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Lusche, R., Semenov, A., Il'in, K., Korneeva, Y., Trifonov, A., Korneev, A., et al. (2013). Effect of the wire width and magnetic field on the intrinsic detection efficiency of superconducting nanowire single-photon detectors. IEEE Trans. Appl. Supercond., 23(3), 2200205.
Abstract: We present thorough measurements of the intrinsic detection efficiency in the wavelength range from 350 to 2500 nm for meander-type TaN and NbN superconducting nanowire single-photon detectors with different widths of the nanowire. The width varied from 70 nm to 130 nm. The open-beam configuration allowed us to accurately normalize measured spectra and to extract the intrinsic detection efficiency. For detectors from both materials the intrinsic detection efficiency at short wavelengths amounts at 100% and gradually decreases at wavelengths larger than the specific cut-off wavelengths, which decreases with the width of the nanowire. Furthermore, we show that applying weak magnetic fields perpendicular to the meander plane decreases the smallest detectable photon flux.
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Lusche, R., Semenov, A., Ilin, K., Siegel, M., Korneeva, Y., Trifonov, A., et al. (2014). Effect of the wire width on the intrinsic detection efficiency of superconducting-nanowire single-photon detectors. J. Appl. Phys., 116(4), 043906 (1 to 9).
Abstract: A thorough spectral study of the intrinsic single-photon detection efficiency in superconducting TaN and NbN nanowires with different widths has been performed. The experiment shows that the cut-off of the intrinsic detection efficiency at near-infrared wavelengths is most likely controlled by the local suppression of the barrier for vortex nucleation around the absorption site. Beyond the cut-off quasi-particle diffusion in combination with spontaneous, thermally activated vortex crossing explains the detection process. For both materials, the reciprocal cut-off wavelength scales linearly with the wire width where the scaling factor agrees with the hot-spot detection model.
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Komrakova, S., Kovalyuk, V., An, P., Golikov, A., Rybin, M., Obraztsova, E., et al. (2020). Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit. In J. Phys.: Conf. Ser. (Vol. 1695, 012135).
Abstract: In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide.
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Novotny, L. (2007). Effective wavelength scaling for optical antennas. Phys. Rev. Lett., 98(26), 266802(1–4).
Abstract: In antenna theory, antenna parameters are directly related to the wavelength λ of incident radiation, but this scaling fails at optical frequencies where metals behave as strongly coupled plasmas. In this Letter we show that antenna designs can be transferred to the optical frequency regime by replacing λ by a linearly scaled effective wavelength λeff=n1+n2λ/λp, with λp being the plasma wavelength and n1, n2 being coefficients that depend on geometry and material properties. It is assumed that the antenna is made of linear segments with radii Râ‰<aa>λ. Optical antennas hold great promise for increasing the efficiency of photovoltaics, light-emitting devices, and optical sensors.
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Edlmayr, V., Harzer, T. P., Hoffmann, R., Kiener, D., Scheu, C., & Mitterer, C. (2011). Effects of thermal annealing on the microstructure of sputtered Al2O3 coatings. J. Vac. Sci. Technol. A, 29(4), 8.
Abstract: The morphology and microstructure of Al2O3 thin films deposited by pulsed direct current magnetron sputtering were studied in the as-grown state and after vacuum annealing at 1000 °C for 12 h using transmission electron microscopy. For the coating deposited under low ion bombardment conditions, the film consists of small γ- and/or δ-Al2O3 grains embedded in an amorphous matrix. The grain size at the region close to the interface to the substrate was much larger than that of the remaining layer. Growth of the γ-Al2O3 phase is promoted during annealing but no transformation to α-Al2O3 was detected. For high-energetic growth conditions, clear evidence for γ-Al2O3 formation was found in the upper part of the coating with grain size much larger than for low-energetic growth, but the film was predominately amorphous at the interface region. Annealing resulted in the transformation of γ-Al2O3 to α-Al2O3, while the mainly amorphous part crystallized to γ-Al2O3.
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