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Author Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. url  doi
openurl 
  Title (up) Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation Type Journal Article
  Year 2020 Publication Sci. Rep. Abbreviated Journal Sci. Rep.  
  Volume 10 Issue 1 Pages 16819  
  Keywords VN HEB  
  Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.  
  Address National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia  
  Corporate Author Thesis  
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  Series Volume Series Issue Edition  
  ISSN 2045-2322 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:33033360; PMCID:PMC7546726 Approved no  
  Call Number Serial 1797  
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Author Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. url  doi
openurl 
  Title (up) Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation Type Journal Article
  Year 2021 Publication Adv. Electron. Mater. Abbreviated Journal Adv. Electron. Mater.  
  Volume 7 Issue 3 Pages 2000872  
  Keywords SWCNT transistors  
  Abstract The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.  
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  Series Volume Series Issue Edition  
  ISSN 2199-160X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1843  
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Author Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. url  doi
openurl 
  Title (up) Influence of deposited material energy on superconducting properties of the WSi films Type Conference Article
  Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.  
  Volume 781 Issue Pages 012013 (1 to 6)  
  Keywords WSi SSPD, SNSPD  
  Abstract WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.  
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  Series Volume Series Issue Edition  
  ISSN 1757-899X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1798  
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Author Korneeva, Y. P.; Manova, N. N.; Dryazgov, M. A.; Simonov, N. O.; Zolotov, P. I.; Korneev, A. A. url  doi
openurl 
  Title (up) Influence of sheet resistance and strip width on the detection efficiency saturation in micron-wide superconducting strips and large-area meanders Type Journal Article
  Year 2021 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 34 Issue 8 Pages 084001  
  Keywords NbN SSPD, SMSPD  
  Abstract We report our study of detection efficiency (DE) saturation in wavelength range 400 – 1550 nm for the NbN Superconducting Microstrip Single-Photon Detectors (SMSPD) featuring the strip width up to 3 μm. We observe an expected decrease of the $DE$ saturation plateau with the increase of photon wavelength and decrease of film sheet resistance. At 1.7 K temperature DE saturation can be clearly observed at 1550 nm wavelength in strip with the width up to 2 μm when sheet resistance of the film is above 630Ω/sq. In such strips the length of the saturation plateau almost does not depend on the strip width. We used these films to make meander-shaped detectors with the light sensitive area from 20×20μm2 to a circle 50 μm in diameter. In the latter case, the detector with the strip width of 0.49 μm demonstrates saturation of DE up to 1064 nm wavelength. Although DE at 1310 and 1550 nm is not saturated, it is as high as 60%. The response time is limited by the kinetic inductance and equals to 20 ns(by 1/e decay), timing jitter is 44 ps. When coupled to multi-mode fibre large-area meanders demonstrate significantly higher dark count rate which we attribute to thermal background photons, thus advanced filtering technique would be required for practical applications.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1793  
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Author Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory doi  isbn
openurl 
  Title (up) Integrated contra-directional coupler for NV-centers photon filtering Type Conference Article
  Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS  
  Volume Issue Pages 354-360  
  Keywords NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings  
  Abstract We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds.  
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  ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium  
  Area Expedition Conference 32nd European Modeling & Simulation Symposium  
  Notes Approved no  
  Call Number Serial 1839  
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