Abstract: High-order nonlinear light–matter interactions in gases enable the generation of X-ray and attosecond light pulses, metrology and spectroscopy1. Optical nonlinearities in solid-state materials are particularly interesting for combining optical and electronic functions for high-bandwidth information processing2. Third-order nonlinear optical processes in silicon have been used to process optical signals with bandwidths greater than 1 GHz (ref. 2). However, fundamental physical processes for a silicon-based optical modulator in the terahertz bandwidth range have not yet been explored. Here, we demonstrate ultrafast phononic modulation of the optical index of silicon by irradiation with intense few-cycle femtosecond pulses. The anisotropic reflectivity modulation by the resonant Raman susceptibility at the fundamental frequency of the longitudinal optical phonon of silicon (15.6 THz) generates a frequency comb up to seventh order. All-optical >100 THz frequency comb generation is realized by harnessing the coherent atomic motion of the silicon crystalline lattice at its highest mechanical frequency.

Abstract: The peculiar properties of quantum mechanics allow two remote parties to communicate a private, secret key, which is protected from eavesdropping by the laws of physics. So-called quantum key distribution (QKD) implementations always rely on detectors to measure the relevant quantum property of single photons. Here we demonstrate experimentally that the detectors in two commercially available QKD systems can be fully remote-controlled using specially tailored bright illumination. This makes it possible to tracelessly acquire the full secret key; we propose an eavesdropping apparatus built of off-the-shelf components. The loophole is likely to be present in most QKD systems using avalanche photodiodes to detect single photons. We believe that our findings are crucial for strengthening the security of practical QKD, by identifying and patching technological deficiencies.

Abstract: Quantum networks must have the crucial ability to entangle quantum nodes. A prominent example is the quantum repeater, which allows the distance barrier of direct transmission of single photons to be overcome, provided remote quantum memories can be entangled in a heralded fashion. Here, we report the observation of heralded entanglement between two ensembles of rare-earth ions doped into separate crystals. A heralded single photon is sent through a 50/50 beamsplitter, creating a single-photon entangled state delocalized between two spatial modes. The quantum state of each mode is subsequently mapped onto a crystal, leading to an entangled state consisting of a single collective excitation delocalized between two crystals. This entanglement is revealed by mapping it back to optical modes and by estimating the concurrence of the retrieved light state. Our results highlight the potential of crystals doped with rare-earth ions for entangled quantum nodes and bring quantum networks based on solid-state resources one step closer.

Abstract: Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly.

Abstract: High operation speed and low energy consumption may allow the superconducting digital single-flux-quantum circuits to outperform traditional complementary metal-oxide-semiconductor logic. The remaining major obstacle towards high element densities on-chip is a relatively large cell size necessary to hold a magnetic flux quantum Φ0. Inserting a π-type Josephson junction in the cell is equivalent to applying flux Φ0/2 and thus makes it possible to solve this problem. Moreover, using π-junctions in superconducting qubits may help to protect them from noise. Here we demonstrate the operation of three superconducting circuits-two of them are classical and one quantum-that all utilize such π-phase shifters realized using superconductor/ferromagnet/superconductor sandwich technology. The classical circuits are based on single-flux-quantum cells, which are shown to be scalable and compatible with conventional niobium-based superconducting electronics. The quantum circuit is a π-biased phase qubit, for which we observe coherent Rabi oscillations. We find no degradation of the measured coherence time compared to that of a reference qubit without a π-junction.

Abstract: The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. However, the technology for handling polarization-encoded qubits, the most commonly adopted approach, is still missing in quantum optical circuits. Here we demonstrate the first integrated photonic controlled-NOT (CNOT) gate for polarization-encoded qubits. This result has been enabled by the integration, based on femtosecond laser waveguide writing, of partially polarizing beam splitters on a glass chip. We characterize the logical truth table of the quantum gate demonstrating its high fidelity to the expected one. In addition, we show the ability of this gate to transform separable states into entangled ones and vice versa. Finally, the full accessibility of our device is exploited to carry out a complete characterization of the CNOT gate through a quantum process tomography.

Abstract: The prospect of an all-fibre optical communications network in which light can be generated, modulated and detected within the fibre itself without the need for discrete optoelectronic devices is an appealing one. However, to become a reality, this approach requires the incorporation of optoelectronic materials and functionalities into silica fibres to create a new breed of semiconductor-fibre hybrid devices for performing various tasks. Here, we report the integration of precisely doped semiconductor materials and high-quality rectifying semiconductor junctions into microstructured optical fibres, enabling high-speed, in-fibre functionalities such as photodetection at telecommunications wavelengths. These semiconductor-fibre hybrid devices exhibit a bandwidth of up to 3 GHz and seamless coupling to standard single-mode optical fibres.

Abstract: A high-definition LIDAR system with a rotating sensor head containing 64 semiconductor lasers allows the efficient generation of 3D environment maps at unprecedented levels of detail.