| Records |
| Author |
Kitaygorsky, J.; Komissarov, I.; Jukna, A.; Pan, D.; Minaeva, O.; Kaurova, N.; Divochiy, A.; Korneev, A.; Tarkhov, M.; Voronov, B.; Milostnaya, I.; Gol'tsman, G.; Sobolewski, R.R. |
Title  |
Dark counts in nanostructured nbn superconducting single-photon detectors and bridges |
Type |
Journal Article |
| Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
17 |
Issue |
2 |
Pages |
275-278 |
| Keywords |
SSPD; SNSPD |
| Abstract |
We present our studies on dark counts, observed as transient voltage pulses, in current-biased NbN superconducting single-photon detectors (SSPDs), as well as in ultrathin (~4 nm), submicrometer-width (100 to 500 nm) NbN nanobridges. The duration of these spontaneous voltage pulses varied from 250 ps to 5 ns, depending on the device geometry, with the longest pulses observed in the large kinetic-inductance SSPD structures. Dark counts were measured while the devices were completely isolated (shielded by a metallic enclosure) from the outside world, in a temperature range between 1.5 and 6 K. Evidence shows that in our two-dimensional structures the dark counts are due to the depairing of vortex-antivortex pairs caused by the applied bias current. Our results shed some light on the vortex dynamics in 2D superconductors and, from the applied point of view, on intrinsic performance of nanostructured SSPDs. |
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Edition |
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| ISSN |
1051-8223 |
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no |
| Call Number |
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Serial |
1248 |
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| Author |
Fiore, A.; Marsili, F.; Bitauld, D.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G. |
| Title |
Counting photons using a nanonetwork of superconducting wires |
Type |
Conference Article |
| Year |
2009 |
Publication |
Nano-Net |
Abbreviated Journal |
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| Volume |
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Issue |
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Pages |
120-122 |
| Keywords |
SSPD, SNSPD |
| Abstract |
We show how the parallel connection of photo-sensitive superconducting nanowires can be used to count the number of photons in an optical pulse, down to the single-photon level. Using this principle we demonstrate photon-number resolving detectors with unprecedented sensitivity and speed at telecommunication wavelengths. |
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Thesis |
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| Publisher |
Springer Berlin Heidelberg |
Place of Publication |
Berlin, Heidelberg |
Editor |
Cheng, M. |
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Summary Language |
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Original Title |
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Edition |
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| ISSN |
978-3-642-02427-6 |
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no |
| Call Number |
10.1007/978-3-642-02427-6_20 |
Serial |
1242 |
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| Author |
Goltsman, G.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Voronov, B.; Lipatov, A. P.; Pearlman, A. J.; Cross, A.; Slysz, W.; Verevkin, A. A.; Sobolewski, R. |
| Title |
Advanced nanostructured optical NbN single-photon detector operated at 2.0 K |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
5732 |
Issue |
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Pages |
520-529 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm2 with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as 30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was 20% and decreased exponentially with the wavelength reaching 0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10-21 W/Hz-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography. |
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Spie |
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Editor |
Razeghi, M.; Brown, G.J. |
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Conference |
Quantum Sensing and Nanophotonic Devices II |
| Notes |
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Approved |
no |
| Call Number |
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Serial |
1478 |
| Permanent link to this record |
