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Korneev, A.; Finkel, M.; Maslennikov, S.; Korneeva, Yu.; Florya, I.; Tarkhov, M.; Elezov, M.; Ryabchun, S.; Tretyakov, I.; Isupova, A.; Voronov, B.; Goltsman, G. |
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Title  |
Superconducting NbN terahertz detectors and infrared photon counters |
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Journal Article |
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Year |
2010 |
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Вестник НГУ. Серия: физ. |
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Вестник НГУ. Серия: физ. |
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5 |
Issue |
4 |
Pages |
68-72 |
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Keywords |
HEB; HEB mixer |
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We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. Keywords: Hot electron bolometer mixers, infrared single-photon detectors, superconducting device fabrication, superconducting NbN films. |
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1818-7994 |
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УДК 538.9 |
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RPLAB @ gujma @ |
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708 |
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Marsili, F.; Bitauld, D.; Fiore, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Goltsman, G. |
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Title |
Superconducting parallel nanowire detector with photon number resolving functionality |
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Journal Article |
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Year |
2009 |
Publication |
J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
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Volume |
56 |
Issue |
2-3 |
Pages |
334-344 |
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Keywords |
PNR; SSPD; SNSPD; thin superconducting films; photon number resolving detector; multiplication noise; telecom wavelength; NbN |
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We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise. |
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0950-0340 |
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RPLAB @ gujma @ |
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701 |
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Delacour, C.; Claudon, J.; Poizat, J.-Ph.; Pannetier, B.; Bouchiat, V.; de Lamaestre, R. Espiau; Villegier, J.-C.; Tarkhov, M.; Korneev, A.; Voronov, B.; Gol'tsman, G. |
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Title |
Superconducting single photon detectors made by local oxidation with an atomic force microscope |
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Journal Article |
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Year |
2007 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
90 |
Issue |
19 |
Pages |
191116 (1 t0 3) |
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SSPD |
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The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.
The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433. |
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0003-6951 |
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423 |
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Milostnaya, I.; Korneev, A.; Tarkhov, M.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G. |
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Title |
Superconducting single photon nanowire detectors development for IR and THz applications |
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Journal Article |
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2008 |
Publication |
J. Low Temp. Phys. |
Abbreviated Journal |
J. Low Temp. Phys. |
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Volume |
151 |
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1-2 |
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591-596 |
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Keywords |
NbN SSPD, SNSPD |
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We present our progress in the development of superconducting single-photon detectors (SSPDs) based on meander-shaped nanowires made from few-nm-thick superconducting films. The SSPDs are operated at a temperature of 2–4.2 K (well below T c ) being biased with a current very close to the nanowire critical current at the operation temperature. To date, the material of choice for SSPDs is niobium nitride (NbN). Developed NbN SSPDs are capable of single photon counting in the range from VIS to mid-IR (up to 6 μm) with a record low dark counts rate and record-high counting rate. The use of a material with a low transition temperature should shift the detectors sensitivity towards longer wavelengths. We present state-of-the art NbN SSPDs as well as the results of our recent approach to expand the developed SSPD technology by the use of superconducting materials with lower T c , such as molybdenum rhenium (MoRe). MoRe SSPDs first were made and tested; a single photon response was obtained. |
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0022-2291 |
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1244 |
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Korneeva, Y. P.; Mikhailov, M. Y.; Pershin, Y. P.; Manova, N. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Korneev, A. A.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Y.; Goltsman, G. N. |
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Title |
Superconducting single-photon detector made of MoSi film |
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Journal Article |
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2014 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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Volume |
27 |
Issue |
9 |
Pages |
095012 |
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Keywords |
SSPD, SNSPD |
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We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film. |
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IOP Publishing |
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0953-2048 |
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RPLAB @ sasha @ korneeva2014superconducting |
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1044 |
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Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Gol'tsman, G.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Verevkin, A.; Sobolewski, R. |
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Superconducting single-photon ultrathin NbN film detector |
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Journal Article |
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Year |
2005 |
Publication |
Quantum Electronics |
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Volume |
35 |
Issue |
8 |
Pages |
698-700 |
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Keywords |
NbN SSPD, SNSPD |
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Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps. |
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Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN |
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383 |
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Gershenzon, E.M.; Gol'tsman, G.N.; Dzardanov, A.L.; Kuznetsov, E.A. |
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Title |
Superconducting UHF-limiter based on electron heating up |
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Journal Article |
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Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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5 |
Issue |
11 |
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2164-2170 |
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electron heating, applications |
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The results of experimental investigation of fast-action 5HF-limiter are presented; the limiter is based on the utilization of electron hetaing phenomenon in thin superconducting films. The design of SHF-limiter, which is intended for operation at liquid helium temperatures and which has the form of a section of superconducting NbN microstrip line for 1-12 GHz rang, is described. |
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Russian |
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0235-8964 |
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1669 |
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Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Papa, D. C.; Hunter, T. R.; Paine, S. N.; Patt, F.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E. |
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Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation |
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Journal Article |
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2000 |
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IEEE Trans. Microw. Theory Techn. |
Abbreviated Journal |
IEEE Trans. Microw. Theory Techn. |
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48 |
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4 |
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683-689 |
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NbN HEB mixers, LO power, local oscillator power, saturation, linearity, dynamic range |
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In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season. |
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0018-9480 |
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RPLAB @ lobanovyury @ |
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573 |
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Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. |
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Superconductive properties of ultrathin NbN films on different substrates |
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Journal Article |
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1994 |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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7 |
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6 |
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1097-1102 |
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NbN films |
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A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz. |
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Russian |
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0131-5366 |
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Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках |
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1631 |
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Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. |
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Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder |
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Journal Article |
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2019 |
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Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
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12 |
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5 |
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054001 |
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epitaxial TiN films |
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We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films. |
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2331-7019 |
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