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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. |
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Title  |
Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes |
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Journal Article |
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Year |
2007 |
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J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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Volume |
101 |
Issue |
12 |
Pages |
124508 (1 to 6) |
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Keywords |
HEB, mixer, membrane |
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Abstract |
The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach. |
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0021-8979 |
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560 |
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Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. |
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Title |
Gain and noise bandwidth of NbN hot-electron bolometric mixers |
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Journal Article |
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Year |
1997 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
70 |
Issue |
24 |
Pages |
3296-3298 |
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Keywords |
NbN HEB mixers, conversion loss, conversion gain, U-factor technique |
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Abstract |
We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K. |
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279 |
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Khasminskaya, S.; Pyatkov, F.; Słowik, K.; Ferrari, S.; Kahl, O.; Kovalyuk, V.; Rath, P.; Vetter, A.; Hennrich, F.; Kappes, M. M.; Gol'tsman, G.; Korneev, A.; Rockstuhl, C.; Krupke, R.; Pernice, W. H. P. |
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Title |
Fully integrated quantum photonic circuit with an electrically driven light source |
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Journal Article |
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2016 |
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Nat. Photon. |
Abbreviated Journal |
Nat. Photon. |
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10 |
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11 |
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727-732 |
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Carbon nanotubes and fullerenes, Integrated optics, Single photons and quantum effects, Waveguide integrated single-photon detector |
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Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices. |
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RPLAB @ kovalyuk @ |
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1105 |
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Author |
Semenov, A. D.; Hübers, H.–W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer |
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Conference Article |
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Year |
2000 |
Publication |
Proc. 11th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 11th Int. Symp. Space Terahertz Technol. |
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39-48 |
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Keywords |
NbN HEB mixers |
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We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens. |
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305 |
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Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Minaeva, O.; Kaurova, N.; Divochiy, A.; Korneev, A.; Tarkhov, M.; Voronov, B.; Milostnaya, I.; Gol'tsman, G.; Sobolewski, R. |
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Title |
Fluctuations in two-dimensional superconducting NbN nanobridges and nanostructures meanders |
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2007 |
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Proc. APS March Meeting |
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Proc. APS March Meeting |
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52 |
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1 |
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L9.00013 |
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We have observed fluctuations, manifested as sub-nanosecond to nanosecond transient, millivolt-amplitude voltage pulses, generated in two-dimensional NbN nanobridges, as well as in extended superconducting meander nanostructures, designed for single photon counting. Both nanobridges and nano-stripe meanders were biased at currents close to the critical current and measured in a range of temperatures from 1.5 to 8 K. During the tests, the devices were blocked from all incoming radiation by a metallic enclosure and shielded from any external magnetic fields. We attribute the observed spontaneous voltage pulses to the Kosterlitz-Thouless-type fluctuations, where the high enough applied bias current reduces the binding energy of vortex-antivortex pairs and, subsequently, thermal fluctuations break them apart causing the order parameter to momentarily reduce to zero, which in turn causes a transient voltage pulse. The duration of the voltage pulses depended on the device geometry (with the high-kinetic inductance meander structures having longer, nanosecond, pulses) while their rate was directly related to the biasing current as well as temperature. |
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1027 |
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Author |
Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M. |
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Fast NbN superconducting switch controlled by optical radiation |
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Journal Article |
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1997 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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7 |
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2 |
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3734-3737 |
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NbN superconducting switch |
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The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits. |
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1051-8223 |
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1596 |
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Casaburi, A.; Ejrnaes, M.; Quaranta, O.; Gaggero, A.; Mattioli, F.; Leoni, R.; Voronov, B.; Gol'tsman, G.; Lisitskiy, M.; Esposito, E.; Nappi, C.; Cristiano, R.; Pagano, S. |
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Experimental characterization of NbN nanowire optical detectors with parallel stripline configuration |
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Conference Article |
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2008 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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97 |
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012265 (1 to 6) |
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NbN SSPD, SNSPD |
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We have developed a novel geometrical configuration for NbN-based superconducting single photon optical detector (SSPD) that achieves two goals: a much lower intrinsic impedance, and a consequently greater bandwidth, and a much larger signal amplitude compared to the standard meandered configuration. This has been obtained by implementing a properly designed parallel stripline structure where a cascade switching mechanism occurs when one of the striplines is hit by an optical photon. The overall switching occurs synchronously and in a very short time, giving rise to a strong and fast voltage pulse. The SSPD have been realized using state of the art NbN deposition technology and e-beam lithography. The strips are 100 nm wide and 5 μm long and have been realized with 4 nm NbN film on sapphire and Si substrate. We report on experimental characterization of such novel devices. The performances of the proposed novel type of SSPD are compared with standard SSPD design and results in terms of signal amplitude, risetime and effective detection area. |
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IOP Publishing |
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1742-6596 |
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8th European Conference on Applied Superconductivity (EUCAS 2007) |
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1416 |
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Beck, M.; Klammer, M.; Lang, S.; Leiderer, P.; Kabanov, V. V.; Gol'tsman, G. N.; Demsar, J. |
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Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy |
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2011 |
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Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
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Volume |
107 |
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17 |
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4 |
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NbN thin film, energy gap dynamics |
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Using time-domain terahertz spectroscopy we performed direct studies of the photoinduced suppression and recovery of the superconducting gap in a conventional BCS superconductor NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the bare quasiparticle recombination rate, the Cooper pair-breaking rate and the electron-phonon coupling constant, λ=1.1±0.1, which is in excellent agreement with theoretical estimates. |
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RPLAB @ gujma @ |
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641 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Title |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
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1977 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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45 |
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3 |
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555-565 |
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Ge, GaAs, magnetic field, donors, energy spectrum |
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The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. |
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1728 |
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Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
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Energy spectrum of free excitons in germanium |
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1973 |
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JETP Lett. |
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JETP Lett. |
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18 |
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3 |
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93 |
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Ge, free excitons, energy spectrum |
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