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Ryabchun, S.; Tong, C.-yu E.; Blundell, R.; Kimberk, R.; Gol’tsman, G. |
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Title  |
Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixers |
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Conference Article |
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2006 |
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Proc. SPIE |
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Proc. SPIE |
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6373 |
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63730J (1 to 5) |
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Keywords |
NbN HEB mixers, hot-electron bolometer mixers, stability, Allan variance, LO power fluctuations |
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Abstract |
We report our studies of the effect of microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the NbN hot-electron bolometer (HEB) mixer incorporated into a THz heterodyne receiver. It is shown that exposing the HEB mixer to microwave radiation does not result in a significant rise of the receiver noise temperature and degradation of the mixer conversion gain so long as the level of microwave power is small compared to the local oscillator drive. Hence the injection of a small, but controlled amount of microwave radiation enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the stability of HEB mixer receivers. |
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SPIE |
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Anwar, M.; DeMaria, A.J.; Shur, M.S. |
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Terahertz Physics, Devices, and Systems |
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1441 |
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Author |
Lobanov, Y.V.; Tong, C.-Y.E.; Hedden, A.S.; Blundell, R.; Voronov, B.M.; Gol'tsman, G.N. |
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Title |
Direct measurement of the gain and noise bandwidths of HEB mixers |
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Journal Article |
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2011 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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Volume |
21 |
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3 |
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645-648 |
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Keywords |
waveguide NbN HEB mixers |
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The intermediate frequency (IF) bandwidth of a hot electron bolometer (HEB) mixer is an important parameter of the mixer, in that it helps to determine its suitability for a given application. With the availability of wideband low noise amplifiers, it is simple to measure the performance of an HEB mixer over a wide range of IF at a fixed LO frequency using the standard Y-factor method. This in-situ method allows us to measure both the gain and noise bandwidths simultaneously. We have also measured mixer output impedance with a vector network analyser. Intrinsic time constant has been extracted from the impedance data and compared to the mixer's bandwidths determined from receiver Y-factor measurement. |
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RPLAB @ gujma @ |
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720 |
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Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Title |
Development of a silicon membrane-based multipixel hot electron bolometer receiver |
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Journal Article |
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2017 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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Volume |
27 |
Issue |
4 |
Pages |
1-5 |
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Keywords |
Multi-pixel, NbN HEB, silicon-on-insulator, horn array |
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Abstract |
We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. |
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1051-8223 |
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1324 |
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Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Title |
Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver |
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Conference Article |
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Year |
2017 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
27 |
Issue |
4 |
Pages |
6 |
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Keywords |
Multi-pixel, HEB, silicon-on-insulator, horn array |
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Abstract |
We report on the development of a multi-pixel
Hot Electron Bolometer (HEB) receiver fabricated using
silicon membrane technology. The receiver comprises a
2 × 2 array of four HEB mixers, fabricated on a single
chip. The HEB mixer chip is based on a superconducting
NbN thin film deposited on top of the silicon-on-insulator
(SOI) substrate. The thicknesses of the device layer and
handling layer of the SOI substrate are 20 μm and 300 μm
respectively. The thickness of the device layer is chosen
such that it corresponds to a quarter-wave in silicon at
1.35 THz. The HEB mixer is integrated with a bow-tie
antenna structure, in turn designed for coupling to a
circular waveguide, |
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RPLAB @ kovalyuk @ |
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1111 |
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Tong, C. Y. E.; Blundell, R.; Paine, S.; Papa, D. C.; Kawamura, J.; Stern, J.; LeDuc, H. G. |
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Title |
Design and characterization of a 250-350 GHz fixed-tuned superconductor-insulator-insulator receiver |
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1996 |
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IEEE Trans. Microw. Theory Techn. |
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44 |
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9 |
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1548-1556 |
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