|
Author |
Title |
Year |
Publication |
Links |
|
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. |
Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency |
2017 |
Proc. 28th Int. Symp. Space Terahertz Technol. |
|
|
Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. |
Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes |
2007 |
J. Appl. Phys. |
|
|
Vahtomin, Yuriy B.; Finkel, Matvey I.; Antipov, Sergey V.; Voronov, Boris M.; Smirnov, Konstantin V.; Kaurova, Natalia S.; Drakinski, Vladimir N.; Gol'tsman, Gregogy N. |
Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si |
2002 |
Proc. 13th Int. Symp. Space Terahertz Technol. |
|
|
Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
Gap frequency and photon absorption in a hot electron bolometer |
2016 |
Proc. 27th Int. Symp. Space Terahertz Technol. |
|
|
Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory |
Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors |
2020 |
Graphene and 2dm Virt. Conf. |
|