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Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
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Graphene-layer and graphene-nanoribbon FETs as THz detectors |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051054 |
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field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
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We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
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1742-6588 |
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1300 |
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Author |
Dieleman, Piter |
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Fundamental limitations of THz niobium and niobiumnitride SIS mixers |
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1998 |
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SIS |
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Ph.D. thesis |
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Rijksuniversiteit, Groningen |
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529 |
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Ovchinnikov, Yu. N.; Varlamov, A. A. |
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Fluctuation-dissipative phenomena in a narrow superconducting channel carrying current below critical |
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2009 |
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arXiv |
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0910.2659v1 |
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1-4 |
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superconducting nanowire, resistance calculation |
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The theory of current transport in a narrow superconducting channel accounting for thermal fluctuations is developed. These fluctuations result in the appearance of small but finite dissipation in the sample. The value of corresponding voltage is found as the function of temperature (close to transition temperature) and arbitrary bias current. It is demonstrated that the value of the activation energy (exponential factor in the Arrenius law) when current approaches to the critical one is proportional to (1-J/Jc)^(5/4). This result is in concordance with the one for the affine phenomenon of the Josephson current decay due to the thermal phase fluctuations, where the activation energy proportional (1-J/J_c)^(3/2)(the difference in the exponents is related to the additional current dependence of the order parameter). Found dependence of the activation energy on current explains the enormous discrepancy between the theoretically predicted before and the experimentally observed broadening of the resistive transition. |
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arXiv:0910.2659v1; 4 pages, 3 figures |
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931 |
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Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
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Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
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1997 |
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Phys. Rev. B |
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Phys. Rev. B |
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56 |
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16 |
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10089-10096 |
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disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity |
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The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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0163-1829 |
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1766 |
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Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. |
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Electron heating in metallic resistors at sub-Kelvin temperature |
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Journal Article |
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2007 |
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Phys. Rev. B |
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Phys. Rev. B |
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76 |
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165426(1-9) |
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electron heating in resistor, HEB distributed model, HEB model, hot electrons |
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In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments. |
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Recommended by Klapwijk as example for writing the article on the HEB model. |
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936 |
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