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| Author | Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman | ||||
Title  |
Characterization of the electron energy relaxation process in NbN hot-electron devices | Type | Conference Article | ||
| Year | 1999 | Publication | Proc. 10th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 10th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 390-397 | ||
| Keywords | HEB mixers, SSPD, SNSPD, NbN films, Nb films | ||||
| Abstract | We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1576 | |||
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| Author | Jiang, Ling; Miao, Wei; Zhang, Wen; Li, Ning; Lin, Zhen Hui; Yao, Qi Jun; Shi, Sheng-Cai; Svechnikov, Sergey I.; Vakhtomin, Yury B.; Antipov, Sergey V.; Voronov, Boris M.; Kaurova, Natalia S.; Gol'tsman, Gregory N. | ||||
| Title |
Characterization of quasi-optical NbN phonon-cooled superconducting HEB mixers | Type | Conference Article | ||
| Year | 2006 | Publication | Proc. 17th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 17th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 55-58 | ||
| Keywords | NbN HEB mixers | ||||
| Abstract | In this paper, we thoroughly investigate the performance of quasi-optical NbN phonon-cooled superconducting hot-electron bolometer (HEB) mixers, cryogenically cooled by a close-cycled 4-K refrigerator at 500 GI-1z and 850 GHz. The uncorrected lowest receiver noise Abstract---In temperatures measured are 800 K at 500 CHz without anti-reflection coating, and 1000 K @ 850 GHz with a 50 11M thick Mylar anti-reflection coating. The dependence of receiver noise temperature on the critical current and bath temperature of HEB mixer is also investigated here. Lifetime of quasi-optical superconducting NbN HEB mixers of different volumes, room temperature resistances, and critical temperatures are thoroughly studied. Increased room temperature resistance with time over the initial resistance changes between 1 and 1.2, and the reduced critical current with time over the initial value fluctuates slightly around 0.7 for most HEB mixers even of different volumes, room temperature resistances, and critical temperatures. The critical current degrades sharply vvhile room temperature resistance varies over 1.25. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1435 | |||
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| Author | Jiang, L.; Zhang, W.; Yao, Q. J.; Lin, Z. H.; Li, J.; Shi, S. C.; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. | ||||
| Title |
Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer | Type | Conference Article | ||
| Year | 2005 | Publication | Proc. PIERS | Abbreviated Journal | Proc. PIERS |
| Volume | 1 | Issue | 5 | Pages | 587-590 |
| Keywords | NbN HEB mixers | ||||
| Abstract | In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated. | ||||
| Address | Hangzhou, China | ||||
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| ISSN | 1931-7360 | ISBN | Medium | ||
| Area | Expedition | Conference | Progress In Electromagnetics Research Symposium | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1482 | |||
| Permanent link to this record | |||||
| Author | Pyatkov, Felix; Khasminskaya, Svetlana; Fütterling, Valentin; Fechner, Randy; Słowik, Karolina; Ferrari, Simone; Kahl1, Oliver; Kovalyuk, Vadim; Rath, Patrik; Vetter, Andreas; Flavel, Benjamin S.; Hennrich, Frank; Kappes, Manfred M.; Gol’tsman, Gregory N.; Korneev, Alexander; Rockstuhl, Carsten; Krupke, Ralph; Pernice, Wolfram H. P. | ||||
| Title |
Carbon nanotubes as exceptional electrically driven on-chip light sources | Type | Miscellaneous | ||
| Year | 2016 | Publication | 2Physics | Abbreviated Journal | 2Physics |
| Volume | Issue | Pages | |||
| Keywords | carbon nanotubes, CNT | ||||
| Abstract | Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits. Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3]. Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique. |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2372-1782 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1219 | |||
| Permanent link to this record | |||||
| Author | Titova, N.; Gayduchenko, I. A.; Moskotin, M. V.; Fedorov, G. F.; Goltsman, G. N. | ||||
| Title |
Carbon nanotube based terahertz radiation detectors | Type | Conference Article | ||
| Year | 2019 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1410 | Issue | Pages | 012208 (1 to 5) | |
| Keywords | carbon nanotubes, CNT | ||||
| Abstract | In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending on the contact metallization of the device, various detection mechanisms are manifested. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1270 | |||
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| Author | Zolotov, P.; Divochiy, A.; Korneeva, Yu.; Vakhtomin, Yu.; Seleznev, V.; Smirnov, K. | ||||
| Title |
Capability investigation of superconducting single-photon detectors, optimized for 800–1200 nm spectrum range | Type | Miscellaneous | ||
| Year | 2015 | Publication | 3th ICQT | Abbreviated Journal | 3th ICQT |
| Volume | Issue | Pages | |||
| Keywords | SSPD, SNSPD | ||||
| Abstract | |||||
| Address | Hotel Ukraina (Radisson), Moscow | ||||
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| Notes | Poster | Approved | no | ||
| Call Number | Serial | 1253 | |||
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| Author | Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. | ||||
| Title |
Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? | Type | Conference Article | ||
| Year | 2006 | Publication | Proc. 17th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 17th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 187-189 | ||
| Keywords | NbN HEB mixers | ||||
| Abstract | We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1439 | |||
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| Author | Loudkov, D.; Khosropanah, P.; Cherednichenko, S.; Adam, A.; MerkeI, H.; Kollberg, E.; Gol'tsman, G. | ||||
| Title |
Broadband fourier transform spectrometer (FTS) measurements of spiral and double-slot planar antennas at THz frequencies | Type | Conference Article | ||
| Year | 2002 | Publication | Proc. 13th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 13th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 373-369 | ||
| Keywords | NbN HEB mixers | ||||
| Abstract | The direct responses of NbN phonon-cooled hot electron bolometer (HEB) mixers, integrated with different planar antennas, are measured, using Fourier Transform Spectrometer (F1S). One spiral antenna and several double slot antennas, designed for 0.6, 1.4, 1.6, 1.8 and 2.5 THz central frequencies, are investigated. The Optimization of the measurement set-up is discussed in terms of the beam splitter and the F11S-to-HEB coupling. The result shows that the spiral antenna is circular polarized and has a bandwidth of about 2 THz. The frequency bands of double slot antennas show some shift from the design values and their relative bandwidth increases by increasing the design frequency. The antenna responses do not depend on the HEB bias point and temperature, as long as the device is in the resistive state. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1530 | |||
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| Author | Schubert, J.; Semenov, A.; Hübers, H.-W.; Gol'tsman, G.; Schwaab, G.; Voronov, B.; Gershenzon, E. | ||||
| Title |
Broad-band terahertz NbN hot-electron bolometric mixer | Type | Conference Article | ||
| Year | 1999 | Publication | Inst. Phys. Conf. | Abbreviated Journal | Inst. Phys. Conf. |
| Volume | 167 | Issue | Pages | 663-666 | |
| Keywords | NbN HEB mixers | ||||
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| Area | Expedition | Conference | 4th Europ. Conf. on Appl. Superconductivity, Barcelona, Spain, 14-17 September 1999 | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1578 | |||
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| Author | Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. | ||||
| Title |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051050 (1 to 5) | |
| Keywords | field-effect transistor, FET, carbon nanotube, CNT | ||||
| Abstract | In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. | ||||
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| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1301 | |||
| Permanent link to this record | |||||