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Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Lubenchenko, A. V.; Morozov, P. V.; Shurkaeva, I. V.; Smirnov, K. V. |
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Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1124 |
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051030 |
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SSPD, SNSPD, VN |
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We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors. |
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1742-6588 |
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1228 |
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Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
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Title |
Influence of deposited material energy on superconducting properties of the WSi films |
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Conference Article |
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2020 |
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IOP Conf. Ser.: Mater. Sci. Eng. |
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IOP Conf. Ser.: Mater. Sci. Eng. |
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781 |
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012013 (1 to 6) |
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WSi SSPD, SNSPD |
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WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. |
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1757-899X |
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1798 |
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Rosfjord, K. M.; Yang, J. K. W.; Dauler, E. A.; Anant, V.; Berggren, K. K.; Kerman, A. J.; Voronov, B. M.; Gol’tsman, G. N. |
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Increased detection efficiencies of nanowire single-photon detectors by integration of an optical cavity and anti-reflection coating |
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2006 |
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CLEO/QELS |
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CLEO/QELS |
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JTuF2 (1 to 2) |
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SSPD, SNSPD |
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We fabricate and test superconducting NbN-nanowire single-photon detectors with an integrated optical cavity and anti-reflection coating. We design the cavity and coating such as to maximize absorption in the NbN film of the detector. |
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2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference |
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1452 |
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Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte 2, P. A. J.; Voronov, B.; Gol’tsman, G. |
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Increased bandwidth of NbN phonon cooled hot electron bolometer mixers |
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Conference Article |
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2004 |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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381-386 |
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NbN HEB mixers, IF bandwidth |
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We study experimentally the IF gain bandwidth of NbN phonon-cooled hot-electron-bolometer (HEB) mixers for a set of devices with different contact structures but an identical NbN film. We observe that the IF bandwidth depends strongly on the exact contact structure and find an IF gain bandwidth of 6 GHz for a device with an additional superconducting layer (NbTiN) in between the active NbN film and the gold contact to the antenna. These results contradict the common opinion that the IF bandwidth is determined by the phonon-escape time between the NbN film and the substrate. Hence we calculate the IF gain bandwidth of a superconducting film using a two-temperature model. We find that the bandwidth increases strongly with operating temperature and is not limited by the phonon escape time. This is because of strong temperature dependence of the phonon specific heat in the NbN film. |
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1494 |
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Yang, Z. Q.; Hajenius, M.; Baselmans, J. J. A.; Gao, J.R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. |
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Improved sensitivity of NbN hot electron bolometer mixers by vacuum baking |
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Conference Article |
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2005 |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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222-225 |
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NbN HEB mixer |
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We find that the sensitivity of heterodyne receivers based on superconducting hot-electron bolometer (HEB) in- creases by 25 − 30% after baking at 85 o C and in a high vacuum. The devices studied are twin-slot antenna coupled HEB mixers with a small NbN bridge of 1×0.15 μm 2 . The mixer noise temperature, gain, and resistance versus temperature curve of a HEB before and after baking are compared and analyzed. We show that baking reduces the intrinsic noise of the mixer by 37 % and makes the superconducting transition of the bridge and the contacts sharper. We argue that the reduction of the noise is due to the improvement of the transparency of the contact/film interface. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and a bath temperature of 4.3 K. |
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1471 |
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