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Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
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Title  |
Electron energy relaxation in disordered superconducting NbN films |
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Journal Article |
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2020 |
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Phys. Rev. B |
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Phys. Rev. B |
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102 |
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5 |
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054501 (1 to 15) |
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NbN SSPD, SNSPD, HEB, bandwidth, relaxation time |
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We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material. |
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1266 |
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Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Goltsman, G. N. |
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Fabrication and characterisation of NbN HEB mixers with in situ gold contacts |
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Conference Article |
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2008 |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
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62-67 |
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HEB, mixer, NbN, in-situ contacts |
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We present our recent results of the fabrication and testing of NbN hot-electron bolometer mixers with in situ gold contacts. An intermediate frequency bandwidth of about 6 GHz has been measured for the mixers made of a 3.5-nm NbN film on a plane Si substrate with in situ gold contacts, compared to 3.5 GHz for devices made of the same film with ex situ gold contacts. The increase in the intermediate frequency bandwidth is attributed to additional diffusion cooling through the improved contacts, which is further supported by the its dependence on the bridge length: intermediate frequency bandwidths of 3.5 GHz and 6 GHz have been measured for devices with lengths of 0.35 μm and 0.16 μm respectively at a local oscillator frequency of 300 GHz near the superconducting transition. At a local oscillator frequency of 2.5 THz the receiver has offered a DSB noise temperature of 950 K. When compared to the previous result of 1300 K obtained at the same local oscillator frequency for devices fabricated with an ex situ route, such a low value of the noise temperature may also be attributed to the improved gold contacts. |
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Groningen, Netherlands |
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Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R. |
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Fabrication of nanostructured superconducting single-photon detectors |
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2003 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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13 |
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2 |
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192-195 |
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NbN SSPD, SNSPD |
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Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed. |
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1558-2515 |
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1515 |
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Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G. |
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Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer |
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2015 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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2300304 |
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HEB detector responsivity, HEB model, numerical calculations, numerical model |
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We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter. |
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953 |
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Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gorska, M.; Rieger, E.; Dorenbos, P.; Zwiller, V.; Milostnaya, I.; Minaeva, O.; Antipov, A.; Okunev, O.; Korneev, A.; Smirnov, K.; Voronov, B.; Kaurova, N.; Gol’tsman, G.N.; Kitaygorsky, J.; Pan, D.; Pearlman, A.; Cross, A.; Komissarov, I.; Sobolewski, R. |
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Fiber-coupled NbN superconducting single-photon detectors for quantum correlation measurements |
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Conference Article |
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2007 |
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Proc. SPIE |
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Proc. SPIE |
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6583 |
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65830J (1 to 11) |
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NbN SSPD, SNSPD, superconducting single-photon detectors, single-photon detectors, fiber-coupled optical detectors, quantum correlations, superconducting devices |
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We have fabricated fiber-coupled superconducting single-photon detectors (SSPDs), designed for quantum-correlationtype experiments. The SSPDs are nanostructured ( 100-nm wide and 4-nm thick) NbN superconducting meandering stripes, operated in the 2 to 4.2 K temperature range, and known for ultrafast and efficient detection of visible to nearinfrared photons with almost negligible dark counts. Our latest devices are pigtailed structures with coupling between the SSPD structure and a single-mode optical fiber achieved using a micromechanical photoresist ring placed directly over the meander. The above arrangement withstands repetitive thermal cycling between liquid helium and room temperature, and we can reach the coupling efficiency of up to 33%. The system quantum efficiency, measured as the ratio of the photons counted by SSPD to the total number of photons coupled into the fiber, in our early devices was found to be around 0.3 % and 1% for 1.55 &mgr;m and 0.9 &mgr;m photon wavelengths, respectively. The photon counting rate exceeded 250 MHz. The receiver with two SSPDs, each individually biased, was placed inside a transport, 60-liter liquid helium Dewar, assuring uninterrupted operation for over 2 months. Since the receiver’s optical and electrical connections are at room temperature, the set-up is suitable for any applications, where single-photon counting capability and fast count rates are desired. In our case, it was implemented for photon correlation experiments. The receiver response time, measured as a second-order photon cross-correlation function, was found to be below 400 ps, with timing jitter of less than 40 ps. |
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Spie |
