|   | 
Details
   web
Records
Author Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
Title (up) Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field Type Journal Article
Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 45 Issue 3 Pages 555-565
Keywords Ge, GaAs, magnetic field, donors, energy spectrum
Abstract The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1728
Permanent link to this record
 

 
Author Beck, Matthias; Leiderer, Paul; Kabanov, Viktor V.; Gol'tsman, Gregory; Helm, Manfred; Demsar, Jure
Title (up) Energy-gap dynamics of a superconductor NbN studied by time-resolved terahertz spectroscopy Type Abstract
Year 2012 Publication INIS Abbreviated Journal INIS
Volume 45 Issue 12 Pages 1-3
Keywords NbN energy gap
Abstract Using time-resolved terahertz (THz) spectroscopy we performed direct studies of the photoinduced suppression and recovery of the SC gap in a conventional SC NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the important microscopic constants: the Cooper pair-breaking rate via phonon absorption and the bare quasiparticle recombination rate. From the latter we were able to extract the dimensionless electron-phonon coupling constant, λ=1.1±0.1, in excellent agreement with theoretical estimates. The technique also allowed us to determine the absorbed energy required to suppress SC, which in NbN equals the thermodynamic condensation energy (in cuprates the two differ by an order of magnitude). Finally, we present the first studies of dynamics following resonant excitation with intense narrow band THz pulses tuned to above and below the superconducting gap. These suggest an additional process, particularly pronounced near Tc, that could be attributed to amplification of SC via effective quasiparticle cooling.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1383
Permanent link to this record
 

 
Author Beck, M.; Klammer, M.; Lang, S.; Leiderer, P.; Kabanov, V. V.; Gol'tsman, G. N.; Demsar, J.
Title (up) Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy Type Journal Article
Year 2011 Publication Phys. Rev. Lett. Abbreviated Journal Phys. Rev. Lett.
Volume 107 Issue 17 Pages 4
Keywords NbN thin film, energy gap dynamics
Abstract Using time-domain terahertz spectroscopy we performed direct studies of the photoinduced suppression and recovery of the superconducting gap in a conventional BCS superconductor NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the bare quasiparticle recombination rate, the Cooper pair-breaking rate and the electron-phonon coupling constant, λ=1.1±0.1, which is in excellent agreement with theoretical estimates.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ gujma @ Serial 641
Permanent link to this record
 

 
Author Beck, M.; Klammer, M.; Lang, S.; Leiderer, P.; Kabanov, V. V.; Gol’tsman, G. N.; Demsar, J.
Title (up) Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy Type Miscellaneous
Year 2011 Publication arXiv Abbreviated Journal
Volume Issue Pages
Keywords NbN thin film, energy gap dynamics
Abstract Using time-domain Terahertz spectroscopy we performed direct studies of the photoinduced suppression and recovery of the superconducting gap in a conventional BCS superconductor NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the bare quasiparticle recombination rate, the Cooper pair-breaking rate and the electron-phonon coupling constant, \lambda = 1.1 +/- 0.1, which is in excellent agreement with theoretical estimates.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Duplicated as 641 Approved no
Call Number Serial 1388
Permanent link to this record
 

 
Author Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W.
Title (up) Energy-loss rates for hot electrons and holes in GaAs quantum wells Type Journal Article
Year 1985 Publication Phys. Rev. Lett. Abbreviated Journal Phys. Rev. Lett.
Volume 54 Issue Pages 2045-2048
Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions
Abstract We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 633
Permanent link to this record