, S.; Pappas, D. P.; Lita, A.; Shaw, M. D.; Mirin, R. P.; Sae Woo Nam doi  openurl
  Title (up) Quasiparticle recombination in hotspots in superconducting current-carrying nanowires Type Journal Article
  Year 2015 Publication Abbreviated Journal Phys. Rev. B  
  Volume 92 Issue 6 Pages  
  Keywords  
  Abstract We describe a kinetic model of recombination of non-equilibrium quasiparticles generated by single photon absorption in superconducting current-carrying nanowires. The model is developed to interpret two-photon detection experiments in which a single photon does not possess sufficient energy for breaking superconductivity at a fixed low bias current. We show that quasiparticle self- recombination in relaxing hotspot dominates diffusion expansion effects and explains the observed strong bias current, wavelength and temperature dependencies of hotspot relaxation in tungsten silicide superconducting nanowire single-photon detectors.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ alex_kazakov @ Serial 1003  
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Author Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. url  doi
openurl 
  Title (up) Relaxation of the resistive superconducting state in boron-doped diamond films Type Journal Article
  Year 2016 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 93 Issue 6 Pages 064506  
  Keywords boron-doped diamond films, resistive superconducting state, relaxation time  
  Abstract We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2469-9950 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1167  
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