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Dusek, M.; Hillery, M.S.; Schleich, W.P.; Prochazka, I.; Migdall, A.L.; Pauchard, A. |
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Photon Counting Applications, Quantum Optics, and Quantum Cryptography |
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1431 |
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Słysz, W.; Węgrzecki, M.; Bar, J.; Grabiec, P.; Górska, M.; Zwiller, V.; Latta, C.; Bohi, P.; Milostnaya, I.; Minaeva, O.; Antipov, A.; Okunev, O.; Korneev, A.; Smirnov, K.; Voronov, B.; Kaurova, N.; Gol’tsman, G.; Pearlman, A.; Cross, A.; Komissarov, I.; Verevkin, A.; Sobolewski, R. |
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Fiber-coupled single-photon detectors based on NbN superconducting nanostructures for practical quantum cryptography and photon-correlation studies |
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2006 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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88 |
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26 |
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261113 (1 to 3) |
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SSPD, SNSPD |
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We have fabricated and tested a two-channel single-photon detector system based on two fiber-coupled superconducting single-photon detectors (SSPDs). Our best device reached the system quantum efficiency of 0.3% in the 1540-nm telecommunication wavelength with a fiber-to-detector coupling factor of about 30%. The photoresponse consisted of 2.5-ns-wide voltage pulses with a rise time of 250ps and timing jitter below 40ps. The overall system response time, measured as a second-order, photon cross-correlation function, was below 400ps. Our SSPDs operate at 4.2K inside a liquid-helium Dewar, but their optical fiber inputs and electrical outputs are at room temperature. Our two-channel detector system should find applications in practical quantum cryptography and in antibunching-type quantum correlation measurements.
The authors would like to thank Dr. Marc Currie for his assistance in early time-resolved photoresponse measurements and Professor Atac Imamoglu for his support. This work was supported by the Polish Ministry of Science under Project No. 3 T11B 052 26 (Warsaw), RFBR 03-02-17697 and INTAS 03-51-4145 grants (Moscow), CRDF Grant No. RE2-2531-MO-03 (Moscow), RE2-2529-MO-03 (Moscow and Rochester), and US AFOSR FA9550-04-1-0123 (Rochester). Additional funding was provided by the grants from the MIT Lincoln Laboratory and BBN Technologies Corp. |
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0003-6951 |
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1449 |
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Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Minaeva, O.; Kaurova, N.; Divochiy, A.; Korneev, A.; Tarkhov, M.; Voronov, B.; Milostnaya, I.; Gol'tsman, G.; Sobolewski, R. |
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Fluctuations in two-dimensional superconducting NbN nanobridges and nanostructures meanders |
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2007 |
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Proc. APS March Meeting |
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Proc. APS March Meeting |
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52 |
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1 |
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L9.00013 |
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We have observed fluctuations, manifested as sub-nanosecond to nanosecond transient, millivolt-amplitude voltage pulses, generated in two-dimensional NbN nanobridges, as well as in extended superconducting meander nanostructures, designed for single photon counting. Both nanobridges and nano-stripe meanders were biased at currents close to the critical current and measured in a range of temperatures from 1.5 to 8 K. During the tests, the devices were blocked from all incoming radiation by a metallic enclosure and shielded from any external magnetic fields. We attribute the observed spontaneous voltage pulses to the Kosterlitz-Thouless-type fluctuations, where the high enough applied bias current reduces the binding energy of vortex-antivortex pairs and, subsequently, thermal fluctuations break them apart causing the order parameter to momentarily reduce to zero, which in turn causes a transient voltage pulse. The duration of the voltage pulses depended on the device geometry (with the high-kinetic inductance meander structures having longer, nanosecond, pulses) while their rate was directly related to the biasing current as well as temperature. |
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1027 |
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Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Gap frequency and photon absorption in a hot electron bolometer |
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2016 |
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Proc. 27th Int. Symp. Space Terahertz Technol. |
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Proc. 27th Int. Symp. Space Terahertz Technol. |
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121 |
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NbN HEB; Si membrane |
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The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015. |
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Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
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Helicity-sensitive plasmonic terahertz interferometer |
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2020 |
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Nano Lett. |
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Nano Lett. |
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20 |
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10 |
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7296-7303 |
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graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
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Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
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CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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PMID:32903004 |
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Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Yu. P.; Kaurova, N. S.; Voronov, B. M.; Gol'tsman, G. N. |
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Hot electron bolometer mixer for 20 – 40 THz frequency range |
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2005 |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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393-397 |
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IR NbN HEB mixers |
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The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator. |
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Göteborg, Sweden |
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369 |
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