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Author |
Barends, R.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M. |
Title |
Current-induced vortex unbinding in bolometer mixers |
Type |
Journal Article |
Year |
2005 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
87 |
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Pages |
263506 (1 to 3) |
Keywords |
HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile |
Abstract |
We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth. |
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604 |
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Author |
Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio |
Title |
Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation |
Type |
Journal Article |
Year |
2010 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
97 |
Issue |
2 |
Pages |
3 |
Keywords |
Annealing |
Abstract |
We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing. |
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Annealing |
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RPLAB @ gujma @ |
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691 |
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