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Author Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V.
Title (down) Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction Type Journal Article
Year 1991 Publication Phys. B Condens. Mat. Abbreviated Journal Phys. B Condens. Mat.
Volume 169 Issue 1-4 Pages 629-630
Keywords impure superconductors
Abstract Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that frequency range of enhancement effect narrows with the decrease of electron mean free path, ℓ, and at ℓ⩽1nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on ℓ are explained by taking into account strong electron-electron interaction in impure metals.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1682
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V.
Title (down) Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction Type Journal Article
Year 1990 Publication Solid State Communications Abbreviated Journal Solid State Communications
Volume 75 Issue 8 Pages 639-641
Keywords impure superconductors
Abstract Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1687
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Author Zhang, Jin; Slysz, W.; Verevkin, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G. N.; Sobolewski, R.
Title (down) Response time characterization of NbN superconducting single-photon detectors Type Journal Article
Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 13 Issue 2 Pages 180-183
Keywords SSPD jitter, SNSPD jitter
Abstract We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps.
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Corporate Author Thesis
Publisher IEEE Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1058
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Author Gousev, Y. P.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.; Semenov, A. D.; Barowski, H. S.; Nebosis, R. S.; Renk, K. F.
Title (down) Quasioptical superconducting hot electron bolometer for submillmeter waves Type Journal Article
Year 1996 Publication Int. J. of Infrared and Millimeter Waves Abbreviated Journal Int. J. of Infrared and Millimeter Waves
Volume 17 Issue 2 Pages 317-331
Keywords NbN HEB
Abstract We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0195-9271 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1618
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Author Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R.
Title (down) Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 9 Issue 2 Pages 3338-3341
Keywords NbN SSPD, SNSPD
Abstract We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1566
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Author Polyakova, M.; Semenov, A. V.; Kovalyuk, V.; Ferrari, S.; Pernice, W. H. P.; Gol'tsman, G. N.
Title (down) Protocol of measuring hot-spot correlation length for SNSPDs with near-unity detection efficiency Type Journal Article
Year 2019 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 29 Issue 5 Pages 1-5
Keywords SSPD, waveguide-integrated SNSPD, hot-spot interaction length
Abstract We present a simple quantum detector tomography protocol, which allows, without ambiguities, to measure the two-spot detection efficiency and extract the hot-spot interaction length of superconducting nanowire single photon detectors (SNSPDs) with unity intrinsic detection efficiency. We identify a significant parasitic contribution to the measured two-spot efficiency, related to an effect of the bias circuit, and find a way to rule out this contribution during data post-processing and directly in the experiment. From the data analysis for waveguide-integrated SNSPD, we find signatures of the saturation of the two-spot efficiency and hot-spot interaction length of order of 100 nm.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1187
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Author Chen, J.; Kang, L.; Jin, B. B.; Xu, W. W.; Wu, P. H.; Zhang, W.; Jiang, L.; Li, N.; Shi, S. C.; Gol'tsman, G. N.
Title (down) Properties of terahertz superconducting hot electron bolometer mixers Type Journal Article
Year 2008 Publication Int. J. Terahertz Sci. Technol. Abbreviated Journal Int. J. Terahertz Sci. Technol.
Volume 1 Issue 1 Pages 37-41
Keywords NbN HEB mixers, noise temperature
Abstract A quasi-optical superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixer has been fabricated and measured in the terahertz (THz) frequency range of 0.5~2.52 THz. A receiver noise temperature of 2000 K at 2.52 THz has been obtained for the mixer without corrections. Also, the effect of a Parylene C anti-reflection (AR) coating on the silicon (Si) lens has been studied.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1417
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Semenov, A. D.; Sergeev, A. V.
Title (down) Processes of electron-phonon interaction in thin YBaCuO films Type Journal Article
Year 1991 Publication Phys. C: Supercond. Abbreviated Journal Phys. C: Supercond.
Volume 185-189 Issue Pages 1371-1372
Keywords YBCO HTS detectors
Abstract The ultrafast voltage response of YBaCuO films to laser radiation is studied and compared with previously investigated quasiparicles response to radiation of submillimeter wavelength range. Voltage shift under the visible light radiation has two components. Picosecond response realized as suppression superconductivity by nonequilibrium excess quasiparticles, response time is determined by quasiparticles recombination rate. Nanosecond response is probably due to bolometric effect.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4534 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1676
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title (down) Population and lifetime of excited states of shallow impurities in Ge Type Journal Article
Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 49 Issue 2 Pages 355-362
Keywords Ge, photothermal ionization, shallow impurities
Abstract An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1719
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Author Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N.
Title (down) Picosecond response of a superconducting hot-electron NbN photodetector Type Journal Article
Year 1998 Publication Appl. Supercond. Abbreviated Journal Appl. Supercond.
Volume 6 Issue 7-9 Pages 423-428
Keywords NbN SSPD, SNSPD
Abstract The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0964-1807 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1584
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