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Author |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Year |
Publication |
Links |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
1996 |
Surface Science |
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Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
2002 |
Mater. Sci. Forum |
|
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
Effect of a high magnetic field on the spectrum of donors in InSb |
1977 |
Fizika i Tekhnika Poluprovodnikov |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
Effect of a strong magnetic field on the spectrum of donors in InSb |
1978 |
Sov. Phys. Semicond. |
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