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Author Gol'tsman, Gregory; Semenov, Alexei; Smirnov, Konstantin; Voronov, Boris
Title (up) Background limited quantum superconducting detector for submillimeter wavelengths Type Conference Article
Year 2001 Publication Proc. 12th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 12th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 469-475
Keywords Ti SQD, SQUID readout
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Area Expedition Conference
Notes Approved no
Call Number Serial 1540
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Author Semenov, Alexei; Hübers, Heinz-Wilhelm; Engel, Andreas; Gol'tsman, Gregory N.
Title (up) Background limited superconducting quantum detector for astronomy Type Abstract
Year 2002 Publication NASA/ADS Abbreviated Journal NASA/ADS
Volume Issue Pages
Keywords SQD
Abstract We present the concept of the superconducting quantum detector for astronomy. Response to a single absorbed photon appears due to successive formation of a normal spot and phase-slip-centers in a narrow strip carrying sub-critical supercurrent. The detector simultaneously has a moderate energy resolution and a variable cut-off wavelength depending on both the material used and operation conditions. We simulated performance of the background-limited direct detector having the 100- micrometer cut-off wavelength. Low dark count rate will allow to realize 10-21 W Hz-1/2 noise equivalent power at 4 K background radiation. The intrinsic recovery time of the counter is rather determined by diffusion of nonequilibrium electrons, thus, thermal fluctuations do not hamper energy resolution of the detector. Provided an appropriate readout technique, the resolution should be better than 1/20 at 50- micrometer wavelength. Planar layout and relatively simple technology favor integration of the detector into an array.
Address Monterey, CA
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Area Expedition Conference Far-IR, Sub-mm & MM Detector Technology Workshop, held 1-3 April 2002
Notes id.62 Approved no
Call Number Serial 1535
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Author Tovpeko, N. A.; Trifonov, A. V.; Semenov, A. V.; Antipov, S. V.; Kaurova, N. S.; Titova, N. A.; Goltsman, G. N.
Title (up) Bandwidth performance of a THz normal metal TiN bolometer-mixer Type Conference Article
Year 2019 Publication Proc. 30th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 30th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 102-103
Keywords TiN normal metal bolometer, NMB
Abstract We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films.
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Notes Approved no
Call Number Serial 1279
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Author Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F.
Title (up) Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051050 (1 to 5)
Keywords field-effect transistor, FET, carbon nanotube, CNT
Abstract In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1301
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Author Schubert, J.; Semenov, A.; Hübers, H.-W.; Gol'tsman, G.; Schwaab, G.; Voronov, B.; Gershenzon, E.
Title (up) Broad-band terahertz NbN hot-electron bolometric mixer Type Conference Article
Year 1999 Publication Inst. Phys. Conf. Abbreviated Journal Inst. Phys. Conf.
Volume 167 Issue Pages 663-666
Keywords NbN HEB mixers
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Area Expedition Conference 4th Europ. Conf. on Appl. Superconductivity, Barcelona, Spain, 14-17 September 1999
Notes Approved no
Call Number Serial 1578
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Author Loudkov, D.; Khosropanah, P.; Cherednichenko, S.; Adam, A.; MerkeI, H.; Kollberg, E.; Gol'tsman, G.
Title (up) Broadband fourier transform spectrometer (FTS) measurements of spiral and double-slot planar antennas at THz frequencies Type Conference Article
Year 2002 Publication Proc. 13th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 13th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 373-369
Keywords NbN HEB mixers
Abstract The direct responses of NbN phonon-cooled hot electron bolometer (HEB) mixers, integrated with different planar antennas, are measured, using Fourier Transform Spectrometer (F1S). One spiral antenna and several double slot antennas, designed for 0.6, 1.4, 1.6, 1.8 and 2.5 THz central frequencies, are investigated. The Optimization of the measurement set-up is discussed in terms of the beam splitter and the F11S-to-HEB coupling. The result shows that the spiral antenna is circular polarized and has a bandwidth of about 2 THz. The frequency bands of double slot antennas show some shift from the design values and their relative bandwidth increases by increasing the design frequency. The antenna responses do not depend on the HEB bias point and temperature, as long as the device is in the resistive state.
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Area Expedition Conference
Notes Approved no
Call Number Serial 1530
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Author Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A.
Title (up) Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? Type Conference Article
Year 2006 Publication Proc. 17th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 17th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 187-189
Keywords NbN HEB mixers
Abstract We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
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Notes Approved no
Call Number Serial 1439
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Author Zolotov, P.; Divochiy, A.; Korneeva, Yu.; Vakhtomin, Yu.; Seleznev, V.; Smirnov, K.
Title (up) Capability investigation of superconducting single-photon detectors, optimized for 800–1200 nm spectrum range Type Miscellaneous
Year 2015 Publication 3th ICQT Abbreviated Journal 3th ICQT
Volume Issue Pages
Keywords SSPD, SNSPD
Abstract
Address Hotel Ukraina (Radisson), Moscow
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Notes Poster Approved no
Call Number Serial 1253
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Author Titova, N.; Gayduchenko, I. A.; Moskotin, M. V.; Fedorov, G. F.; Goltsman, G. N.
Title (up) Carbon nanotube based terahertz radiation detectors Type Conference Article
Year 2019 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1410 Issue Pages 012208 (1 to 5)
Keywords carbon nanotubes, CNT
Abstract In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending on the contact metallization of the device, various detection mechanisms are manifested.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1270
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Author Pyatkov, Felix; Khasminskaya, Svetlana; Fütterling, Valentin; Fechner, Randy; Słowik, Karolina; Ferrari, Simone; Kahl1, Oliver; Kovalyuk, Vadim; Rath, Patrik; Vetter, Andreas; Flavel, Benjamin S.; Hennrich, Frank; Kappes, Manfred M.; Gol’tsman, Gregory N.; Korneev, Alexander; Rockstuhl, Carsten; Krupke, Ralph; Pernice, Wolfram H. P.
Title (up) Carbon nanotubes as exceptional electrically driven on-chip light sources Type Miscellaneous
Year 2016 Publication 2Physics Abbreviated Journal 2Physics
Volume Issue Pages
Keywords carbon nanotubes, CNT
Abstract Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits.

Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3].

Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique.
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ISSN 2372-1782 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1219
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