| Records |
| Author |
Pernice, W.; Schuck, C.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
Title  |
High speed travelling wave single-photon detectors with near-unity quantum efficiency |
Type |
Journal Article |
| Year |
2011 |
Publication |
arXiv |
Abbreviated Journal |
arXiv |
| Volume |
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Issue |
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Pages |
1-14 |
| Keywords |
SPD |
| Abstract |
Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. Close-to-unity photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides and achieve single photon detection efficiency up to 94% at telecom wavelengths. Our detectors are fully embedded in a scalable, low loss silicon photonic circuit and provide ultrashort timing jitter of 18ps at multi-GHz detection rates. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics. |
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arXiv:1108.5299 |
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RPLAB @ gujma @ |
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661 |
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Crespi, Andrea; Ramponi, Roberta; Osellame, Roberto; Sansoni, Linda; Bongioanni, Irene; Sciarrino, Fabio; Vallone, Giuseppe; Mataloni, Paolo |
| Title |
Integrated photonic quantum gates for polarization qubits |
Type |
Journal Article |
| Year |
2011 |
Publication |
Nature Communications |
Abbreviated Journal |
Nat. Comm. |
| Volume |
2 |
Issue |
566 |
Pages |
6 |
| Keywords |
fromIPMRAS |
| Abstract |
The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. However, the technology for handling polarization-encoded qubits, the most commonly adopted approach, is still missing in quantum optical circuits. Here we demonstrate the first integrated photonic controlled-NOT (CNOT) gate for polarization-encoded qubits. This result has been enabled by the integration, based on femtosecond laser waveguide writing, of partially polarizing beam splitters on a glass chip. We characterize the logical truth table of the quantum gate demonstrating its high fidelity to the expected one. In addition, we show the ability of this gate to transform separable states into entangled ones and vice versa. Finally, the full accessibility of our device is exploited to carry out a complete characterization of the CNOT gate through a quantum process tomography. |
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RPLAB @ gujma @ |
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765 |
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Lobanov, Y.; Tong, E.; Blundell, R.; Hedden, A.; Voronov, B.; Gol'tsman, G. |
| Title |
Large-signal frequency response of an HEB mixer: from 300 MHz to terahertz |
Type |
Journal Article |
| Year |
2011 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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| Volume |
21 |
Issue |
3 |
Pages |
628-631 |
| Keywords |
waveguide NbN HEB mixers |
| Abstract |
We present a study of the large signal frequency response of an HEB mixer over a wide frequency range. In our experiments, we have subjected the HEB mixer to incident electromagnetic radiation from 0.3 GHz to 1 THz. The mixer element is an NbN film deposited on crystalline quartz. The mixer chip is mounted in a waveguide cavity, coupled to free space with a diagonal horn. At microwave frequencies, electromagnetic radiation is applied through the coaxial bias port of the mixer block. At higher frequencies the input signal passes via the diagonal horn feed. At each frequency, the incident power is varied and a family of I-V curves is recorded. From the curves we identify 3 distinct regimes of operation of the mixer separated by the phonon relaxation frequency and the superconducting energy gap frequency observed at about 3 GHz and 660 GHz respectively. In this paper, we will present observed curves and discuss the results of our experiment. |
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RPLAB @ gujma @ |
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719 |
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Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory |
| Title |
Low noise and wide bandwidth of NbN hot-electron bolometer mixers |
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Journal Article |
| Year |
2011 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
98 |
Issue |
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Pages |
033507 (1 to 3) |
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NbN HEB mixer |
| Abstract |
We report a record double sideband noise temperature of 600 K (5hν/kB) offered by a NbN hot-electron bolometer receiver at 2.5 THz. Allowing for standing wave effects, this value was found to be constant in the intermediate frequency range 1–7 GHz, which indicates that the mixer has an unprecedentedly large noise bandwidth in excess of 7 GHz. The insight into this is provided by gain bandwidth measurements performed at the superconducting transition. They show that the dependence of the bandwidth on the mixer length follows the model for an HEB mixer with diffusion and phonon cooling of the hot electrons. |
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RPLAB @ gujma @ |
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638 |
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Antipov, Andrei; Bell, Matt; Yasar, Mesut; Mitin, Vladimir; Scharmach, William; Swihart, Mark; Verevkin, Aleksandr; Sergeev, Andrei |
| Title |
Luminescence of colloidal CdSe/ZnS nanoparticles: high sensitivity to solvent phase transitions |
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Journal Article |
| Year |
2011 |
Publication |
Nanoscale Research Letters |
Abbreviated Journal |
Nan. Res. Lett. |
| Volume |
6 |
Issue |
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Pages |
7 |
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We investigate nanosecond photoluminescence processes in colloidal core/shell CdSe/ZnS nanoparticles dissolved in water and found strong sensitivity of luminescence to the solvent state. Several pronounced changes have been observed in the narrow temperature interval near the water melting point. First of all, the luminescence intensity substantially (approximately 50%) increases near the transition. In a large temperature scale, the energy peak of the photoluminescence decreases with temperature due to temperature dependence of the energy gap. Near the melting point, the peak shows N-type dependence with the maximal changes of approximately 30 meV. The line width increases with temperature and also shows N-type dependence near the melting point. The observed effects are associated with the reconstruction of ligands near the ice/water phase transition. |
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RPLAB @ gujma @ |
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722 |
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