|
|
Il’in, K. S., Ptitsina, N. G., Sergeev, A. V., Gol’tsman, G. N., Gershenzon, E. M., Karasik, B. S., et al. (1998). Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films. Phys. Rev. B, 57(24), 15623–15628.
Abstract: A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
|
|
|
|
Gershenzon, E. M., Gol'tsman, G. N., Elant'ev, A. I., Karasik, B. S., & Potoskuev, S. E. (1988). Intense electromagnetic radiation heating of superconductor electrons in resistive state. Fizika Nizkikh Temperatur, 14(7), 753–763.
Abstract: An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model.
|
|
|
|
Gershenzon, E. M., Gol'tsman, G. N., Elantiev, A. I., Karasik, B. S., & Potoskuev, S. E. (1988). Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state. Sov. J. Low Temp. Phys., 14(7), 414–420.
|
|
|
|
Gershenzon, E. M., Gol'tsman, G. N., Karasik, B. S., Lugovaya, G. Y., Serebryakova, N. A., & Chinkova, E. V. (1992). Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials. Sverkhprovodimost': Fizika, Khimiya, Tekhnika, 5(6), 1129–1140.
Abstract: Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response.
|
|
|
|
Gol'tsman, G. N., Goghidze, I. G., Kouminov, P. B., Karasik, B. S., Semenov, A. D., & Gershenzon, E. M. (1994). Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses. J. Supercond., 7(4), 751–755.
Abstract: The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.
|
|
|
|
Dzardanov, A., Ekstrom, H., Gershenzon, E., Gol'tsman, G., Jacobsson, S., Karasik, B., et al. (1994). Hot-electron superconducting mixers for 20-500 GHz operation. In Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. (Vol. 2250, pp. 276–278).
Abstract: Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies.
|
|
|
|
Karasik, B. S., Gol'tsman, G. N., Voronov, B. M., Svechnikov, S. I., Gershenzon, E. M., Ekstrom, H., et al. (1995). Hot electron quasioptical NbN superconducting mixer. IEEE Trans. Appl. Supercond., 5(2), 2232–2235.
Abstract: Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform.
|
|
|
|
Karasik, B. S., Milostnaya, I. I., Zorin, M. A., Elantev, A. I., Gol'tsman, G. N., & Gershenzon, E. M. (1995). High speed current switching of homogeneous YBaCuO film between superconducting and resistive states. IEEE Trans. Appl. Supercond., 5(2), 3042–3045.
Abstract: Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.
|
|
|
|
Sergeev, A., Semenov, A., Trifonov, V., Karasik, B., Gol'tsman, G., & Gershenzon, E. (1994). Heat transfer in YBaCuO thin film/sapphire substrate system. J. Supercond., 7(2), 341–344.
Abstract: The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.
|
|
|
|
Gershenzon, E. M., Gershenson, M. E., Goltsman, G. N., Karasik, B. S., Lyulkin, A. M., & Semenov, A. D. (1989). Fast-response superconducting electron bolometer. Pisma v Zhurnal Tekhnicheskoi Fiziki, 15(3), 88–92.
Abstract: The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns.
|
|
