| Records |
| Author |
Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. |
Title  |
Picosecond hot-electron energy relaxation in NbN superconducting photodetectors |
Type |
Journal Article |
| Year |
2000 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
76 |
Issue |
19 |
Pages |
2752-2754 |
| Keywords |
NbN HEB detectors, two-temperature model, IF bandwidth |
| Abstract |
We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect. |
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0003-6951 |
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no |
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856 |
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Danerud, M.; Winkler, D.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.; Lindgren, M. |
| Title |
Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films |
Type |
Conference Article |
| Year |
1993 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
2104 |
Issue |
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Pages |
183-184 |
| Keywords |
YBCO HTS HEB detectors |
| Abstract |
Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W. |
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Spie |
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Editor |
Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
| Notes |
https://inis.iaea.org/search/searchsinglerecord.aspx?recordsFor=SingleRecord&RN=25034664 |
Approved |
no |
| Call Number |
10.1117/12.2298489 |
Serial |
1653 |
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| Author |
Karasik, B.S.; Lindgren, M.; Zorin, M.A.; Danerud, M.; Winkler, D.; Trifonov, V.V.; Gol’tsman, G.N.; Gershenzon, E.M. |
| Title |
Picosecond detection and broadband mixing of near-infrared radiation by YBaCuO films |
Type |
Conference Article |
| Year |
1994 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
2159 |
Issue |
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Pages |
68-76 |
| Keywords |
YBCO HTS HEB mixer |
| Abstract |
Nonequilibrium picosecond and bolometric responses of YBCO films 500 angstroms thick patterned into 20 X 20 micrometers 2 size structure to 17 ps laser pulses and modulated radiation of GaAs and CO2 lasers have been studied. The modulation frequencies up to 10 GHz for GaAs laser and up to 1 GHz for CO2 were attained. The use of small radiation power (1 – 10 mW/cm2 for cw radiation and 10 – 100 nJ/cm2 for pulse radiation) in combination with high sensitive read-out system made possible to avoid any non-linear transient processes caused by an overheating of sample above a critical temperature or S-N switching enhanced by an intense radiation. Responses due to the change of kinetic inductance were believed to be negligible. The only signals observed were caused by a small change of the film resistance either in the resistive state created by a bias current or in the normal state. The data obtained by means of pulse and modulation techniques are in agreement. The responsivity about 1 V/W was measured at 1 GHz modulation frequency both for 0.85 micrometers and 10.6 micrometers wavelengths. The sensitivity of high-Tc fast wideband infrared detector is discussed. |
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Spie |
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Nahum, M.; Villegier, J.-C. |
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High-Temperature Superconducting Detectors: Bolometric and Nonbolometric |
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no |
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Serial |
1640 |
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| Author |
Korneev, A.; Semenov, A.; Vodolazov, D.; Gol’tsman, G. N.; Sobolewski, R. |
| Title |
Physics and operation of superconducting single-photon devices |
Type |
Book Chapter |
| Year |
2017 |
Publication |
Superconductors at the Nanoscale |
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Issue |
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Pages |
279-308 |
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| Publisher |
De Gruyter |
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Editor |
Wördenweber, R.; Moshchalkov, V.; Bending, S.; Tafuri, F. |
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no |
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1326 |
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Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G. |
| Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation |
Type |
Abstract |
| Year |
2014 |
Publication |
Proc. 25th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 25th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
71 |
| Keywords |
carbon nanotubes, CNT |
| Abstract |
This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented. |
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1361 |
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